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    2N6216 Search Results

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    2N6216 Price and Stock

    Solitron Devices Inc 2N6216

    TRANSISTOR,BJT,NPN,150V V(BR)CEO,10A I(C),TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6216 8
    • 1 $49.8632
    • 10 $47.37
    • 100 $47.37
    • 1000 $47.37
    • 10000 $47.37
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    2N6216 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6216 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=150 / Ic=10 / Hfe=20-80 / fT(Hz)=20M / Pwr(W)=71 Original PDF
    2N6216 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6216 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6216 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6216 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6216 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6216 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6216 Silicon Transistor Low Frequency Silicon Power Transistor Scan PDF
    2N6216 Solitron Devices Planar Power Transistor Scan PDF

    2N6216 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N6216 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6216 O204AA) 18-Jun-02

    2N6216

    Abstract: 2N6217
    Text: Product Specification www.jmnic.com 2N6216 2N6217 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current ,high power dissipation APPLICATIONS ・For use in switching and linear power applications PINNING PIN DESCRIPTION 1 Base 2 Emitter


    Original     		PDF 2N6216 2N6217 2N6216 2N6217

    2N6217

    Abstract: 2N6216
    Text: SavantIC Semiconductor Product Specification 2N6216 2N6217 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current ,high power dissipation APPLICATIONS ·For use in switching and linear power applications PINNING PIN DESCRIPTION 1 Base


    Original     		PDF 2N6216 2N6217 2N6216 2N6217

    2N6217

    Abstract: 2N6216 MA8020
    Text: Inchange Semiconductor Product Specification 2N6216 2N6217 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current ,high power dissipation APPLICATIONS ・For use in switching and linear power applications PINNING PIN DESCRIPTION 1 Base


    Original     		PDF 2N6216 2N6217 2N6216 2N6217 MA8020

    all ic datasheet

    Abstract: 2N6216
    Text: 2N6216 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6216 O204AA) 31-Jul-02 all ic datasheet 2N6216

    SDT13305

    Abstract: SDT12302 SDT13303 SDT7603 SDT7732 2N2811 2N2812 2N2813 2N2814 2N4070
    Text: Device Type VCEO hFE V Min/Max @ IC (A) 2N2811 2N2812 2N2813 2N2814 2N4070 2N4071 2N4301 2N5006 2N5008 2N5218 2N5288 2N5289 2N5313 2N5315 2N5317 2N5319 2N5327 2N5540 2N5542 2N5622 2N5624 2N5626 2N5628 2N5730 2N5854 2N6128 2N6216 2N6217 2N6249 2N6250 2N6251


    Original     		PDF 2N2811 2N2812 2N2813 2N2814 2N4070 2N4071 2N4301 2N5006 2N5008 2N5218 SDT13305 SDT12302 SDT13303 SDT7603 SDT7732 2N2811 2N2812 2N2813 2N2814 2N4070

    Untitled

    Abstract: No abstract text available
    Text: 2N6216 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6216 O204AA) 16-Jul-02

    40G120

    Abstract: BU124 2SD745 BD141
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 >= 40 45 50 SML7611 SDT7806 SDT7806 2N1811 2N2111 SDT7206 SDT7206 SDT7910 SDT791 0 SDT791 0 BU124 BU124 BU124 BU124A BU124A DTL8753 2N6262 BUX17 BUX17 WXlT 55 60 65 70 75 80 85 90 SDT7736 SDT7736


    Original     		PDF O-218 O-218var O-247S O-218M O-218AA 40G120 BU124 2SD745 BD141

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original     		PDF IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


    Original     		PDF 2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


    Original     		PDF 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020

    semelab 2N6287

    Abstract: 2N6279 2N6235 2N6277 2N6226
    Text: SEMELAB LTD 37E D type No. Reliability Option 2N6216 2N6226 2N6227 2N6228 2N6229 SCREEN SCREEN SCREEN SCREEN SCREEN NPN PNP PNP PNP PNP 2N6230 2N6232 2N6233 2N6234 2N6235 SCREEN SCREEN HI-REL HI-REL HI-REL PNP NPN NPN NPN NPN 2N6246 2N6247 2N6248 2N6249 2N6250


    OCR Scan     		PDF 000002b 2N6216 2N6226 2N6227 2N6228 2N6229 2N6230 2N6232 2N6233 2N6234 semelab 2N6287 2N6279 2N6235 2N6277

    2NXXXX

    Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
    Text: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z


    OCR Scan     		PDF 2N6192 2N6193 2N6211 2N6212 2N6213 2N6214 2N6215 2N6216 2N6217 2N6226 2NXXXX SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2nxxx

    2N5286

    Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
    Text: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT


    OCR Scan     		PDF 2N2657 2N2658 2N2877 O-111 2N2878 2N2879 2N2880 2N5286 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562

    2N6220

    Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051
    Text: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079


    OCR Scan     		PDF 2N6033 2N6047 2N6049 2N6049E 2N6050 750-12k 2N6051 2N6052 2N6220 2N6256 2N6258 PNP 2N60

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2n6217

    Abstract: T7736
    Text: mtMujKgT atm,© _ _Jfolitran MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER Devices, me NPM EPITAXIAL PLANAR POWER TRANSISTOR FORMERLY 77 CONTACT METALLIZATION B a s e a n d emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "C h ro m e Nickel S ilv e r" a lso a v a ila b le )


    OCR Scan     		PDF 203mm) 200pF 200pF SDT7731 T7736, 2N6216, 2N6217 T7736

    2N6216

    Abstract: 2N6217 SDT7731 SDT7736 100V transistor npn 5a
    Text: „¿/outran [ P t M D M ? © Ä T T Ä IL MEDIUM TO HIGH VOLTAGE, FAST SWITCHING Devices. Inc. CHIP NUMBER NPIM EPITAXIAL PLANAR POWER TRANSISTOR (FORMERLY 77 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		PDF 203mm) T150V 12MHz 200pF SDT7731 SDT7736, 2N6216, 2N6217 2N6216 SDT7736 100V transistor npn 5a

    2N6216

    Abstract: No abstract text available
    Text: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC TS 95 D 02 8 5 7 »E "Jfl3 tia tiD s o D o a a s ? 7 [^ © yNgTr ©ÄTTM, © « M EDIUM TO HIGH VOLTAGE, FAST SWITCHING ÆsiÊroii Devices. Inc CHIP N U M BER N PN EPITAXIAL PLANAR POWER TRANSISTOR (FORMERLY 77


    OCR Scan     		PDF 203mm) ultrasonical200pF SDT7731 SDT7736, 2N6216, 2N6217 2N6216