2N5153 Search Results

2N5153U3

Abstract: 2N5153 JANS 2N5153 2N5153 JANTXV 2N5151 2N5151L 2N5153L IC 545 305
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS 2N5151 2N5151L 2N5151U3 2N5153 2N5153L

B205A

Abstract: 2n5152 2N5151 2N5154
Contextual Info: Datasheet central Vi ^ W l • — ■ 2N5151 2N5152 2N5153 2N5154 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS W *m Spwiirnwili iftfli1corn. 9^9■■ llvWI IUVvbwl WB pva 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824

2SB5950

Abstract: B0540C to-53 2SB595-0 B0242c 2N3186 2N3198
Contextual Info: POWER SILICON PNP Item Number Part Number I C} 5 -10 20 2SB1270 2SB9200 2SA1293 2N5005 2N5153 2N5153S 2N5609 2N5617 See Index NthAmerSemi Semelab SGS-Ates NthAmerSemi NEC Corp JA See Index Matsushita Matsushita Matsushita ~emel~ ToshibaCorp Sanyo Elect Sanyo Elect

Contextual Info: 2N5151SMD05 2N5153SMD05 MECHANICAL DATA Dimensions in mm inches PNP BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 )

Contextual Info: 2N5151-220M 2N5153-220M MECHANICAL DATA Dimensions in mm inches 0.70 0.90 3.56 Dia. 3.81 10.41 10.92 13.39 13.64 16.38 16.89 HIGH SPEED MEDIUM VOLTAGE SWITCHES 4.70 5.00 10.41 10.67 DESCRIPTION 1 2 3 12.70 19.05 The 2N5151-220M and the 2N5153-220M are silicon expitaxial planar PNP transistors in

2N5154

Contextual Info: 2N5154 SILICON NPN TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N5154 is a silicon epitaxial planar NPN transistors in Jedec TO-39 metal case intended for use in switching applications. The complementary PNP type is the 2N5153. TO-39 INTERNAL SCHEMATIC DIAGRAM

Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet − production data Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 2 3 1 TO-257 TO-39 2 1 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics

Contextual Info: 2N5151 2N5153 MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCHES 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) DESCRIPTION 0.41 (0.016) 0.53 (0.021) dia. The 2N5151 and the 2N5153 are silicon

2N5153 JANS

Abstract: 2n5153
Contextual Info: PNP Power Silicon Transistor 2N5151, 2N5151L & 2N5153, 2N5153L Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/545 • TO-5 Package: 2N5151L, 2N5153L TO-39 TO-205AD Package: 2N5151, 2N5153 Maximum Ratings (TC = +25°C unless otherwise noted)

Contextual Info: 2N5153+JANS Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N5153L Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • High-speed power switching • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5153LJ • JANTX level (2N5153LJX)

Tl 5153

Abstract: 2N5003
Contextual Info: TYPES 2N5003. 2N 5005, 2N5151, 2N5153 P-N-P SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY ] 1 H mC < < r 2 «m W For Complementary Use With 2N5002, 2N5004, 2N5152, 2N5154 s p 15 mJ Reverse Energy Rating with I q = 10 A and 4 V Reverse Bias

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr D a t a S h e e t No. 2 N 5 1 5 3 o% #f 1 l $ I c I ^88888 id L SEMICONDUCTORS Type 2N5153 G eneric Part Num ber: 2N5153 Geometry 9702 Polarity PNP Qual Level: JA N -JA N S

2N2880

Abstract: 2N5004 2N3055S 2N5672 TO111 2N2658 2N2814 2N3599 2N3741 2N3749
Contextual Info: Device Type 2N2658 2N2658 2N2814 2N2880 2N2880 2M2880 2N3055S 2N3599 2N3741 2N3749 2N5004 2N5005 2N5038 2N5074 2N5153 2N5539 2N5672 2N6307 SDT3229 SDT55907 SDT55907 Control Drawing 5203/02505B 5203/02506B 5203/031B 5203/02503B 5203/02501B 5203/02502B 5203/00301B

2N5153S

Contextual Info: 2N5153S Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)

2N5153

Abstract: semicoa 2N5153 2N5153 JANS
Contextual Info: Data Sheet No. 2N5153 Generic Part Number: 2N5153 Type 2N5153 Geometry 9702 Polarity PNP Qual Level: JAN - JANS REF: MIL-PRF-19500/545 Features: • • • • Silicon power transistor for use in high speed switching applications. Housed in a TO-39 case.

2N5153

Abstract: 2N5153J 2N5153JS 2N5153JV 2N5153JX
Contextual Info: 2N5153 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed power switching • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5153J • JANTX level (2N5153JX)

Contextual Info: 2N5151 2N5153 MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCHES 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) DESCRIPTION 0.41 (0.016) 0.53 (0.021) dia. The 2N5151 and the 2N5153 are silicon

BUX98PI

Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
Contextual Info: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490

Contextual Info: 2N5153+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N5153+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N5672 solitron

Abstract: TU105-B01 2N5004 SDT55907 2N3658 TU201 TU108-B01 TU206-B01
Contextual Info: SOLITRON DEVICES INC K ¿eÆ liÊron _ r a Q i g H U ? © M M , ! Devices. Inc. DEVICE TYPE ito S P A C E FLIGHT PO W ER TRAIMSISTORS CONTROL DRAWING VCBO VOLTS VCEO VOLTS 2N5038 2N5074 2N5153 2N5539 2N5672 5203/009-01B 4203/022-01B

2N5153

Abstract: 2N5154 2N5151 PF203 2N5152
Contextual Info: 2N5151 2N5153 MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCHES 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. 5.08 (0.200) typ. 2.54

2N5153SMD

Contextual Info: 2N5153SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar PNP Device in a Hermetically sealed