2N387 Search Results

Contextual Info: DIGITRON SEMICONDUCTORS 2N3870-2N3873 2N3896-2N3899 2N6171-2N6174 SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING TRIODE THYRISTOR 35 AMPS RMS, 100-800 VOLTS Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

k 3878

Abstract: 2N3879 2N650A 2n5202 2N3879A
Contextual Info: P o w e r Tran sistors File Num ber 766 2N3878, 2N3879, 2N5202, 2N6500 HARRIS SEMICOND SECTOR 27E D • 4302E71 OOnflBl 0 * H A S ~ r - 3 3 - i / High-Speed, Epitaxial-Collector Silicon N-P-N Planar Transistors F o r H ig h -S p e e d S w itc h in g and L in e a r-A m p lifie r A p p lic a tio n s

2N1724A

Abstract: TO61 2N3442 2N1724 2N1725 2N3773 2N3878 2N3879 2N3446 2N5326
Contextual Info: _1 4 E u M M e l e c t r o n ic s , in c . COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No Case 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 T O -66 TO111/1 TO111/1 TO111/1 TO111/1 2N5346 2N5348 2N5349 v CBO Volts V c E O sus Volts vebo Volts hFE Min Max VCE

2N6881

Abstract: CA37P GE C228 C137PB 2N682 2N683 C35F C35U C38F C38U
Contextual Info: - C230-2 C231-3 - C228-9 C35 C 38 - C137 2N 681-92* - _ 2N3870-3 2N 3896-9 - - - 2N5204-7 - 100-600 M 600 25-700 2b 500 35 22.5 •' B ° C 35 20 @ 73 C 35 22.3 @ 35° C 35 22.5 & 70 C 35 22.3 @ 40° C 150 150 300 GE TYPE JEDIEC E LEC TR IC A L SPECIFICATIONS

2N3907

Contextual Info: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028

Contextual Info: 2N3876 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)140 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)30m÷ @V(CBO) (V) (Test Condition)139 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)10

2N3879

Abstract: MIL-PRF-19500/526 2N3879 JANTXV
Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/526 Devices Qualified Level 2N3879 JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation

2n3878

Abstract: TA7285 2N3879 2N5202
Contextual Info: File N u m b e r 2N3878, 2N3879, 2N5202 766.1 High-Speed, Epitaxial-Collector Silicon N-P-N Planar Transistors For H ig h -S p ee d S w itchin g and L in ea r-A m p lifie r A p p licatio n s Features: • ■ ■ M a x im u m -a re a -o f-o p e ra tio n c u rv e s l o r d c a n d p u ls e o p e r a tio n

Contextual Info: 2N387 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)80º V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)13 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)0.7 @I(C) (A) (Test Condition)1.0

Contextual Info: 2N3879+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)75 V(BR)CBO (V)120 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)25m÷ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)4.0

Contextual Info: 2N3879+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)75 V(BR)CBO (V)120 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)25m÷ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)4.0

2N3492

Abstract: 2N5388 2N5389 TO61 2N3487 2N3488 2N3489 2N3490 2N3491 2N3879
Contextual Info: Device Type 2N3879 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N5387 2N5388 2N5389 2N5427 2N5428 2N5429 2N5430 2N6077 2N6078 2N6079 VCEO V 75 60 80 100 60 80 100 200 250 300 80 80 100 100 275 250 350 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/80 4.0

ta8932

Abstract: 2N3879 TA7285 P602I 2N5202 2N3878 2N6500 2N3679 RCA Solid State Power Transistor PT3535
Contextual Info: "üï »F|3fl7SGfll D0171QS 7 01E 17105 171Q_ _01E D High-Speed Power l 1u ° u 7^_ L— 3875081 G E SOLID STATE 2N3878, 2N3879, 2N5202, 2N6500 File N u m b e r

2N3879

Contextual Info: SavantIC Semiconductor Product Specification 2N3879 Silicon NPN Power Transistors DESCRIPTION With TO-66 package •Wide area of safe operation ·High sustaining voltage · APPLICATIONS ·For high-speed switching and linearamplifier applications PINNING See Fig.2

transistors 1U

Abstract: 2N3879 2N3878
Contextual Info: 01 » E ^ 3 f l ? S D a i 0017105 " 0 1 E 171Q5 _ 0 1E 1 7 11u0 5 High-Speed Power Transistors-— D 3875081 G E SOLID 7 STATE 2N3878, 2N3879, 2N5202, 2N6500 D u Tz. L — U File Number

2n3879

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3879 • High Power • Hermetic TO-66 Metal Package • Ideally suited for High Current, High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

typ1012

Abstract: M6697 S1015L aeg t15 BC141-10 aeg
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number SeRs, VDRM 5 10 SIPSll0 SPSll0 10RIF10W 10RIF10Wl0 10RIF10W15 10RIF10W20 S4060A NCF100D 2N1844 2N1844A ~t-1Ut:ll;i 15 20 25 30 SF10B41 SF10B41 2N3870 2N3896 2N6171 2N6171 2N6171 16RIA10 TIC126A 1Il;126A

TO-213AA

Abstract: 2N3879 2N3879 JANTX TO213AA
Contextual Info: 2N3879 NPN POWER SILICON TRANSISTOR IN A HERMETICALLY SEALED METAL PACKAGE MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. 11.94 (0.470) 12.70 (0.500) 2 FEATURES 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590)

2N3899

Abstract: 2N3896 2N6173 2N3872 2N3898 2N3870 2N3871 2N3873 2N3897 2N6171
Contextual Info: MOTOROLA SC -CDIODE S/ OP TO ï 6367255 MOTOROLA SC 01 Ï F tiBbVaSS <DI O D E S /O P T O ) 0 1E 7 8 9 4 6 OOTfiTHb 1 DT ~ 2 * r - /7 2N3870 S ilic o n C o n tr o lle d R e c tifie rs thru 2N3873 2N3896 R e v e rse B lo c k in g T rio d e T h y ris to rs

2N3919c

Abstract: 2N3445
Contextual Info: COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No C ase 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 TO-66 TO 1 U /I TO111/1 TO lii A TO111/1 2N5346 2N5348 2N5349 VCBO Volts V cEO «“ s Volts VEBO Volts Min Max VCE ic Vc e (sat) Vb e (sat) 1b •QjC "C/W ft

2n3879

Abstract: 2n5202 101075A 2N3679 P602I TA7285 rdf1
Contextual Info: File Number 766.1 2N3878, 2N3879, 2N5202 HARRIS S E m C O N D SECTOR ShE D M302E71 QQMDMMl 147 • HAS ■ High-Speed, Epitaxial-Collector Silicon N-P-N Planar Transistors For High-Speed Switching and Linear-Amplifier Applications Features: ■ M axim um -area-of-operatlon curves fo r d c and pulse operation

Contextual Info: 2N3879+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)75 V(BR)CBO (V)120 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)25m÷ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)4.0

RCA1A19

Abstract: rca 40362 40362 RCA 40319 40391 RCA RCA1A08 2n4314 RCA1A02 2N6496 RCA rca 2N4314
Contextual Info: High-Speed-Switching n-p-n and p-n-p Type Selection Charts cont'd "FE v C E O (sus) V C E X V (sus) V 'C mA V V (sat)-V •CEO-MA CE V CE Temp.—°C ^CE 'c 25 V mA 2N3879 FAMILY (n-p-n) High Cu f = 60MHzmin;P = 35W T 0-213MA Package T 85* 75* 65+ 90* 110*

Contextual Info: 2N3879 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a