2N6678 Search Results

2N6676

Abstract: 2N6677 2N6678
Contextual Info: Æ&m o s p e c NPN SILICON POWER TRANSISTORS NPN 2N6676 2N6677 2N6678 The 2N6676,2N6677and 2N6678 transistor are designed for high voltage switching applications such as: FEATURES ‘ Off-Line Power Supplies ‘ Converter Circuits *Pulse Width Modulated Regulators

BC140-16

Abstract: T053 BC109C NPN BC108A BC107A bc108 IC hr 2N6589 2N6590 2N6609 2N6653
Contextual Info: MAE D • 0133187 0 0 0 D M4 5 SEM ELABE G31 I S ML B SEMELAB LTD BI-POLAR TRANSISTO RS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N6589 2N6590 2N6594 2N6609 2N6653 2N6654 2N6655 2N6671 2N6672 2N6673 2N6674 2N6675 2N6676 2N6677 2N6678 2N6686 2N6687 2N6688

2N6678

Abstract: 2N6676 2N6691 2N6693
Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices 2N6676 Qualified Level 2N6678 2N6691 JAN JANTX JANTXV 2N6693 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage

Contextual Info: NPN High Power Silicon Transistors 2N6676 & 2N6678 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/538 • TO-3 TO-204AA Package Maximum Ratings Symbol 2N6676 2N6678 Units Collector - Emitter Voltage Ratings VCEO 300 400 Vdc Collector - Base Voltage

Contextual Info: ¡lU CROSEMl CORP/POüJER 02 I ^ F |t ,l l S ^ S O 0 0 0 0 4 5 0 b "J~ D T '3 3 - / . 5 2N6676 2N6677 2N6678 - .T ^ H N O C O G Y .;_V V ; Po we r Tec h nö ió gÿ Co m poh e nis HIGH VOLTAGE NPN TRANSISTORS 15 AMPERES : 400 VOLTS 30 <01 1 » 3 Ï3901 139961 MAX

Contextual Info: 2N6678+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N6678+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

power transistor 200V, 30A

Abstract: 2N6678 Rl135 2n6677
Contextual Info: 2N6676 2N6677 2N6678 NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6676 SERIES types are NPN Silicon Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER

2C3303

Abstract: ca3725 6676 transistor transistor C200 2N6676 2CS9
Contextual Info: File Number 2N6676, 2N6677, 2N6678 HARRIS SEMICOND SECTOR 1165.1 M 3 0 S 2 7 1 D D 4 0 b 20 EfiM • HAS SbE D T ’3 3 ~ / 9 15-A Sw ItehM aX Power Transistors TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications

RJH6676

Abstract: 2n6676
Contextual Info: Power Transistors. T~33~\3 2N6676, 2N6677, 2N6678, RJH6676, RJH6677, RJH6678 File Number HARRIS SEMICOND SECTOR 1 5 -A S w ite h ffla X 27E D • 1165 4302S71 QQSGObQ S BiHAS P o w e r T ra n s is to rs TERMINAL DESIGNATIONS H ig h -V o lta g e N -P -N T y p e s fo r O ff-L in e P o w e r S u p p lie s and

Contextual Info: 2N6678 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N6678 Availability Online Store

Contextual Info: 2N6678+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N6678

Contextual Info: SGS-THOMSON RülD@œi[LI BTIs! IS!lBCi 2N6678 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE APPLICATIONS . SWITCHING REGULATORS . INVERTERS . SOLENOID AND REU\Y DRIERS • MOTOR CONTROLS . DEFLECTION CIRCUITS 2 DESCRIPTIONS ■ High voltage, high speed switching power

NPN power transistor 15A amperes

Abstract: 135AI L50C1 EM2030 D64VS3 2N66 2N667 2N6676 2N6677 2N6678
Contextual Info: HIGH VOLTAQE/HIQH SPEED 2N6676.77.78 NPN POWER TRANSISTORS 300-400 VOLTS 15 AMP, 175 WATTS G E EQUIVALENT D64VS3,4, 5 The 2N6676, 2N6677 and 2N6678 series of NPN power transistors is designed for use in power switching applica­ tions requiring high-voltage capability, fast switching speeds

