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    Motorola Semiconductor Products 2N6307

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    Quest Components 2N6307 149
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    2N6307 6
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    WALBERN DEVICES INC. 2N6307

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    RCA 2N6307

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    GTCAP 2N6307

    TRANSISTOR,BJT,NPN,300V V(BR)CEO,8A I(C),TO-3
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    Quest Components 2N6307 160
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    2N6307 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6307 Central Semiconductor POWER TRANSISTORS TO-3 CASE Original PDF
    2N6307 Central Semiconductor NPN Silicon Transistor Original PDF
    2N6307 Micro Commercial Components TRANS GP BJT NPN 400V 10A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=300 / Ic=8 / Hfe=15-75 / fT(Hz)=5M / Pwr(W)=125 Original PDF
    2N6307 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=300 / Ic=8 / Hfe=15-75 / fT(Hz)=5M / Pwr(W)=125 Original PDF
    2N6307 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6307 Diode Transistor Transistor Short Form Data Scan PDF
    2N6307 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6307 Motorola Switchmode Datasheet Scan PDF
    2N6307 Motorola The European Selection Data Book 1976 Scan PDF
    2N6307 Motorola European Master Selection Guide 1986 Scan PDF
    2N6307 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6307 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6307 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6307 Unknown Transistor Replacements Scan PDF
    2N6307 Unknown Transistor Replacements Scan PDF
    2N6307 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6307 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N6307 Unknown Transistor Replacements Scan PDF
    2N6307 Unknown Transistor Replacements Scan PDF
    2N6307 Unknown Transistor Replacements Scan PDF

    2N6307 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2880

    Abstract: 2N5004 2N3055S 2N5672 TO111 2N2658 2N2814 2N3599 2N3741 2N3749
    Text: Device Type 2N2658 2N2658 2N2814 2N2880 2N2880 2M2880 2N3055S 2N3599 2N3741 2N3749 2N5004 2N5005 2N5038 2N5074 2N5153 2N5539 2N5672 2N6307 SDT3229 SDT55907 SDT55907 Control Drawing 5203/02505B 5203/02506B 5203/031B 5203/02503B 5203/02501B 5203/02502B 5203/00301B


    Original     		PDF 2N2658 2N2814 2N2880 2M2880 2N3055S 2N3599 2N3741 2N3749 2N2880 2N5004 2N3055S 2N5672 TO111 2N2658 2N2814 2N3599 2N3741 2N3749

    2N6307

    Abstract: No abstract text available
    Text: 2N6307 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6307 O204AA) 31-Jul-02 2N6307

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2N6307   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • NPN Silicon High Voltage Transistors High current capability Fast switching speed


    Original     		PDF 2N6307 250Vdc, 300us,

    Untitled

    Abstract: No abstract text available
    Text: MCC 2N6307   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • NPN Silicon High Voltage Transistors High current capability Fast switching speed High power TO-3 package


    Original     		PDF 2N6307

    2N6307

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N6307 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers,


    Original     		PDF 2N6307 2N6307

    Untitled

    Abstract: No abstract text available
    Text: 2N6307 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6307 O204AA) 16-Jul-02

    2N6307

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2N6307 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers,


    Original     		PDF 2N6307 2N6307

    Untitled

    Abstract: No abstract text available
    Text: 2N6307 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6307 O204AA) 18-Jun-02

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2N6306

    Abstract: 2n6307 TO-204aa MICROSEMI PACKAGE OUTLINE 2N6308
    Text: 61 1 5 9 5 0 MICROSEMI CORP/POWER DB DE j b l l S i S O 02E~W£12 OODOms D a |~ 2N6306 2N6307 2N6308 TECHN O LO G Y Power Technology Components HIGH VOLTAGE NPN TRANSISTORS 8 AMPERES 700 VOLTS FEATURES APPLICATIONS • • • • • • • • • High Voltage Rating 700 Volts


    OCR Scan     		PDF 2N6306 2N6307 2N6308 2N6306, 2N6308 2N6306 TO-204aa MICROSEMI PACKAGE OUTLINE

    2N6307 Motorola

    Abstract: 2N6308 2N6306 2N6303 2n6308 motorola
    Text: MOTOROLA SC XSTRS/R F g . . - ï^ N _ - . - 12E D I k3k72S4 OOAIbeb 7 | MOTOROLA 7^ 33 -/3 2N6303 SEMICONDUCTOR TECHNICAL DATA 2N6306 2N6307, 2N6308 HIGH VOLTAGE NPN SILICON POWER TRANSISTORS 8 AMPERE POWER TRANSISTORS NPN SILICON . . . designed for high voltage inverters, switching regulators and lineoperated amplifier applications. Especially well suited for switching


    OCR Scan     		PDF k3k72S4 2N6303 2N6306 2N6307, 2N6308 2N6306 2N6307 2N6308 2N6306, 2N6307 Motorola 2N6303 2n6308 motorola

