2N2060A Search Results

2n2407

Abstract: 2N3907 transistor 2N3907 2N3908 2N4651 INTEX 2N2910 2N3680 2N2453 Programmable unijunction
Contextual Info: IN T E X / SE M IT R Ô N IC S CORP 27E D discrete devices GG002flL> 3 semitron hot line 7^ 7 -• ¿7 37 TOLL FREE NUMBER 800-777-3960 multiple devices dual transistors A Vb e -1— Vb E.2 Breakdown Voltate: (volts) T)fH VcB VCE Veb Min. Max. 2N2060 2N2060A

2N2063A

Abstract: 2N2082 Emihus 2n2007 esr bc63 2N2019 2N2097A 2n2114 2n2079 2n2102 motorola
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC141-S BFW24 BC637 BFS61 2N489S BFX34 C266 C26S 2N1890 2N871 ~~rt:~OS 1S 20 BC44S BC44S-18 BC44S-S 2SC69 MPS-AOS MPS-AOS MPS-AOS PMBTASS ~~:0~~55 -2S 30 2N2060A 2N2060B 2N2SS2 2N2SS2A 2N2980 2N2980 2N2980 BFX99

BC431

Abstract: LOW-POWER SILICON NPN BC445A bcw9 2NS222
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC141-S BFW24 BC637 BFS61 2N489S BFX34 C266 C26S 2N1890 2N871 ~~rt:~OS 1S 20 BC44S BC44S-18 BC44S-S 2SC69 MPS-AOS MPS-AOS MPS-AOS PMBTASS ~~:0~~55 -2S 30 2N2060A 2N2060B 2N2SS2 2N2SS2A 2N2980 2N2980 2N2980 BFX99

2N2060A

Contextual Info: SEME 2N2060A LAB MECHANICAL DATA Dimensions in mm inches DUAL AMPLIFIER TRANSISTOR 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. Small Signal Dual Transistor in a TO–77 Hermetic Package.

2N2937

Abstract: 2N2804
Contextual Info: DIFFERENTIAL AND DUAL AMPLIFIERS Electrical Characteristics @ 25°C One Side Maximum Ratings Type NPN A m bient PD V CE(Sat) @ l c / l B H F E @ *C v EB One Side mW Both Sides mW V CB V CE Volts Volts 2N2060 500 600 100 60 7 30/90 0.1 0.5 2N2060A 500 600

Contextual Info: INTEX/ SEMITRÔNICS CORP 27E D discrete devices GG002flL> 3 semitron hot line 7^ 7 -• ¿7 37 TOLL FREE NUMBER 800-777-3960 multiple devices dual transistors A Vb e -1— Vb E.2 Breakdown Voltate: (volts) T)fH VcB VCE Veb 2N2060 2N2060A 2N20S0B 2N2223 2H2223A

2N2060ADCSM

Contextual Info: 2N2060ADCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

Contextual Info: DUAL MATCHED NPN SILICON TRANSISTOR 2N2060 / 2N2060A • • • • Matched Dual NPN Transistors Low Power Hermetically Sealed TO-77 Metal Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCEO

2N2060

Abstract: 2N2060A LE17 DUAL TRANSISTORS IN TO77 PACKAGE
Contextual Info: DUAL MATCHED NPN SILICON TRANSISTOR 2N2060 / 2N2060A • • • • Matched Dual NPN Transistors Low Power Hermetically Sealed TO-77 Metal Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCEO

TO77 package

Abstract: Vceo 80V Ic 0.5A
Contextual Info: SEME 2N2060A LAB MECHANICAL DATA Dimensions in mm inches DUAL AMPLIFIER TRANSISTOR 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. Small Signal Dual Transistor in a TO–77 Hermetic Package.

