2N5622 Search Results

2N5622

Contextual Info: 2N5622 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N5622

Contextual Info: 2N5622 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

5626

Abstract: 2N5622 2N5624 2N5626 2N5628
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5622 2N5624 2N5626 2N5628 DESCRIPTION •With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For audio and general-purpose applications

Contextual Info: 2N5622 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N5622

Abstract: 2N5626 2N5624 2N5628
Contextual Info: Inchange Semiconductor Product Specification 2N5622 2N5624 2N5626 2N5628 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For audio and general-purpose applications

2N5626

Abstract: 2N5622 2N5624 2N5628 5626
Contextual Info: Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5622 2N5624 2N5626 2N5628 DESCRIPTION ・With TO-3 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For audio and general-purpose applications

SDT13305

Abstract: SDT12302 SDT13303 SDT7603 SDT7732 2N2811 2N2812 2N2813 2N2814 2N4070
Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N2811 2N2812 2N2813 2N2814 2N4070 2N4071 2N4301 2N5006 2N5008 2N5218 2N5288 2N5289 2N5313 2N5315 2N5317 2N5319 2N5327 2N5540 2N5542 2N5622 2N5624 2N5626 2N5628 2N5730 2N5854 2N6128 2N6216 2N6217 2N6249 2N6250 2N6251

Contextual Info: Microsemi NPN Transistors Part Number NPN 2N3491 2N3489 2N3492 2N5854 2N7368 2N5622 2N5624 2N5626 2N5288 2N5289 2N5628 2N1724 2N6128 2N6S10 2N6511 2N6512 2N6514 2N6513 2N5241 2N6544 2N1902 2N1904 2N6S61 2N6S82 2N6584 2N6S85 2N6588 2N6580 2N6583 2N6586 2N6S89

LC51

Contextual Info: HI-REL SEUELAB SEMELABE BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N5602 2N5603 2N5604 2N5605 2N5606 2N5607 2N5608 2N5609 2N5610 2N5611 2N5612 2N5613 2N5614 2N5615 2N5616 2N5617 2N5618 2N5619 2N5620 2N5621 2N5622 2N5623 2N5629

2N4071

Abstract: 2N6277 JANTX 2N6277 2N4070
Contextual Info: A POWERHOUSE BIPOLAR Î 11 NPN PLANAR POWER T R A N S IS T O R S PACKAGE T0-204 TO-3 * ’A DEVICE TYPE PEAK ßVcEO 'c VOLTS AMPS VCE (sal) hFE min/max •C @ V CE A V max VOLTS c A @ 'b A 2N4070 100 10.0 40-120 5.0/5.0 0.6 5.0/0.5 2N4071 150 10.0 40-120

TO111

Abstract: TO61 U 114
Contextual Info: G27 ELECTRONICS, INC. \ -15 COLLECTOR CURRENT = 10 AM PS NPN TYPES— ConWnued C ue VCBO Volt 2N3920 2N4070 2N4071 2M 150 JAN 2N4150 JT X • ÎN4150 2N4301 2N4347 2N4348 2N5006 T O -3 T O -3 T O -3 T O -5 T O -5 120 120 200 100 100 60 100 150 80 80 6 8

BD607

Abstract: BDY17 sd1536-1 mj2940 motorola RCA1C07 bd608
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on fT tON r hFE ICBO (CE)set Toper Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) Max (°C) 275m 275m 275m 140 140 140 140 140 140 PD Package Style D vices 20 Watts or More, (Cont'd)

2N5385

Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388
Contextual Info: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

2n3920

Abstract: 2n8249
Contextual Info: 0043592 A P I A P I _ 2 6 C ELECTRONICS INC 2b ELECTRONICS INC n— — D eT | O D ^ S 1^ a< 0000230 T | COLLECTOR CURRENT = 10 AMPS NPN TYPES - CONTINUED Device No 2N3920 2N4070 2N4071 2N4150 JAN 2N4150 JTX * 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008

Contextual Info: I SPACE POWER ELECTRONICS ST DE~| A4403SS ••00106 1 | ^ * 3 3 - 0 / _ Hi-Rel PLANAR P O K E R - 1 0 AMP NPN FOR DETAILED SPECIFICATIONS CONTACT ENGINEERING Breakdown Voltages TYPE CASE V 2N4897 2N5002 2N5004 2N5006 2N5008 2N5048 2N5049 2N5148 2N5150 2N5152

2N5286

Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Contextual Info: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT

2N4071

Abstract: 2N6277 JANTX 2N6277
Contextual Info: BIPOLAR N PN PLA N A R POW ER T R A N S IS T O R S T0-204 TO-3 W & J; •c VOLTS AMPS hFE min/max < < o m PEAK bvceo o DEVICE TYPE PACKAGE VCE (sat) max VOLTS ■c A @ 'b A 2N4070 100 10.0 40-120 5.0/5.0 0.6 5.0/0.5 2N4071 150 10.0 40-120 5.0/5.0 0.6 5.0/0.5

2N3920

Abstract: 2N4070 2N4071 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048
Contextual Info: 0043592 A P I ELECTRONICS INC_ A P I ELECTRONICS INC 2^ 26f nn?*n n— DE | DDMBSTS 0000230 T | COLLECTOR CURRENT = 10 AMPS NPN TYPES - CONTINUED Device No 2N3920 2N4070 2N4071 2N4150 JAN 2N4150 JTX * 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

germanium transistor

Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types

Contextual Info: i l * ! E L E C T R O N I C S , IN C.\-15 COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No Case VCBO Volts 2N3920 2N4070 2N4071 2N4150 JAN 2N41S0 JT X * 2N4150 2N4301 2N4347 2N4348 2N5006 TO-3 TO-3 TO -3 TO-5 TO-5 120 120 200 100 100 60 100 150

SDT423

Abstract: SDT411 SDT425
Contextual Info: 33 SILICON POWER TRANSISTORS CURRIE MT G A IN TYPE NUM BER CASE TYPE V CBO V V EBO V CEO I V I V h M IN . I MAX. V CE V S A T U R A T IO VI V O LT A G E S <s> C I A V CE(s V BE(s) V I V 'c A 1 *B A 10 AMP SILICON NPN 2N5313 2N5315 2N5317 TO-61 TO-61 TO-61-I

2N3920

Abstract: 2N4070 2N4071 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048
Contextual Info: i l * ! E L E C T R O N I C S , IN C.\-15 COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No Case VCBO Volts 2N3920 2N4070 2N4071 2N4150 JAN 2N41S0 JT X * 2N4150 2N4301 2N4347 2N4348 2N5006 TO-3 TO-3 TO -3 TO-5 TO-5 120 120 200 100 100 60 100 150