INTERFET Search Results

B1112

Abstract: ADC10HT 1-6H005 BIT111 BN10
Contextual Info: 1-6H005 12-Bit AID Converter 8-94 ITAC HYBRID TECHNOLOGY InterFET Features f-_ _-oBipolar Offset Parallel Digital Output :!!!:C1 }j "i f-oRef In L l1J iii!! 5:! B 12-81t SUccessive Approximation Register SAR Ref Out Input ""'''.I\/'-O L.-o JRange Select

2SK105 Datasheet

Abstract: 2SK105 2SK59 to-226aa 2sk105 jfet 2SK40 TO226AA 2SK17 2SK113 2d201
Contextual Info: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions

2sk152 equivalent

Abstract: 2SJ44 2SK113 2SK152
Contextual Info: _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Process Unit Limit V M in Parameters

2SK105

Abstract: 2SK59 SGD 2SK40 2SK40 SGD 2SK17 2SK105 E interfet 2SK59 2SK17 SGD IFN105
Contextual Info: E2 9-97 Jagranes^guivalenUF^n^ges SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFN105 Process NJ16 NJ16 NJ16 NJ16 Unit Limit N N N N Channel Channel Channel Channel V M in -2 0 -5 0 -3 0 -5 0 nA Max

Contextual Info: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c|u ivalen ^ F ^ n h £|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit

2SK105

Abstract: 2SK105 F aX 010 2SK105 E 2sk40 2sk59
Contextual Info: 9-97 E2 Ja g a n e s ^ tju iv a le rv U F F T ^ g e ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFN105 Process NJ16 NJ16 NJ16 NJ16 N N N N Channel Channel Channel Channel -2 0

Application Papers

Contextual Info: Databook.fxp 1/13/99 2:10 PM Page H-13 H-13 01/99 Titles of Device Application Papers Abstracts and complete text available from InterFET upon request JFET for Completely Depleted High Resistivity Silicon V. Radeka, P. Rehak, S. Rescia Brookhaven National

2sk152 equivalent

Abstract: IFN152 INTERFET 2SK152 2SJ44 IFP44 2SK113 10 V jfet databook 2SK363
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P

Contextual Info: E2 9-97 Japanese Equivalent JFET Types_ SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFNI 05 Process NJ16 NJ16 N J16 NJ16 Unit Limit N N N N Channel Channel Channel Channel -2 0

2SK105 DGS

Abstract: 2SK105 V6010 2sj44
Contextual Info: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions

2SK146

Abstract: 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2SK147 2sk152 equivalent Japanese Transistor
Contextual Info: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions

2SK146

Abstract: 2SK147 equivalent 2sk146 datasheet 2sk146 equivalent 2SK147 IFN152 IFN146 2SK113 IFP44 2SJ44
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P

NPD5564

Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Contextual Info: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership

Application Notes

Abstract: matched pair JFET N CHANNEL jfet Low Noise Audio Amplifier jfet transistor for VCR "voltage controlled resistor" JFET APPLICATIONS igfet jfet differential transistor jfet p channel switch FET differential amplifier circuit
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page H-2 H-2 01/99 Junction Field Effect Transistors InterFET Application Notes Introduction T he field effect transistor was actually conceived before the more familiar bipolar transistor. Due to limited technology and later the

j174 transistor

Contextual Info: B 52 9-97 J 1 7 4 , J 1 75 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • CHOPPERS • COMMUTATORS • AN ALO G SWITCHES Absolute maximum ratings at T* = 2 5'C Reverse Gate Source & Reverse Gate Drain Voltage - 30 V Continuous Forward Gate Current

Contextual Info: B 47 9 -9 7 IFN5911, IFN5912 N-CHANNEL DUAL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25eC icicpe * u « n r a . » n m .-n -n r.n -. . . Continuous Forward Gate Current Continuous Device Power Dissipation • WIDEBAND DIFFERENTIAL AMPLIFIERS

Contextual Info: B 33 9 -9 7 IF1801 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN AM PLIFIER Absolute maximum ratings = TA at 25‘ C Reverse Gate Source Voltage & Gate Drain Voltage - 20 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation

Contextual Info: B 48 9 -9 7 IFN6449, IFN6450 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR HIGH VOLTAGE Absolute maximum ratings at T* = 25°C IFN6449 Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation

2N3994

Contextual Info: B8 9 -9 7 2N3994, 2N3994A P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • CHOPPERS • HIGH SPEED COMMUTATORS Absolute maximum ratings at Ta = 25°C Reverse Gate Source Voltage Reverse Gate Drain Voltage 25 V 25 V Continuous Forward Gate Current Continuous Device Power DIssipation

S0014

Contextual Info: inter f e t corp t,SE D • Mfl2bôflfl OO O O b O S 074 ■ IF C C 5 IF210 6 N-CHANNEL SILICON ENHANCEMENT MODE VERTICAL DMOS FET Absolute maximum ratings at TA = 25°C Drain Source Voltage Continuous Drain Current Gate Source Voltage Maximum Power Dissipation

Contextual Info: F4 9-97 Small O utline Surface M ount Package Devices N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS BVgsS Device Type >GSS VgS(OFF) Limits Conditions Min Max Vos to Min Max @Vds (mA) (mA) (V) Min @Ig Max @VGS (V) (UA) (nA) (V) SMP 4340 SMP4341 SMP 4391

2N5396

Abstract: 2n5397
Contextual Info: 9-97 B 20 2N5397, 2N5398 N -C H A N N E L S IL IC O N J U N C T IO N FIELD-EFFECT T R A N SIST O R LOW NOISE HIGH POWER GAIN HIGH TRANSCONDUCTANCE MIXERS OSCILLATORS VHF AMPLIFIERS Absolute maximum ratings at T* * 25"C Reverse Gate Source & Reverse Gate Drain Voltage

Contextual Info: D6 9 -9 7 J553, J554, J555, J556, J557 CURRENT REGULATOR DIODE • CURRENT REGULATION • CURRENT LIMITING • BIASING Absolute maximum ratings at TA = 25'C. Peak Operating Voltage Continuous Reverse Gate Current Continuous Device Power Dissipation 50 V 50 mA

Contextual Info: 9 -9 7 D 2 DPAD1, DPAD2, PPAD5, DPAD10 DUAL PICO-AMP DIODE • H IGH IMPEDANCE PROTECTION CIRCUITS Absolute maximum ratings at TA = 25‘ C Continuous Forward Gate Current 50 mA Storage Temperature Range DPAD1 At 25°C free air temperature: Min Electrical Characteristics