Contextual Info: Dual Transistors TO-78 Case P q @ TA=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c (mA) VCBO VCEO (V) (V) h @«C (mA) MAX MIN MIN MIN MAX 2N2060 NPN AMPL/SWITCH 500 100 60 50 150 2N2060A NPN AMPLVSWITCH 500 100 60 50 150 2N2223 NPN AMPL7SWITCH

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N2090

Abstract: 2N2095A 2N2022 2N2040 Emihus 2N2020 2n2063 2n2038 2N2082 2N2003
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 Solitron PPC Product PPC Product Solitron Solitron PPC Product Sid St Dvcs Sid St Dvcs Sid St Dvcs Sid St Dvcs g~:~:g~ ~:~~: ~~: KSP1151 KSP1171 SOT7A07 SOT7A07 SOT7A07 SOT7607 SOT7607 SOn607

2N2223

Abstract: 2N2060 2n2223 transistor 2N2223A 2N2480
Contextual Info: MOTOROLA SC -CXSTRS/R 6367254 ~TL> F> MOTOROLA SC XSTRS/R 96D F Collector-Emitter Voltage 2N2060 Symbol 2N2223.A VCEO 60 Collector-Emitter Voltage VCER 80 Collector-Base Voltage VCBO 100 Emitter-Base Voltage VEBO 7.0 Collector Current — Continuous PD Total Device Dissipation

axial zener diodes marking code c3v6

Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Contextual Info: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

2N2464

Abstract: 2N2240 2N2655 TO206AA 2C6090 2N2538 2N2201 2N2203 2N1945 2N2453
Contextual Info: STI Type: 2N1945 Notes: Polarity: NPN Power Dissipation: 600m Tj: VCBO: VCEO: 30 hFE min: hFE max: hFE A: VCE: VCE A: hfe: fT: Case Style: TO-205AD/TO-39: Industry Type: 2N1945 STI Type: 2N1958A Notes: Polarity: NPN Power Dissipation: 600m Tj: VCBO: VCEO: 40

MD8002

Abstract: 2n2903
Contextual Info: Dual Transistors TO-78 Case P q @ T ^=2 5°C =6 0 0m W Total Both Die Equal Power TYPE NO. DESCRIPTION «C v CBO v CEO (mA) (V) (V) hl=E IC ® V CE (mA) (V) VCE(SV T ) ® ' C <V) ' MAX (mA) ' % (MHz) MATCHING Hf e V BE *TYP MIN % <">V) MIN MAX NPN AMPL/SWITCH

2n2060

Abstract: 2n2223 2N2060 MOTOROLA
Contextual Info: MOTOROLA SC X S T RS / R F 15E D | b3b?SS4 0Gflb23fl fl | MAXIMUM RATINGS Sym bol 2N206Q 2N2223.A Collector-Em itter Voltag e V cEO 60 C ollector-E m itter V olta g e V cER 80 C o llector-Base V oltag e VCBO 100 75 80 Vdc Vebo 7.0 5.0 5.0 Vdc Rating Em itter-Base V olta g e

2N2936

Abstract: 2N2414 2N2453 2N2805 2N2806 2N2937 2N2803 DUAL TRANSISTORS IN TO77 PACKAGE PNP TO77 package 2n2804
Contextual Info: Transistors Discrete Devices Differential and D u al Am plifiers Type Polarity One Side mW Tracking Electrical Characteristics @ 25° C One Side Maximum Ratings Ambient Po hfe Both VC B VCE V e B Sides Volts Volts Volts mW Min/Max VcE(Sat) @ Ic/lß ic

DAC89EX

Abstract: BB-3500 OP01CP AD540JH bb3500 AD308H mA747PC 6502 microprocessor REF05 cookbook for ic 555
Contextual Info: PM 11984DATA B O O K The P M I C o m m itm e n t P M I is c o m m itte d to b u ild in g lo n g te rm c u s to m e r re la tio n s h ip s resulting in m u tu a l g ro w th . At PM I w e d e d ic a t e ourselves to le a d e rs h ip in c u s to m e r service,

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

2N3806

Abstract: 2N2453 2N3726 "low noise" npn 2N2060 2N2060A 2N2223 2N2223A 2N2453A 2N2480
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH