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    2N6653 Search Results

    2N6653 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6653 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=300 / Ic=20 / Hfe=10min / fT(Hz)=15M / Pwr(W)=175 Original PDF
    2N6653 Diode Transistor Transistor Short Form Data Scan PDF
    2N6653 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    2N6653 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6653 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6653 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6653 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6653 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6653 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6653 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6653 Unknown Transistor Replacements Scan PDF
    2N6653 New England Semiconductor NPN TO-3 Transistor Scan PDF
    2N6653 Semelab Bipolar Transistors (CECC and High Rel) & High Energy Scan PDF

    2N6653 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N6653 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6653 O204AA) 16-Jul-02

    2N6653

    Abstract: No abstract text available
    Text: ^E.mi-donciiLcto'i ^Products., Line. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistors 2N6653 DESCRIPTION •With TO-3 package •High voltage capability •Fast switching speeds •Low saturation voltage


    Original     		PDF 2N6653 13MAX 2N6653

    2N6653

    Abstract: No abstract text available
    Text: 2N6653 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6653 O204AA) 31-Jul-02 2N6653

    Untitled

    Abstract: No abstract text available
    Text: 2N6653 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6653 O204AA) 18-Jun-02

    2N6653

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N6653 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·Switcing regulators ·Inverters ·Solenoid and relay drivers


    Original     		PDF 2N6653 2N6653

    2N6653

    Abstract: No abstract text available
    Text: JMnic Product Specification 2N6653 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage capability ・Fast switching speeds ・Low saturation voltage APPLICATIONS ・Switcing regulators ・Inverters ・Solenoid and relay drivers ・Deflection circuits


    Original     		PDF 2N6653 2N6653

    2N7058

    Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
    Text: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20


    Original     		PDF VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066

    2N6805

    Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab


    Original     		PDF 2S81188 2S8891 2S8632K SML3552 SML3575 SML3578 SML69501 SML69509 2N6805 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525

    BC140-16

    Abstract: T053 BC109C NPN BC108A BC107A bc108 IC hr 2N6589 2N6590 2N6609 2N6653
    Text: MAE D • 0133187 0 0 0 D M4 5 SEM ELABE G31 I S ML B SEMELAB LTD BI-POLAR TRANSISTO RS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N6589 2N6590 2N6594 2N6609 2N6653 2N6654 2N6655 2N6671 2N6672 2N6673 2N6674 2N6675 2N6676 2N6677 2N6678 2N6686 2N6687 2N6688


    OCR Scan     		PDF ai331fl7 0000MH5 2N6589 2N6590 2N6594 2N6609 2N6653 10min 2N6654 BC140-16 T053 BC109C NPN BC108A BC107A bc108 IC hr

    Untitled

    Abstract: No abstract text available
    Text: GENERAL SEMICONDUCTOR 3918590 GENERAL .jír ^ TS » r i B i l ñ S T O OOOB144 S EMI CON DU CT OR General Semiconductor . Industries, Inc. 95D 02144 D 15 Am p NPN 300, 350, 400V 2N6653, 54, 55 SQ U H BEn COMPANY X G SR 15030,35,40 C 2R H IG H SPEED /H IG H PO W ER SW ITCH IN G T R A N S IS T O R S


    OCR Scan     		PDF OOOB144 2N6653, P6302 7B92A 67QtiH X910-950-1942

    Untitled

    Abstract: No abstract text available
    Text: ~7¡Ü GENERAL SEMICONDUCTOR » T | 3 c11öSi:iD G Q 0 n 3 1 72C 01931 391 859 0 GENE RA L S E M I C ON DU CTOR 1$T General ^ 3^ Semiconductor « Industries, Inc • fi ]|~ 3 3 ^ S' D NPN TRANSISTOR CHIP S q i l H R E n COMPANY “ 21 ” Typical Device Types: 2N6653, 2N6654, 2N6655, XGSR10045


    OCR Scan     		PDF 2N6653, 2N6654, 2N6655, XGSR10045 30nsec 150nsec 1000nsec 250nsec 50/15A, 10/3A

    2N6655

    Abstract: 2N6654 26X16
    Text: General Semiconductor Industries, Inc. ¥ NPN TRANSISTOR CHIP " 21 " Typical Device Types: 2N6653, 2N6654, 2N6655, GSDS50020 20 - 50 AMP Fast Switching Bonding Pad Areas Base 3 3 4 x 1 6 m ils Emitter (4) 26 X 16 m ils Front Metallization: Aluminum • C 2R For


    OCR Scan     		PDF 2N6653, 2N6654, 2N6655, GSDS50020 50/15A, 10/3A 2N6655 2N6654 26X16

    IC 8030

    Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
    Text: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3


    OCR Scan     		PDF bSb4clc13 2N5933d 2N5934d 2N5935d 2N5936d 2N6677 2N6678 2N6686 2N6687 2N6688 IC 8030 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


    OCR Scan     		PDF 5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2N3055

    Abstract: 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955
    Text: General Transistor Corporation CASE lc M A X V ceo (SUS) TO-3 = 2-50A = 35-500V NPN Power Transistors PNP VCEO M 1C (max) (A) hFE@ic/Vc* (min-m« @ A/V) VCE(SAT) @IC/IB (V @ A/A) V8E @IC/VCE (V @ A/V) 40 55 40 55 6 6 6 6 15-45 @ 1.5/4 15-45 @ 1.5/4 25-75 @1.5/4


    OCR Scan     		PDF 5-500V 2N1487 2N1488 2N14S9 2N1490 2N6677 2N6678 2N6686 2N6667 2N3055 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955

    2N3902

    Abstract: 2N4347 2N5157 2N5239 2N5240 2N5466 2N5467 2N5685 2N5686 2N6511
    Text: SEM ICO NDU CT OR TECHNOLOGY OSE D | fll3b4Sñ □□□□S53 E | ~ 7“<- 3 3 - o / SEM ICONDUCTOR TECHNOLOGY, INC. ~ o.13l S r^ J,ay o ! ! Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTO RS


    OCR Scan     		PDF A13L45B o413LS^ 2N3902 2N4347 2N5157 2N5239 2N5240 2N5466 2N5467 2N5685 2N5686 2N6511

    2N6654

    Abstract: 2N66S5 P6302 2N6655 2n6653 XGSR15040-I
    Text: ^ % ^ General Semiconductor . Industries, Inc. 15 A m p N P N 300. 350. 40 0 V 2 N 6 6 5 3 , 54, 55 XG S R 1 5030. 35. 40 X G S R 1 5 0 3 0 - I . 35-I. 40-I C 2R H IG H S P E E D /H IG H POW ER S W IT C H IN G T R A N S IS T O R S The XGSR series is an NPN double diffused epitaxial transistor designed for high speed switching


    OCR Scan     		PDF P6302 AM503 2N6654 2N66S5 2N6655 2n6653 XGSR15040-I

    2N6575

    Abstract: MJ13014 2N6583 2N5804 2N5805 2N6249 2N6250 2N6251 2N6542 2N6543
    Text: Type* PUP Comp] •- VUO tut moni (Votto 1C Max DFE IC/VCE (Mln-Max ©A/») 2N5804 2N5805 40853 225 300 375(VCER) 5.0 5.0 10 10-100@5/4 10-100@5/4 >10@5/4 2N6249 2N6250 2N6251 40854 2N6542 2N6543 2N6544 2N6545 2N6546 2N6547 2N6560 2N6561 2N6573 2N8574 2N6575


    OCR Scan     		PDF 2N5804 2N5805 2N6249 2N6250 2N6251 2N6542 2N6543 2N6544 2NS545 2N6546 2N6575 MJ13014 2N6583

    2N6583

    Abstract: 2N6736
    Text: -Jfantran Ä TTM , i [continued] STANDARD PART LIST Devices, inc. 2N NUMBER (BIPOLAR CHIP SELECTIONS JEDEC 2N6276 2N6277 2N6278 2N6279 2N6280 CHIP 179 179 179 179 179 JEDEC 2N6341 2N6359 2N6360 2N6371 2N6372 CHIP 144 331 331 345 116 JEDEC 2N6438 2N6469


    OCR Scan     		PDF 2N6276 2N6277 2N6278 2N6279 2N6280 2N6281 2N6314 2N6338 2N6339 2N6340 2N6583 2N6736

    t03 package transistor pin configuration

    Abstract: 2n6655 GSDR10020 xgsr15035-1 XGSR15040 TO3 HEATSINK GSTR6030-I GSTR6035 GSTR6040 GSTR6040-I
    Text: SÛUARE » CO/ GENERAL -A f hD D • fiSEISSÜfl 0001057 60C 01857 GENERAL SEMICONDUCTOR INDUSTRIES, INC. 1 1 I b ■ D N PN Isolated Collector TO-3 ISOLATED COLLECTOR HIGH SPEED, HIGH POWER SWITCHING TRANSISTOR The isolated collector package configuration has been designed for use In switching applications


    OCR Scan     		PDF TWX910r9S0-1942 t03 package transistor pin configuration 2n6655 GSDR10020 xgsr15035-1 XGSR15040 TO3 HEATSINK GSTR6030-I GSTR6035 GSTR6040 GSTR6040-I

    GSTR120

    Abstract: SR10030
    Text: Ic = 15 AMPS DATA DEVICE b v ceo hFE@ Min. le ^CE VOLTS P D@ 100°C WATTS AMPS VOLTS VOLTS AMPS IcBO @ v CB SHEET PG. NO. TYPE PACKAGE VOLTS BVcbo VOLTS GSDR10020 GSDR10025 GSTR12030 GSTR12035 GSTR12040 TO-3 TO-3 TO-3 TO-3 TO-3 200 250 300 350 400 250 300


    OCR Scan     		PDF GSDR10020 GSDR10025 GSTR12030 GSTR12035 GSTR12040 2N6341 GSTR120 SR10030

    GSTU4040

    Abstract: 2n6547 jantx
    Text: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0


    OCR Scan     		PDF 2N4300 2N4863 2N4864 2N5148 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 GSTU4040 2n6547 jantx

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711