CA3725

Abstract: MJH6678 2N6678 transistor MJH6678 2N6350 2N6677 motorola 3-251 2N6678 motorola MJH6677 2N6648
Contextual Info: MOTOROLA SC 6367254 íXSTRS/R "Tb F> M O T OR O L A SC CXSTRS/R F DE Jt.Btz.7SSM O O ñ D S l b H 96D 6 0 5 1 6 D T-33-/3 2N6648 See Page 3-209 MOTOROLA SEMICONDUCTOR TECHNICAL DATA N P N S ilic o n P o w e r T ran sisto rs 2N6676 2N6677 2N6678 The 2N6676, 2N6677, 2N6678, MJH6676, MJH6677, and MJH6678 transistors are

npn C 1740

Contextual Info: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6678M3A • High Voltage, Fast Switching. • Hermetic TO-254AA Isolated Metal Package. • Ideally suited for PWM Regulators, Power Supplies and Converter Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

2N6676

Abstract: 40321 40361 2N6677 2N6678 2N6738 2N6739 2N6740 40406 2N6752
Contextual Info: 0258354 ADVANCED SEM ICONDUCTOR 1 fl2 TRANSISTORS Po @ Tc=25°C DEVICE TYPE NO. 2N6676 2N6677 2N6678 2N6738 2N6739 2N6740 2N6751 2N6752 2N6753 2N6754 2N6834 2N6835 2N6836 40080 40081 40084 40231 40232 40232 40234 40235 40236 40237 40238 40239 40240 40242 40243

aX 010

Abstract: 2N6693 JS 027
Contextual Info: ,lk 2N6676 2N6677 2N6678 2N6691 2N6692 2N6693 General 3 ^ Semiconductor ^ « Industries, Inc. HIGH POWER NPN twitch P/iff TRANSISTORS NPN 300, 350, 400V 15 A M P S W IT C H IN G t, — 300ns T Y P IC A L This rugged series o f NPN tra n s ito rs is designed fo r high speed s w itch in g

2N6678 motorola

Abstract: Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3
Contextual Info: "Tb MOTOROLA SC iXSTRS/R F> 6367254 M OT O R O L A SC CXSTRS/R F DE Jt.3t.72SM OOÛOSlt. 2 96D 60 516 D T-33-13 2IM6648 M O TO RO LA See Page S E M IC O N D U C T O R TECH N ICAL DATA 3-209 N P N Silico n Pow er T ransistors 2N6676 2N6677 2N6678 The 2N6676, 2N6677, 2N6678, MJH6676, MJH6677, and MJH6678 transistors are

Contextual Info: m 2N6678 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6678 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE T O - 3 INCHES 875 MAX. A MAXIMUM RATINGS B 135 MAX. .2 5 0- 043 DIA. C MILLIMETERS 22.23 MAX.

2N6678

Abstract: 2N6677 2N6676
Contextual Info: SavantIC Semiconductor Product Specification 2N6676 2N6677 2N6678 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS Designed for high voltage switching applications such as :

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE NPN TO-3 * Tc = 25°C ’ Typical 6 DEVICE TYPE 2N6032 2N6033 2N6274 2N6275 2N6276 2N6277 2N6322 2N6323 2N6326 2N6327 2N6338 2N6340 2N6341 2N6354 2N6510 2N6511 2N6512 2N6677 2N6678 2N6686 2N6687

2N6678

Abstract: transformerless inverter 2N6676 2N6677 DO820
Contextual Info: Series 2N6676, 2N6677, 2N6678 High Voltage NPN Transistors 15 Amperes • 400 Volts FEA TURES • High Voltage Rating— 400 Volts • Glass Passivation • Superior Resistance to Thermal Fatigue • Industrial and Military Applications APPLICATIONS • Switching Regulators

LM875

Abstract: TRANSISTOR L 043 A 2N6678
Contextual Info: 2N6678 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6678 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE TO- 3 INCHES A MAXIMUM RATINGS 15 A Ib 5.0 A < B le 400 V O m 875 MAX. 135 MAX. .2 5 0- 043 DIA.