2N2223 Search Results

TIC 2060

Abstract: TIC 2060 D 1/triac tic 2060
Contextual Info: TYPES ¡ w a e y 2N2223, 2N2223A DUAL N-P-N SILICON TRANSISTORS B U L L E T I N N O . O L - S 7 2 1 1 6 7 8 , M A R C H 197 2 TWO TRA N SISTO R S IN ONE PA CKA G E FOR D IF F E R E N T IA L A M P LIFIER APPLICATIO NS • Medium Power • High Operating Voltage

Q2T2905

Abstract: SN3351 3N208 q2t2222 TIS25 2N3808 2N3680 2N3809 2N381 T05 n3806
Contextual Info: Multi Transistors Dual Bipolar M ATCHIN G SELECT!roR HFE 20% HFE VBE VBE 5 mV RATINGS 10% 3 mV U N M ATCH ED 2N2641 2N2644 2N2913 2N2914 2N2223* 2N2640* 2N2643* 2N2917 2N2918 2N2972 2N2973 2N2976 2N2977 2N3349* 2N3352* 2N3806 2N3807 2N4854 2N4855 2N3348*

2N2919

Abstract: 2N2642
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 JEt 7 DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920

2N2223

Abstract: 2N2060 2n2223 transistor 2N2223A 2N2480
Contextual Info: MOTOROLA SC -CXSTRS/R 6367254 ~TL> F> MOTOROLA SC XSTRS/R 96D F Collector-Emitter Voltage 2N2060 Symbol 2N2223.A VCEO 60 Collector-Emitter Voltage VCER 80 Collector-Base Voltage VCBO 100 Emitter-Base Voltage VEBO 7.0 Collector Current — Continuous PD Total Device Dissipation

Transistor 78 L 05

Abstract: 2N2919 130L 2N2903 2N2916
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 / 24 DEVICE TYPE ^CEO sus VOLTS Ic (max) AMPS hpE @ Ic/ ^CE min/max @ mA/V ^CE(sat) @ I q/I b V @ mA/mA /t (MHz) 2N2060 60 0.5 30/90@0.1/5 1.2@50/5 P 15 2N2223 60 0.5 25/150@0.1/5

2n2060

Abstract: 2n2223 2N2060 MOTOROLA
Contextual Info: MOTOROLA SC X S T RS / R F 15E D | b3b?SS4 0Gflb23fl fl | MAXIMUM RATINGS Sym bol 2N206Q 2N2223.A Collector-Em itter Voltag e V cEO 60 C ollector-E m itter V olta g e V cER 80 C o llector-Base V oltag e VCBO 100 75 80 Vdc Vebo 7.0 5.0 5.0 Vdc Rating Em itter-Base V olta g e

Contextual Info: 2N2223AX MECHANICAL DATA Dimensions in mm inches DUAL NPN TRANSISTOR IN TO77 HERMETIC PACKAGE 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) FEATURES 12.7 (0.500) Min. 1.02 (0.040) Max. • Silicon Planar Epitaxial NPN Transistor

2n2223a

Contextual Info: 2N2223A Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Di. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N2223A Availability Online Store

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

Contextual Info: INTEX/ SEMITRÔNICS CORP 27E D discrete devices GG002flL> 3 semitron hot line 7^ 7 -• ¿7 37 TOLL FREE NUMBER 800-777-3960 multiple devices dual transistors A Vb e -1— Vb E.2 Breakdown Voltate: (volts) T)fH VcB VCE Veb 2N2060 2N2060A 2N20S0B 2N2223 2H2223A

Contextual Info: TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA silicon Transistor 2N2223 absolute maxfmum ratings: (25°C) (unless otherwise Voltages Collector to Base Collector to Emitter (R BE =10 ohnis) Collcuor to Emitter

Contextual Info: S EM E 2N2223A LA B MECHANICAL DATA Dimensions in mm inches DUAL NPN TRANSISTOR IN TO77 HERMETIC PACKAGE 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) FEATURES 12.7 (0.500) Min. 1.02 (0.040) Max. • Silicon Planar Epitaxial NPN Transistor

