BFR50 Search Results

SOT173

Abstract: BFG505 BFP505 BFR505 X3A-BFR505 crystal PHILIPS
Contextual Info: P h ilip s S em icon du ctors P rodu ct specification 1^3 1 - 9 0 NPN 9 GHz wideband transistor crystal PHILIPS SbE INTERNATIONAL » D ESCRIPTION X3A-BFR505 711002b I 0D4bl05 32^ • P H I N M E C H A N IC A L DATA NPN crystal used in BFR505 SOT23 , BFG505

2N1674

Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

philips 4859

Contextual Info: Philips Semiconductors bbS3T31 D05SB11 D1S • APX N AMER PHILIPS/DISCRETE Product specification b?E D NPN 9 GHz wideband transistor FEATURES c BFR505 PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: N30 • High transition frequency

Contextual Info: bb-53^31 DD3EE15 T^7 Hi APX Philips Sem iconductors Product specification NPN 9 GHz wideband transistor X3A-BFR505 crystal N A PIER PHILIPS/DISCRETE b^E » DESCRIPTION MECHANICAL DATA NPN crystal used in BFR505 SOT23 , BFG505 (SOT143) and BFP505 (SOT173). Crystals are supplied

"MARKING CODE N0"

Abstract: BFR505T MRC013 SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR505T NPN 9 GHz wideband transistor Product specification Supersedes data of 2000 Mar 14 2000 May 17 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR505T FEATURES DESCRIPTION • Low current consumption

bfr505

Abstract: MSB003 mra723 transistor ZO 103 MA
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR505 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR505 PINNING • High power gain

3SM diode

Abstract: 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

2N1893 motorola

Abstract: BSW32 2N1764 2N1742 BC447 MPSH04 2N1841 2N1956 2N1821 BSW39
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

MAR 745 TRANSISTOR

Abstract: BFR505T MRC013 SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR505T NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Feb 11 2000 Mar 14 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR505T FEATURES DESCRIPTION • Low current consumption

Contextual Info: SO T2 3 BFR505 NPN 9 GHz wideband transistor Rev. 4 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR505 is an NPN silicon planar epitaxial transistor, intended for applications in the RF front end in wideband applications in the GHz range, such as analog and digital

transistor bt 808

Abstract: d 5072 transistor bt 7377 2521a S51-P TRANSISTOR BD 689 transistor Bf 908 SOT23 752 philips 4859 Transistor MJE 5331
Contextual Info: • bbS3131 00B5211 D15 H A P X Philips Semiconductors N AMER Product specification PHILIPS/DISCRETE b ?E D NPN 9 GHz wideband transistor FEATURES BFR505 e PINNING • High power gain PIN • Low noise figure 2 DESCRIPTION 1 Code: N30 • High transition frequency

NXP Transistor standard marking

Contextual Info: SO T2 3 BFR505 NPN 9 GHz wideband transistor Rev. 4 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR505 is an NPN silicon planar epitaxial transistor, intended for applications in the RF front end in wideband applications in the GHz range, such as analog and digital

smd transistor jst

Abstract: BFG520 bfr505 BFG505 BFR50 BFR520 S221 Y parameters of transistors
Contextual Info: Philips Semiconductors 900 MHz low noise amplifier demoboard Appl,cation report 9 00 MHz LOW NOISE AMPLIFIER DEMOBOARD Summary: The p erformance of wideband transistors, BFG505 BFG520, BFR505, BFR520 is demonstrated in a 900 MHz Low N oise A m p l i f i e r in the frontend of a subscriber handset, (i.e.

BFG520

Abstract: BFQ67 Philips RF PREAMP cordless phone circuit BFG591 blt81 BFR93AW BFR93A sot103 phone circuit
Contextual Info: RF/Microwave Devices RF Wideband Transistors RF Wideband Transistors for Pagers RF amp see Fig. 1 SOT323 SOT23 SOT143 BFR92AW BFS25A BFS505 BFS520 BFR92A BFT25A BFR505 BFR520 BFG92A/X BFG25A/X BFG505/X BFG520/X MIX see RF amp O SC see RF amp ante nna \ /

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D173 BFR505T NPN 9 GHz wideband transistor Product specification Supersedes data of 2000 Mar 14 2000 May 17 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR505T FEATURES DESCRIPTION • Low current consumption

bfr505

Abstract: mra723
Contextual Info: BFR505 NPN 9 GHz wideband transistor Rev. 03 — 20 July 2004 Product data sheet 1. Product profile 1.1 General description The BFR505 is an NPN silicon planar epitaxial transistor, intended for applications in the RF front end in wideband applications in the GHz range, such as analog and digital

BFR505

Abstract: MSB003
Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR505 PINNING FEATURES • High pow er gain PIN DESCRIPTION • Low noise figure Code: N30 • High transition frequency 1 base • Gold m etallization ensures excellent reliability.

BSW65

Abstract: ST4341 2N2243AL BSW32 2N2364 LOW-POWER SILICON NPN 2N2891 BCX31 BSW39 2n738
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

BFR505T

Abstract: MRC013 SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR505T NPN 9 GHz wideband transistor Product specification Supersedes data of 2000 Mar 14 2000 May 17 NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR505T FEATURES DESCRIPTION • Low current consumption

SOT173

Abstract: BFG505 BFP505 BFR505 X3A-BFR505
Contextual Info: IAPX bb53T31 DD3SS1S W P h ilip s S e m icon d u ctors P ro d u ct sp ecificatio n NPN 9 GHz wideband transistor X3A-BFR505 crystal — -^ 1^— N A M ER P H I L I P S / D I S C R E T E hlE ]> D ESCRIPTIO N M E C H A N IC A L DATA N PN crystal used in BFR505 SOT23 , BFG505

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR505T NPN 9 GHz wideband transistor Preliminary specification 1999 Oct 18 Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor BFR505T PINNING FEATURES • Low current consumption PIN DESCRIPTION

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

LPC2148 i2c

Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Contextual Info: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.