2N3386 Search Results

e175 Siliconix

Abstract: E175 fet MMBFJ174 2N5475 u301 siliconix InterFET u301 2N5114 motorola 55T175 2N5798 InterFET
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) g.a Min (S) Max VGS(off) Max (V) IGSS Max (A) C'sa Max (F) PD Max (W) Derate at (WrC) Toper Max (DC) Package Style P-Channel JFETs, (Co nt' d) 5 10 - 15 20 2N3386 5MPJ271 TMPFJ271 E175

Contextual Info: » [D yj ïr ©ättä[l®( LO W P O W E R FIELD EFFECT T R A N S IS T O R S • el [ F i n n Type Number Case Style ( T O - ) Geometry BVgss Min (V) Ciss Max (pF) Vgs (off) Min Max (V) Igss or •Idgo Max (nA) Idss Min Max (mA) 2N3382 2N3384 2N3386 2N3993

2N3384

Abstract: 2N3386 2N3382 VCR3P
Contextual Info: designed fo r . Performance Curves PE See Section 5 Analog Switches Choppers Commutators A m plifiers 2N3384 BEN EFITS • Low Insertion Loss R DS on < 150 n (2N 3386) 2N3386 • ■ ■ ■ S Siliconix 2N3382 p-channel JFETs TO -72 See Section 7 ‘ AB SO LUTE M A X IM U M R A TIN G S (25°C )

Contextual Info: 2N3386 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3386 Availability Online Store

Contextual Info: 2N3386 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A)100m I(G) Max. (A)50m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)15n @V(GS) (V) (Test Condition)30 V(GS)off Min. (V) I(DSS) Max. (A)

2N3384

Abstract: 2N5114 2N5116 J174 equivalent J176 2N3382 2N3386 2N3993 2N3993A 2N3994
Contextual Info: Case BVgss Ciss Type Style Geometry Min Max Number TO (V) (pF) 2N3382 2N3384 2N3386 2N3993 2N3993A 2N3994 2N3994A 2N5018 2N5019 2N5114 2N5115 2N5116 J174 J175 J176 J177 U304 U305 U306 UC401 UC451 UC807 72 72 72 72 72 72 72 18 18 18 18 18 92 92 92 92 18 18

U305

Contextual Info: LOW P O W ER FIELD EFFEC T T R A N S IS T O R S Case Style T O - Geometry Type Number BVgss Min (V) Ciss Max (PF) Vgs (off) Min Max (V) Igss or •Idgo Max (nA) Idss Min Max (mA) 2N3382 2N3384 2N3386 2N3993 2N3993A 72 72 72 72 72 FP5.3 FP7.3 FP5.3 FP7.3

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N4303

Abstract: sd215 siliconix 2n4416 jfet JFET u1898 cross 2N4381 2N4393 JFET 2N3330 2n4267 2N4302
Contextual Info: si6halFET Product Specifications 7-io N & P-Channel Single JFETs Siliconix N N N P P P 8.0 6.0 11.5 6.5 3.2 5.0 5.0 9.5. 20 20 40 40 40 30 30 30 _ - _ _ _ _ _ _ _ 45 45 - _ _ - _ 0.9 2.0 0.2 0.44 1.0 2.0 5.0 1.0 2.0 0.5 0.1 3.0 I5.0 15.0 _ 25 75 150 _ 90 60

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

AN73-1 fet

Abstract: jfet AN73 VCR2N equivalent 2N3384 Siliconix Application Note 2N3382 2N3386 vcr2n AN73-1 VCR3P
Contextual Info: VCR7N VCR5P VCR4N VCR3P voltage-control led resistor FETs designed for . . . nt •Small Signal Attenuators ■ Filters ■Am plifier Gain Control ■Oscillator Amplitude Control o S itò B o n i x rfo rm a n c e PC PE C u rv e s S e e TO-18 Set Section 7

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

IN5314

Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)

2NB906

Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style

C MOS 4000

Abstract: 2N4393 S0212 2N6658 Siliconix JFET 3n146 P1087 2N4302 CROSS REFERENCE 2n6661 3N157
Contextual Info: si6halFET Product Specifications 7-io N 72 72 18 18 18 72 72 72 10 10 5.0 5.0 5.0 15 15 15 S ilic o n ix _ _ - 30 30 30 30 20 20 8.0 6.0 11.5 6.5 3.2 5.0 5.0 9.5. 20 20 40 40 40 30 30 30 0.9 2.0 0.2 0.44 1.0 2.0 5.0 1.0 2.0 0.5 0.1 3.0 I5.0 15.0 _ _ _ _ _

j201 jfet

Abstract: 2N4303 J201 Replacement fet cross reference FET J202 2N4381 2N3966 2N3909 J-FET 2N4393
Contextual Info: Iì ì ì F E T P r o d u c t p e c i f i c GENERAL GEOMETRY Section 4 a t i o n s ( C o n f d ) Product Specifications DEVICE S lUT s ì g PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z

J201 Replacement

Abstract: fet cross reference 2N3B19 j201 Cross Reference 2n4381 JFET 2N4302 CROSS REFERENCE 2n6661 2N4393 fet 2N4304
Contextual Info: Iì ì ì F E T P r o d u c t p e c i f i c GENERAL GEOMETRY Section 4 a t i o n s ( C o n f d ) Product Specifications DEVICE S lUT s ì g PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

TIS69 equivalent

Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
Contextual Info: IN T R O D U C T IO N This booklet is designed to simplify your selection of field effect transistors, which best meet your requirement. It is a comprehensive pocket size reference to your widest choice of field effect transistors. This broad selection is your best assurance of pin-pomting the

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the