2N206 Search Results

2n2407

Abstract: 2N3907 transistor 2N3907 2N3908 2N4651 INTEX 2N2910 2N3680 2N2453 Programmable unijunction
Contextual Info: IN T E X / SE M IT R Ô N IC S CORP 27E D discrete devices GG002flL> 3 semitron hot line 7^ 7 -• ¿7 37 TOLL FREE NUMBER 800-777-3960 multiple devices dual transistors A Vb e -1— Vb E.2 Breakdown Voltate: (volts) T)fH VcB VCE Veb Min. Max. 2N2060 2N2060A

2N2919

Abstract: 2N2642
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 JEt 7 DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920

2N2223

Abstract: 2N2060 2n2223 transistor 2N2223A 2N2480
Contextual Info: MOTOROLA SC -CXSTRS/R 6367254 ~TL> F> MOTOROLA SC XSTRS/R 96D F Collector-Emitter Voltage 2N2060 Symbol 2N2223.A VCEO 60 Collector-Emitter Voltage VCER 80 Collector-Base Voltage VCBO 100 Emitter-Base Voltage VEBO 7.0 Collector Current — Continuous PD Total Device Dissipation

2N2060M

Contextual Info: Datasheet 2N2060M w g h C h C i i Semiconductor Corp. NPN SILICON DUAL TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JED EC TO-78 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2060M is a silicon NPN dual transistor utilizing two individual chips mounted

MP2145

Abstract: AD149 AD148 2s812 2N2068-0 2N1437 OC26 germanium 2N256 m945
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C •5 · 10 >= MP2145 2N2145 2N2145A 2N618 2N268A 2N20680 2N3161 MP2141 2N2141 2N2141A ~1~~~ 20 MP2146 2N2146 2N2146A 2N1761 2N3157 2N2660 2N2663 2N2666 · ~~~~~2 15 · 25 30 2N1758 2N1362 2N1363 2N1762 ADl63

MP2143

Abstract: AD162 2S8474 ad139 2N352 2N353 2N669 2N554 2N2282 2n555
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 >= NKT302A 2S8463 2S8474 PTC194 2N352 2N352 2N353 2N353 2N296 SK3052 ~~~~~A 15 20 2N256 NKT453 2N555 2N157 2N157A CK315 CK415 MN28 ~~f:16 25 30 NKT452 2N554 NKT415 NKT451 2N589 2N2061 2N2062 2N2063 ~~~~64

Contextual Info: 2N2060+JANS Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0n @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)50m

transistor data

Abstract: npn transistor data CHIP transistor 348
Contextual Info: 2N2060 Silicon NPN Transistor Data Sheet Description Applications Semicoa Corporation offers: • Matched, Dual Transistors • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N2060J • JANTX level (2N2060JX)

Transistor 78 L 05

Abstract: 2N2919 130L 2N2903 2N2916
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 / 24 DEVICE TYPE ^CEO sus VOLTS Ic (max) AMPS hpE @ Ic/ ^CE min/max @ mA/V ^CE(sat) @ I q/I b V @ mA/mA /t (MHz) 2N2060 60 0.5 30/90@0.1/5 1.2@50/5 P 15 2N2223 60 0.5 25/150@0.1/5

2n2060

Abstract: 2n2223 2N2060 MOTOROLA
Contextual Info: MOTOROLA SC X S T RS / R F 15E D | b3b?SS4 0Gflb23fl fl | MAXIMUM RATINGS Sym bol 2N206Q 2N2223.A Collector-Em itter Voltag e V cEO 60 C ollector-E m itter V olta g e V cER 80 C o llector-Base V oltag e VCBO 100 75 80 Vdc Vebo 7.0 5.0 5.0 Vdc Rating Em itter-Base V olta g e

2M222

Abstract: 2n2223 2N2223A
Contextual Info: TYPES 2N2060, t W l i n . . 2M2223A DUAL N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L - S 721 1678, M A R C H 1972 TW O T R A N S IS T O R S IN O N E P A C K A G E F O R D IF F E R E N T IA L A M P L IF IE R A P P L IC A T IO N S • Medium Power •