    2n6306

    Abstract: 2N6307 2N6308 npn high voltage transistor 500v 8a NPN Transistor 600V NPN Transistor 600V 2A World transistors and ic vbe 10v, vce 500v NPN Transistor 250V transistor npn 2a
    Text: Datasheet 2N6306 2N6307 2N6308 Central Sem iconductor Corp. NPN Silicon T r a n s i s t o r 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 Case Manufacturers of World Class Discrete Semiconductors DESCRIPTION


    OCR Scan     		PDF 2N6306 2N6307 2N6308 2N6306, 2N6307, 2N6308 npn high voltage transistor 500v 8a NPN Transistor 600V NPN Transistor 600V 2A World transistors and ic vbe 10v, vce 500v NPN Transistor 250V transistor npn 2a

    2N6306

    Abstract: 2N6307 2n6308 zn63 2N6307 Motorola
    Text: #% • im-_ -4 ^ iy ^ « M > - jw y g .'á MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA 2N6306 2N6307, 2N6308 HIGH VO LTAG E NPN SILICON POWER TRANSISTORS 8 AMPERE POWER TRANSISTORS NPN SILICON . . . designed for high voltage Inverters, switching regulators and lineoperated amplifier applications. Especially well suited for switching


    OCR Scan     		PDF 2N6306 2N6307, 2N6308 2NS306 2N6307 --2N6306, 2N6308 2N6306 2N6307 zn63 2N6307 Motorola

    DTS-425

    Abstract: 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 2N5936 2N5937
    Text: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce


    OCR Scan     		PDF Sfi4fl35E T-33-15 Tc-29Â 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 DTS-425 2N5936 2N5937

    IC 8030

    Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
    Text: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3


    OCR Scan     		PDF bSb4clc13 2N5933d 2N5934d 2N5935d 2N5936d 2N6677 2N6678 2N6686 2N6687 2N6688 IC 8030 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-3 Case Continued TYPE NO. •c (A) NPN PNP Pd (W) bvceo (V) (V) hFE 8 lc »TYP (A) VCE(SAT) @ic (V) (A) MAX h *TYP (MHZ) MIN MIN MIN MAX 10 125 110 100 20 100 5.0 3.5 10 4.0 2N6249 10 175 300 200 10 50 10 1.5 10 2.5 2N6250 10 175 375


    OCR Scan     		PDF 2N6249 2N6250 2N6251 2N6253 2N6254 2N6248 2N6282 2N6285 2N6547 2N6576

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


    OCR Scan     		PDF 5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487

    2NG307

    Abstract: 2N6306 ns802 2N6307 2N6308 unitrode 655
    Text: POWER TRANSISTORS S 8 Amp, 700V, Triple Diffused NPN Mesa 2N6308 FEATURES • Collector-Base Voltage: up to 700V • Peak Collector Current: 16A • Rise Time: ^ 600 n s • Fall Time: < 400 ns f @ ' c “ 3A D E S C R IP T IO N These high voltage triple diffused glass


    OCR Scan     		PDF 2N6306 2N6307 N6308 600nsl 2N6308 2NG307 ns802 2N6308 unitrode 655

    1431T

    Abstract: BU106 BUX18 2n2102 replacement 2N3440 2N5416 REPLACEMENT 2N6306 2N6307 2N6308 2N6510 BUX17
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .


    OCR Scan     		PDF lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 1431T BU106 BUX18 2n2102 replacement 2N3440 2N5416 REPLACEMENT 2N6306 2N6307 2N6308 2N6510 BUX17

    MJE3055F

    Abstract: SE9300 FT3055 2N3715 FAIRCHILD FT50 SE9303 2N3440 2N5683 2N5684 2N5685
    Text: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY lC max, POLARITY AND ASCENDING VCEO Item DEVICE NO. Polarity NPN PNP ic = 50.0 A Max v CEO V Max VCE(sat) @ ic V A Max hpE @ 'C A Min/Max (Cont d) it PD(Max) MHz Min(Typ) Tc= 25°C Package No. Continuous (Cont'd)


    OCR Scan     		PDF 2N5685 2N5683 2N5686 2N5684 2N3440 2N6387* 1K/20K O-220 MJE30S5F MJE3055F SE9300 FT3055 2N3715 FAIRCHILD FT50 SE9303 2N3440

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    2N6248

    Abstract: 2N6249 2N6250 2N6251 2N6253 2N6254 2N6282 2N6283 2N6284 2N6285
    Text: Power Transistors TO-3 Case Continued TYPIE NO. •c (A) NPN PNP Pd (W) MAX bvcbo bvceo @ hFE lC *TYP (V) (V) MIN MIN MIN MAX (A) V CE(SAT) @ ic (V) (A) MAX fT *TYP (MHZ) MIN 10 125 110 100 20 100 5.0 3.5 10 4.0 10 175 300 200 10 50 10 1.5 10 2.5 2N6250


    OCR Scan     		PDF 2N6248 2N6249 2N6250 2N6251 2N6253 2N6254 2N6282 2N6285 2N6283 2N6286 2N6249 2N6250 2N6251 2N6253 2N6254 2N6284