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    2N2305 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2305 API Electronics Short form transistor data Short Form PDF
    2N2305 API Electronics Transistor Selection Guide Scan PDF
    2N2305 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2305 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2305 Unknown GE Transistor Specifications Scan PDF
    2N2305 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2305 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2305 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N2305 Unknown Vintage Transistor Datasheets Scan PDF
    2N2305 Pirgo Electronics Power Transistors in TO-3 Scan PDF
    2N2305 Semiconductor Technology Medium and High Power Silicon Transistors Scan PDF
    2N2305 Semitronics Silicon Power Transistors Scan PDF
    2N2305 Silicon Transistor Industrial Grade NPN Power Transistors Scan PDF
    2N2305 Solid Power POWER TRANSISTORS - TO-3 Scan PDF
    2N2305 Solid Power Power Transistors, TO-3 Scan PDF
    2N2305 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF

    2N2305 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3236

    Abstract: 2N3864 2N1070 2N1488 2N2305 2N3667 2N3771 2N4347 2N5559
    Text: industrial power transistors 136 -~-~~~-~~-~~~~-~ SILICON NPN TRANSISTORS 15 Amp TYPE NUM8ER CASE SIZE 2N1069 2N1070 2N,1487 2N1488 2N1489 2N1490 2N1702 2N2305 2N3226 2N3232 2N3233 2N3234 2N3235 2N3236 2N3442 2N3863 2N3864 2N4347 2N4395 2N4396 2N5559


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    PDF 2N1069 2N1070 2N1488 2N1489 2N1490 2N1702 2N2305 2N3226 2N3232 2N3233 2N3236 2N3864 2N3667 2N3771 2N4347 2N5559

    2N1069

    Abstract: 2N3233 2N3236 2N3226 2N3442 2N1070 2N3232 2N3863 2n4395
    Text: industrial power transistors 136 -~-~~~-~~-~~~~-~ SILICON NPN TRANSISTORS 15 Amp TYPE NUM8ER CASE SIZE 2N1069 2N1070 2N,1487 2N1488 2N1489 2N1490 2N1702 2N2305 2N3226 2N3232 2N3233 2N3234 2N3235 2N3236 2N3442 2N3863 2N3864 2N4347 2N4395 2N4396 2N5559


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    PDF 2N1069 2N1070 2N1488 2N1489 2N1490 2N1702 2N2305 2N3226 2N3232 2N3233 2N3236 2N3442 2N3863 2n4395

    2N2305

    Abstract: No abstract text available
    Text: 2N2305 Si NPN Power BJT 8.90 Transistors Bipolar Silicon NPN Power. 1 of 1 Home Part Number: 2N2305 Online Store 2N2305 Diodes Si NPN Po w er BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


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    PDF 2N2305 com/2n2305 2N2305

    Untitled

    Abstract: No abstract text available
    Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s


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    PDF 2N2305

    3SM diode

    Abstract: 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306
    Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31


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    PDF MPS5858 BFR50 TIPP31B ST4341 BSW65 2N1572 2N738 2N2517 2N755 3SM diode 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306

    BD291

    Abstract: 2SC3883 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max r hFE fT 'CBO Max Max Mln (Hz) (A) (8) on ON) 100 100 100 100 100 100 50 50 50 50 50 100 50 218 218 30 30 75 75 75 75 75 75 75 75 80 60 60 70 80 22 22 22 22 22


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    PDF DTS802 DTS804 STI802 STI804 2SC3658 2SC3883 2SD1455 2SD1911 BD291 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035

    2n2224

    Abstract: 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 -60 65 - 70 EN914 2N708 2N914A 2N914A 2N914A 40219 40219 40221 40221 BSY19 BSY19 BSY19 2N3605A 2N3606A 2S95A 2S95A 2N1708A 2N321 0 BF165 2SC321H 2N2319 2N4264 2N2272


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    PDF EN914 2N708 2N914A BSY19 2N3605A 2N3606A 2n2224 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245

    Untitled

    Abstract: No abstract text available
    Text: 0043592 A P I A P I ELECTRONICS INC 26C 00227 ELECTRONICS INC 2b D «7*^ 1 D eT| □□43512 0000SS7 1 | COLLECTOR CURRENT = 5 AMPS PNP TYPES - CONTINUED Device No AP1043 AP1044 AP1045 AP1046 AP1056 AP1057 AP1058. AP1059 AP1088 AP1102 AP1103 AP1121 AP1135


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    PDF 0000SS7 AP1043 AP1044 AP1045 AP1046 AP1056 AP1057 AP1058. AP1059 AP1088

    2N1069

    Abstract: 2N3233 2N3235 2N3236 2N3238 2N3239 2N1070 2N230 2N3232 2N3240
    Text: POWER TRANSISTORS 'n , -•i ‘ 7 TYPE NO. f’T I t • 2N1069 50 w ., : •• r, , Sat ■ ■-c J . . j v » > V '‘ .-.so« , . v :i! \ Test Corrliîions In A A ll! 10 50 1.5 4 3 4.5 1.5 .3 .100 10 50 1.5 4 1 4.5 1.5 .3 .100 6 15 45 1.5 4 3