2N2223

Contextual Info: 2N2223 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N2223 Availability Online Store

2n2223a

Contextual Info: 2N2223 2N2223A SILICON DUAL NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2223 and 2N2223A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed

2N2947

Abstract: 2N4072 2N1335 2N2453 2N2951 2N1342 2N3729 2N2480 2N2480A 2N2639
Contextual Info: MG 8134693 SEMICOA DIFFERENTIAL AND DUAL AMPLIFIERS Cont’d Type NPN 2N3729 2N2453 2N2480 2M2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2913 2N2914 2N2915 2N2916 2N2917 2N2918 2N2453A 2N2919 2N2920 2N2652 2N2652A 2N2223 2N2223A 2N2060 60 60 75 80 45 45 45

Contextual Info: J. Cx , One. t/ TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N2223A MECHANICAL DATA Dimensions in mm (inches) DUAL NPN TRANSISTOR IN TO77 HERMETIC PACKAGE 9 5 1 (0,335) 940(0.370) 7 75 (0 305) 8.51 (0.335) FEATURES 1 02 (0 040)

2N2223A

Abstract: TO77 package
Contextual Info: SEME 2N2223A LAB MECHANICAL DATA Dimensions in mm inches DUAL NPN TRANSISTOR IN TO77 HERMETIC PACKAGE 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) FEATURES 12.7 (0.500) Min. 1.02 (0.040) Max. • Silicon Planar Epitaxial NPN Transistor

2N2223

Abstract: 2N2060 2N2060 MOTOROLA 2N2223A 2n2430 2N2060A 2N2480 2N2480A jan 2n2060 MD2218
Contextual Info: MOT OROL A SC -CXSTRS/R 6367254 DE I b 3 t i 7 5 5 4 F> MOTOROLA SC XSTRS/R 96D F Collector-Em itter Voltage 2N2060 Sym b o l 2N2223.A VCEO 2N2480 2N2480A U n it 60 40 40 Vdc VCER 80 — Collector-Base Voltage VCBO 100 75 80 Vdc Emitter-Base Voltage VEBO

Contextual Info: Dual Transistors TO-78 Case P q @ TA=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c (mA) VCBO VCEO (V) (V) h @«C (mA) MAX MIN MIN MIN MAX 2N2060 NPN AMPL/SWITCH 500 100 60 50 150 2N2060A NPN AMPLVSWITCH 500 100 60 50 150 2N2223 NPN AMPL7SWITCH

TO77 package

Abstract: 2N2223A "Dual npn Transistor"
Contextual Info: SEME 2N2223A LAB MECHANICAL DATA Dimensions in mm inches DUAL NPN TRANSISTOR IN TO77 HERMETIC PACKAGE 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) FEATURES 12.7 (0.500) Min. 1.02 (0.040) Max. • Silicon Planar Epitaxial NPN Transistor

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N2223

Abstract: 2N2060 Ferranti Semiconductors BS9300 "dual TRANSISTORs" 2N2223A C479 ZDT40 ZDT41 ZDT42
Contextual Info: SEMICONDUCTOR NETWORKS Ferranti semiconductor networks are arrays of interconnected or isolated semiconductor dice encapsulated in a single multilead package. In addition to a useful range of standard arrays, Ferranti offer a custom -build engineering service to

2n2407

Abstract: 2N3907 transistor 2N3907 2N3908 2N4651 INTEX 2N2910 2N3680 2N2453 Programmable unijunction
Contextual Info: IN T E X / SE M IT R Ô N IC S CORP 27E D discrete devices GG002flL> 3 semitron hot line 7^ 7 -• ¿7 37 TOLL FREE NUMBER 800-777-3960 multiple devices dual transistors A Vb e -1— Vb E.2 Breakdown Voltate: (volts) T)fH VcB VCE Veb Min. Max. 2N2060 2N2060A

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty