2N6590 Search Results

BC140-16

Abstract: T053 BC109C NPN BC108A BC107A bc108 IC hr 2N6589 2N6590 2N6609 2N6653
Contextual Info: MAE D • 0133187 0 0 0 D M4 5 SEM ELABE G31 I S ML B SEMELAB LTD BI-POLAR TRANSISTO RS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N6589 2N6590 2N6594 2N6609 2N6653 2N6654 2N6655 2N6671 2N6672 2N6673 2N6674 2N6675 2N6676 2N6677 2N6678 2N6686 2N6687 2N6688

2N5048

Abstract: 2N4301 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388 2N5542 2N5959
Contextual Info: ^4 ^TRANSISTOR CO DE J a ñ M ñ 3 S E INC D D O O I E 11] S 84D 00129 D10DETRdf\l515T0R TO., INC. 201 686-0400 • Telex: 139-335 • Outside N Y & NJ area call T O LL FREE 600-526-4581 FAX No. 201-575-5863 NPNTO-61 Type# PHP Com ple­ ment VCEOfSUS) (Volte)

10J2

Abstract: 2N6563 3f05 sf 1012 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813
Contextual Info: NEW ENGLAND SEMICOND UCT OR INIPIM T O - 6 1 PNP Comple­ ment VCEO SUS (V) 0000053 [ See page 13 for isolated collector versions Case 805 Type No. S^E D VCE (SAT) @ IC/lB ( V @ A/A) VBE @ IC/VCE (V @ Art) VBE (SAT) @ IC/lB STÛ • NES I(max) = 5 to 2 0 A

Contextual Info: 0043592 A P I ELECTRONICS INC A P I 26C 00234 ELECTRONICS INC 2b D » F | d D4 3 S c12 D 00 0 2 3 4 b COLLECTOR CURRENT = 15 AMPS NPN TYPES - CONTINUED Device No C ase 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 TO-3 T O -3 TO-3 TO-3 TO-3 TO-3

wic 5020

Abstract: 2N5289 2N4301 2N5048 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388
Contextual Info: ^4 ^TRANSISTOR CO DE J a ñ M ñ 3 S E D D O O I E 11] S INC 84D 00129 D10DETRdf\l515T0R TO., INC. 201 686-0400 • Telex: 139-335 • Outside NY & NJ area call TOLL FREE 600-526-4581 FAX No. 201-575-5863 NPNTO-61 Type# PNP C o m p le­ m en t VCEOfSUS)

2N1724

Abstract: 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489
Contextual Info: General Transistor Corporation CASE le m a x TO-61 ss 5 to 20A V c e o (s u s ) = 4 0 -3 0 0 V NPN Power Transistors Typ. NO. VCEO («•) M 1C (mu) (A) hFE C/VCE |n lH U l & A/Y) 2N1724 2N1724A 2N1725 2N2611 80 120 80 50 5 5 5 10 20-90 @2/15 30-90 @2/15

2N4839

Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i

2N6805

Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab

AP1003

Abstract: 2N6587 2N6588 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584
Contextual Info: 0043592 A P I ELECTRONICS A P I INC 26C 00234 EL ECTRON ICS INC 2b D ]> F | DO435^5 □□□□53M h JT C O L L E C T O R C U R R E N T = 1 5 AM PS N PN T Y PE S - CONTINUED D ev ice No 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 2N6586 2N6587

2N6562

Abstract: 2N6583 2N6560 2N6512 2N6513 2N6514 2N6542 2N6543 2N6544 2N6546
Contextual Info: C 1IP 1 PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN V OLTAGE S NPN SAT . VO LTA GES M ax. h F: E CASE V CB V CE V EB V CE (V) 'c (A) M in . Max. >C (A) 'b (A) V CE (V) V BE (V) 2N6512 TO-3 350 300 6 3 4 10 50 4 0.8 1.5 2 2N6513 TO-3 400

2N5330

Abstract: SVT60-5 1N5410 2n4309 2NS330 SV050-12 cma 10012 SVT6062 to-5 package 2n5154 SV0300
Contextual Info: OPTEK T E C H N O L O G Y b T ^ Û SÛ O 0 0 0 1 4 2 5 051 MAE D INC OTK POWER SWITCHING TRANSISTORS Screened to equivalent per JANTX or JANTXV levels on request Case Style shown actual size TO-5/39 T O -5 9 T O -6 1 Is o la te d Is o la te d Discrete Power Switching Transistors

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

GSTU4040

Abstract: 2n6547 jantx
Contextual Info: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

LT049

Abstract: LT042 LT041 SDT13305 sgsf465 BUT56A BUT56 ET403 NPN sdt13304 ks03
Contextual Info: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max A V (BR)CEO on PD Max hFE fT ON) Min (HZ) r ICBO Max (A) Max (s) (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . .10 . . .15 . .

Contextual Info: General Transistor Corporation CASE le max ss TO-61 5 to 20A Vceo(sus) = 40-300V NPN Power Transistors VBE(SAT) 0IC/1B (V & A/V) ICEV0VCE (mA V) PO® TC = 25*C (W.M) Wt>®VCE I I I wc (A ®V) Ir (MHz) ton & W B (ju ® A/A) tOFF @IC/1B (p»®AfA) 1 @ 21.2

pnp 400v 10a

Contextual Info: Search Results Part number search for devices beginning "2N697." Top of Page Semelab Home If you are unable to find a suitable part, please contact us. [26-Mar-2002 12:28:58 PM] Datasheets are downloaded

2N3729

Abstract: 2N3551 2N6925A 2N6583 2N6923 2n6924
Contextual Info: AVAILABLE GEOMETRIES — SORTED BY Ic MAX lcMAX BV ceo Ran§e BV ebo Ran8e Low Current HfE From V To (V) From (V) To (V) @ lc mA Mid-Range HfE High Current HtE Typ VCE(sat) Typ Typ Cib @ 0.5V Cob @ 10V ^S/b A Geom. Pol. Use Code 0.03 0014 PNP 2 10 25 4 6

2N5302 EB

Abstract: 2N1463 2n4271
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3

2N6673

Abstract: 2N6546 2N6560 2N6583 2N6512 2N6513 2N6514 2N6542 2N6543 2N6544
Contextual Info: H P II NPN DEVICE PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BREEAKDOV VN V OLTAGE S SAT . V O LTA GES M<ax. h F:E 'c Max. >C (A) 'b (A) V CE (V) V BE (V) CASE V CB V CE V EB VCE (V) 2N6512 TO-3 350 300 6 3 4 10 50 4 0.8 1.5 2 2N6513 TO-3 400 350

1N5410

Abstract: TO-59 Package 2n4305 2N5330 2N6583 2N6590 SVT200-5C SVT250-3C SVT250-5C SVT300-3C
Contextual Info: OPTEK TEC H NO LO GY INC MAE D • L^ÖSflO Q D O m H S 021 ■ OTK POWER SWITCHING TRANSISTORS Screened to equivalent per JANTX or JAN TXV levels on request Case Style shown actual size TO-5/39 TO -59 Isolated |f TO-61 Isolated Discrete Power Switching Transistors

Contextual Info: NEW ENGLAND SEMICONDUCTOR STE D • bSbMTTa 0000053 [ Case 805 Type No. 2N1724 2N1724A PNP Comple­ ment VCE SAT @ IC/lB ( V @ A/A) VBE (SAT) @ IC/lB (v VBE @ IC/VCE (V @ A/V) * N E S I(max) = 5 to 2 0 A V ceo(sus) = 4 0 -3 0 0 V fT = 1 to 4 0 MHz NPN TO-61

AP1012

Abstract: AP1013 AP1005 2N6030 2N6583 2N6496 2N6579 2N6580 2N6581 2N6582
Contextual Info: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC 26C 2b INC 00234 D ]> F | DO435^5 □□□□53M h JT C O L L E C T O R C U R R E N T = 1 5 AM PS N PN T Y PE S - CONTINUED D ev ice No 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 2N6586 2N6587 2N6588

2N2692

Abstract: 2n3718 Maa 325 2N6378 2N1495 2N5055 2N5143 2N5867 2N5872 2N6563
Contextual Info: G E N E R A L T R A N S I S T O R CO R P 24E D • 3^SaD01 D O D O D ^ fi ■ G eneral T ran sisto r Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905