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    PDF 2N1069 2N1070 2N1487 2N1488 2N1489 2N1490 2N1702 2N2305 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N1070 2N230 2N3240

    2N3865

    Abstract: 2N3233 2N1069 2N3239 2N3238 2N3236 2N3235 2N3232 2n3713 2N1488
    Text: 8365700 SOLID POWER CORP ‘SOLID POWER CORP 95C 0 0099 0 TDF|fi 3bS 7DD DOOODÌT b f TS POWER TRANSISTORS TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS B V c b o BV ceo BV ebo Ic V V V A V Sat Test Voltages Conditions VcE V be Ic Ib V V A A @ hFE MIN MAX Ic A


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    PDF A3tiS700 2N1069 2N1070 2N1487 2N1488 2N1489 2N1490 2N1702 2N2305 2N3232 2N3865 2N3233 2N3239 2N3238 2N3236 2N3235 2n3713

    2N2753

    Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
    Text: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068


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    PDF 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N2753 S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110

    Untitled

    Abstract: No abstract text available
    Text: POWER TRANSISTORS PT TYPE NO. @ M A X IM U M RATINGS 25°C Ev/ra M v r a i m j m le Watts V V V A @ hFE M IN MAX le A Vci V Sat Test Voltages Conditions V ce V be le Ib V V A A Iebo ma 2N1069 50 60 45 9 4 10 50 1.5 4 3 4.5 1.5 .3 •100 2N1070 50 60 45 9 4


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    PDF 2N1069 2N1070 2N1487 2N1488 2N1489 2N1490 2N4914 2N4915 DD00407 TWX-510-224-6582

    AP1141

    Abstract: AP1043 AP1044 AP1045 AP1046 AP1056 AP1057 AP1058 AP1059 AP1088
    Text: 0043592 A P I A P I ELECTRONICS INC 26C 00227 ELECTRONICS INC Et D *7*^ 1 DE | □ □M 3 S cia □□0GSS7 T | C O L L E C T O R C U R REN T = 5 AM PS P N P T Y PE S - CONTINUED VCBO V olts V CEO sus V olts VEBO V o lts hFE ic Ft MHz OjC CC AV Min Max VCE


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    PDF AP1043 AP1044 AP1045 AP1046 AP1056 O-111/1 AP1057 AP1058 AP1059 AP1141 AP1058 AP1088

    4233A

    Abstract: 535x 184 324 DIODE 2N5383 2N3055C
    Text: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8


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    PDF 533XCD01 534XCD02 535XCQ01 2N1063 2N107Û 4233A 535x 184 324 DIODE 2N5383 2N3055C

    2N3916

    Abstract: 2N2196 2N2197 2N3444 2N3053 NPN transistor 2N491B 2N1445 2N1480 2N1700 2N1715
    Text: 1 OSE D • fll3b4Sfl □QGQSM7 5 SEMICONDUCTOR TEC H N O LO G Y , INC. 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 _ FAX 407-P8fi-8914 T -o Z q -O I SILICON TRANSISTORS r M E D I U M A M D H IG H P O W E R _


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    PDF 0000S47 2N497A 2N498A 2N656 2N656A 2N657A 2N1445 2N1480 2N1700 2N1715 2N3916 2N2196 2N2197 2N3444 2N3053 NPN transistor 2N491B

    Transistors 2n551

    Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
    Text: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts


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    PDF 2N339 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A Transistors 2n551 Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444

    AP1088

    Abstract: 2N3879 AP1058 AP1141 AP1043 AP1044 AP1045 AP1046 AP1056 AP1057
    Text: 0043592 A P I A P I ELECTRONICS INC 26C 00227 ELECTRONICS INC Et D *7*^ 1 DE | □ □M 3 S cia □□0GSS7 T | C O L L E C T O R C U R REN T = 5 AM PS P N P T Y PE S - CONTINUED VCBO V olts V CEO sus V olts VEBO V o lts hFE ic Ft MHz OjC CC AV Min Max VCE


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    PDF AP1043 AP1044 AP1045 AP1046 AP1056 O-111/1 AP1057 AP1058 AP1059 AP1088 2N3879 AP1058 AP1141

    1n52408

    Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
    Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which


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    PDF 301PT1115 302PT1115 303PT1115 311PT1110 312PTI110 319PTI110 327PTI110 351PT1115 353PT1115 1n52408 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    PDF

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    PDF

    2N2222A mps

    Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
    Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71


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    PDF 1N34A 1N55AB 1N100 1N102 1N103 1N104 1N107 1N108 1N111/ 1N117 2N2222A mps 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    IN733A

    Abstract: 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167
    Text: 666-001 N r lN N C ^ n 'O N N O V T ic v lO O O 'n'O 'O O 'O O O^t VTi^VTiO 0 r | 0 4 '4 ' 0 \0 ' 0 0 0 0 0 00 0 0 0 CN-NArHCMO 0 0 O 00 o cn-nacm cmcm < m< m cacacananananaooco o n o h h h cMH4 , 'A n N r < 4 - nano cn-no cmcacmcmcmcmcmcmcm canono oo ono cacano


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    PDF 2N582 2N5828 2N5828A 2N5829 2N5830 2N5831 2N5832 2N5833 2N6000 2N6004 IN733A 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167