2N37 Search Results

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

fr 3707 z

Abstract: fr 3709 z fr 3709 2N3711 2N3707 a5t3707 2n3711 TY A5T3711
Contextual Info: TYPES 2N3707 THRU 2N3711, A5T3707 THRU A5T3711, A8T3707 THRU A8T3711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 5 , M A R C H 1973 S I L E C T t T R A N S IS T O R S Ï • Ideal for Low-Level Amplifier Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil

2N5451

Abstract: 2n5449
Contextual Info: TYPES 2N5449, 2N5450, 2N5451 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 9 , M A R C H 1 9 7 3 SILECTt TRANSISTORS* • For Medium-Power Amplifiers, Class B Audio Outputs, Hi-Fi Drivers • Also Available in TO-92 Versions . . . 2N3704 thru 2N3706

JANTXV2N3749

Abstract: LM 3041
Contextual Info: P O W F P T R A N Ç R T O P Ç r ; / îw rî !?« Ja n , j a n t x , & j a n t x v 2N2880 JAN- JANTX, & JANTXV 2N3749 5 Amp, 80V, Planar, NPN FEATURES • Meets MIL-S-19500/315 • Collector-Base Voltage: 110V • Fast Switching: tr t, = 300nSec max • Low Saturation Voltage: 0.25V max @ 1A

Power Transistor 2N3771

Abstract: 2N3771 2N3771 power transistor 2N3771 inchange
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3771 DESCRIPTION •Excellent Safe Operating Area ·High DC Current Gain-hFE=15 Min @IC = 15A ·Low Saturation Voltage: VCE(sat)= 2.0V(Max)@ IC = 15A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and

TEXAS 2N3771

Abstract: 2h37 STR 5012 lc 5012 m
Contextual Info: TYPES 2N3771, 2N3772 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR UNTUNED POWER-AMPLIFIER APPLICATIONS ¡5 3 m V> H K> 150 W at 25°C Case Temperature 30-A Rated Continuous Collector Current 2N3771 20-A Rated Continuous Collector Current (2N3772)

2N3019

Abstract: JAN2N3700 2N3019S 2N3019S JAN
Contextual Info: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit

2N3773

Abstract: npn 855 2N6609
Contextual Info: Product Specification www.jmnic.com 2N3773 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6609 ・High DC current gain ・Low saturation voltage ・High safe operating area APPLICATIONS ・Designed for high power audio, disk head

2N3797

Abstract: 2N3797 MOTOROLA 2N3796 2N3796 MOTOROLA 2N3798
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b 3fc,7a5M ODfibtilO 5 | f 2N3796 2N3797 CASE 22-03, STYLE 2 TO-18 TO-206AA MAXIMUM RATINGS Value Symbol Rating Drain-Source Voltage 2N3796 2N3797 Gate-Source Voltage Unit Vdc V os 25 20 VGS ±10 Vdc 1 Source Drain Current >D

2N3772

Abstract: 2N3772G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N3772 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS „ DESCRIPTION The UTC 2N3772 is a silicon power transistor in TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N3773 POWER TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS  DESCRIPTION The UTC 2N3773 are complement silicon power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching

2N3792

Abstract: 2N3791 2N3715 2N3716
Contextual Info: SavantIC Semiconductor Product Specification 2N3791 2N3792 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N3715 ,2N3716 ·Excellent safe operating area APPLICATIONS Designed for medium-speed switching and amplifier applications

2N3716

Contextual Info: SavantIC Semiconductor Product Specification 2N3716 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package APPLICATIONS ·They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline TO-3 and symbol

Contextual Info: mÎ æ J E L E C T R O N I C S , IN C. / -11 COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No 2N3751 Case TO1 1 1 /1 TO- 2N3752 2N3850 TO- 2N3851 2N3852 VcBO VCEO bus Volts Volts 80 60 V e BO Volts ’E Min hi Max 8 100 300 VCE 5 Vb e (sat) 1

2N3702

Abstract: 2N3703
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package 2N3702 2N3703 PNP SILICON PLANAR EPITAXIAL TRANSISTORS B EC DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 5 DEG 1,14 1,14 12,70 1.982 MAX

Contextual Info: Sb TOSHIBA { D I S C R E T E / O P T 03- 9097250 T O S H IB A de 1 t q t 7 e s o ODoaoaa D I SC R ET E/O P T O SILICON PNP TRIPLE DIFFUSED TYPE T - ä 3 - 3 3 2N3790 _ POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR Unit in mm APPLICATIONS. (ZÍ8 5 0 MAX.

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

Contextual Info: m 2N3715 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3715 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 MAXIMUM RATINGS lc 10 A Ib 4.0 A MAX. BOTH e n d O m < 60 V P diss 150 W @ T C = 25 °C Tj -65 °C to +200 °C

2N373

Abstract: 2n3735
Contextual Info: 2N3735 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3735J

TO206AA

Abstract: hFE-100 2N3700
Contextual Info: 2N3700 Silicon Transistors - NPN/PNP Medium Power General Purpose Page 1 of 1 Silicon Transistors - NPN/PNP Medium Power General Purpose Contact Factory for complete specification. STI Type 2N3700 VCBO 140 hFE 100 IC A 150m Industry Type 2N3700 Notes *BVCEO

BCY72 MOTOROLA

Abstract: 2N4405 N4026 BC178 BC179 transistor 2N4033 2N2906 2N2906A N3963 2N3799
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N 3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200

2N3740

Contextual Info: 2N3740 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a

2N3767

Abstract: 2N3767 JANTX
Contextual Info: 2N3767 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a