*2N2920* LCC

Abstract: 2N2920* LCC 2N2222AUB 2N2907AUB 2N2906AUB
Contextual Info: SURFACE MOUNT CATALOGUE SURFACE MOUNT DEVICES CERAMIC LCC MIL-PRF-19500 QUALIFIED DEVICES SMALL SIGNAL - NPN * SMALL SIGNAL - PNP * 2N2221AUA 2N2222AUA 2N2221AUB 2N2222AUB 2N3700UB 2N2906AUB 2N2907AUB DUAL PACK TRANSISTORS* 2N2060U 2N4854U 2N5793U 2N5794U

transistor k450

Contextual Info: , L/ne. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N2063A Transistor, Bipolar, CE PNP Power Military/High-Rel : N V(BR)CEO (V) : 20 V(BR)CBO (V) : 40 i MAX. n U-.87S -J I(C) M a x . (A) : 5.0

N2219

Abstract: 2N2453 2N2243 Hirel 2N1991 2N1937 2N2060 2N2102 2N2192 2N2192A
Contextual Info: 37E D SEtlELAB l t d 6133167 0000013 0 ISMLB 7=27- 0 / T-Jl-Ol Type No. Reliability Polarity Option Package V^e o ic cont hFE@ VCE/*C *T Pd 2N1937 2N1991 2N2060 2N2102 .2N2192 HI-REL SCREEN HI-REL HI-REL HI-REL NPN PNP PNP NPN NPN T063 T039 T077 T039 T039

AD166

Abstract: AD262 AD263 2N256 2N4241 2N2066 2N1202 2n2148 2N2U germanium
Contextual Info: POWER GERMANIUM PNP Item Number Part Number • 10 >= 20 AD262 2N663 2N1245 2N1246 OC25 AD263 AD263 2N1971 I C 25 30 40 MP1534 2N378 2S8493 2S8493 2N2064A 2N1539A 2N3311 2N4241 2S8493W ~:;11~: 45 50 2N1544A 2N3314 MP1530 2N1529 2N1529A 2N3215 MP1535 2N1534

BC431

Abstract: LOW-POWER SILICON NPN BC445A bcw9 2NS222
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC141-S BFW24 BC637 BFS61 2N489S BFX34 C266 C26S 2N1890 2N871 ~~rt:~OS 1S 20 BC44S BC44S-18 BC44S-S 2SC69 MPS-AOS MPS-AOS MPS-AOS PMBTASS ~~:0~~55 -2S 30 2N2060A 2N2060B 2N2SS2 2N2SS2A 2N2980 2N2980 2N2980 BFX99

2N2060A

Contextual Info: SEME 2N2060A LAB MECHANICAL DATA Dimensions in mm inches DUAL AMPLIFIER TRANSISTOR 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. Small Signal Dual Transistor in a TO–77 Hermetic Package.

2N2937

Abstract: 2N2804
Contextual Info: DIFFERENTIAL AND DUAL AMPLIFIERS Electrical Characteristics @ 25°C One Side Maximum Ratings Type NPN A m bient PD V CE(Sat) @ l c / l B H F E @ *C v EB One Side mW Both Sides mW V CB V CE Volts Volts 2N2060 500 600 100 60 7 30/90 0.1 0.5 2N2060A 500 600

SEMICOA SEMICONDUCTORS

Abstract: 2N2060 2N2060J 2N2060JV 2N2060JX 2N2060 JAN npn transistor data MIL-STD-750 2072
Contextual Info: 2N2060 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Matched, Dual Transistors • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2060J • JANTX level (2N2060JX)

2N2060DCSM

Contextual Info: 2N2060DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

2N3806

Abstract: 2N2453 2N3726 "low noise" npn 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2480
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH

2N2060M

Contextual Info: 2N2060M w w w. c e n t r a l s e m i . c o m SILICON DUAL NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2060M is a silicon dual NPN transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.

2N2060

Abstract: 2N2060L 2N206
Contextual Info: TECHNICAL DATA 2N2060 JAN, JTX, JTXV 2N2060L JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/270 UNITIZED DUAL NPN SILICON TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

Contextual Info: INTEX/ SEMITRÔNICS CORP 27E D discrete devices GG002flL> 3 semitron hot line 7^ 7 -• ¿7 37 TOLL FREE NUMBER 800-777-3960 multiple devices dual transistors A Vb e -1— Vb E.2 Breakdown Voltate: (volts) T)fH VcB VCE Veb 2N2060 2N2060A 2N20S0B 2N2223 2H2223A