2N680 Search Results
2N680 Price and Stock
Walsin Technology Corporation 0402N680J100CTMultilayer Ceramic Capacitors MLCC - SMD/SMT 68pF, +-5%, 10V |
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0402N680J100CT | 117,975 |
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Walsin Technology Corporation 0402N680J500CTMultilayer Ceramic Capacitors MLCC - SMD/SMT 68pF +-5% 50V |
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0402N680J500CT | 54,442 |
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Walsin Technology Corporation 0402N680J250CTMultilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 68 pF, +/- 5% 25 V T&R GP |
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0402N680J250CT | 48,860 |
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Walsin Technology Corporation 0402N680G500CTMultilayer Ceramic Capacitors MLCC - SMD/SMT 0402 MLCC NPO 68 pF, +/- 2% 50 V T&R GP |
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0402N680G500CT | 38,042 |
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Susumu Co Ltd RG2012N-680-W-T1Thin Film Resistors - SMD 1/8W 68 Ohms 0.05% 0805 10ppm |
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RG2012N-680-W-T1 | 24,405 |
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2N680 Datasheets (92)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N680 |
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Motorola Semiconductor Datasheet Library | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N680 | Unknown | Semiconductor Master Cross Reference Guide | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N680 | Unknown | Shortform Transistor Datasheet Guide | Short Form | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N680 | Unknown | Transistor Shortform Datasheet & Cross References | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N680 | Unknown | Vintage Transistor Datasheets | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N680 | Unknown | GE Transistor Specifications | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N680 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N680 | Unknown | Shortform Transistor PDF Datasheet | Short Form | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N680 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6800 | Defense Supply Center Columbus | N-Channel FET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6800 | International Rectifier | TRANS MOSFET N-CH 400V 3A 3TO-205 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6800 | International Rectifier | HEXFET TRANSISTORS | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6800 |
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N Channel MOSFET; | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6800 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V TO-205AF TO-39 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N6800 |
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FET, 2 VThreshold, ID 3 A | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6800 |
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N-CHANNEL ENHANCEMENT POWER MOSFET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6800 | Harris Semiconductor | Power MOSFET Data Book 1990 | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6800 | International Rectifier | TO-39 Package N-Channel HEXFET | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6800 | International Rectifier | TO-39 N-Channel HEXFET Power MOSFETs | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N6800 |
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European Master Selection Guide 1986 | Scan |
2N680 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2N6804Contextual Info: Rugged Power MOSFETs 2N6804 File N um ber 2217 Avalanche-Energy-Rated P-Channel Power MOSFETs TE R M IN A L DIAGRAM -11 A, -100V r Dsiom = 0.30D Features: • S ingle pulse avalanche e n ergy rated ■ SOA is p o w e r-d is s ip a tio n lim ite d ■ N anosecond s w itc h in g speeds |
OCR Scan |
2N6804 -100V 2N6804 92CS-4330Â 92CS-43278 | |
2N6801LCC6Contextual Info: Search Results Part number search for devices beginning "2N6801" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) 2N6801 N-Channel TO39 450V 2.5A 25W |
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2N6801" 2N6801 2N6801LCC4 2N6801LCC4-JQR-B 2N6801LCC6 2N6801LCC6-JQR-B 2N6801SMD 2N6801SMD-JQR-B O276AB) | |
1RF9130
Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
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OCR Scan |
JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790 JANTX2N6792 JANTX2N6794 JANTX2N6796 JANTX2N6798 JANTX2N6800 1RF9130 jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120 | |
Contextual Info: 2N6804+JANTX Transistors P-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)11# I(DM) Max. (A) Pulsed I(D)7.0# @Temp (øC)100 IDM Max (@25øC Amb)50# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75# Minimum Operating Temp (øC) |
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2N6804 | |
JANTX2N6796
Abstract: 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6798 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798
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2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798 2N6800, JANTX2N6800, JANTXV2N6800 2N6802, 2N6798 transistor c 557 2N6800 2N6802 JANTX2N6800 JANTX2N6802 JANTXV2N6796 JANTXV2N6798 | |
2N6799Contextual Info: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel 2N6799 JTX, JTXV 2N6800 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosnm and a high transconductance. FEATURES |
OCR Scan |
2N6799 2N6800 2N6799 | |
Contextual Info: 2N6796U, 2N6798U, 2N6800U, 2N6802U Qualified Levels: JAN, JANTX, JANTXV and JANS* N-CHANNEL MOSFET Compliant Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. The 2N6798U part number is also qualified to the JANS level. These |
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2N6796U, 2N6798U, 2N6800U, 2N6802U MIL-PRF-19500/557 2N6798U O-205AF T4-LDS-0047-1, | |
2N6802
Abstract: IRFF430
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2N6802 IRFF430 O-205AF) 2N6802 IRFF430 | |
2N6880
Abstract: 2N6798 JANTXV
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2N6796, 2N6798, 2N6800, 2N6802 MIL-PRF-19500/557 2N6798 T4-LDS-0047, 2N6880 2N6798 JANTXV | |
Contextual Info: 2N6800 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET. |
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2N6800 O205AF) 11-Oct-02 | |
p12p10
Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
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OCR Scan |
2N6804 2N6849 2N6851 2N6895 2N6896 2N6897 2N6898 IRF9130, IRF9131, IRF9132, p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240 | |
2N6800Contextual Info: SEME 2N6800 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . BVDSS ID RDS(on) 0 .8 9 m a x . (0 .0 3 5 ) |
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2N6800 00A/ms 300ms, 2N6800 | |
MOSFET
Abstract: 2N6802
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2N6802 IRFF430 00A/US 300us, MOSFET 2N6802 | |
Contextual Info: 2N6802 IRFF430 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE POWER MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. BVDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) |
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2N6802 IRFF430 O-205AF) | |
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Contextual Info: 2N6800 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT POWER MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. BVDSS ID RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 400V 3.0A Ω |
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2N6800 O205AF) 2N6800" 2N6800 2N6800LCC4 2N6800LCC4-JQR-B 2N6800SMD 2N6800SMD-JQR-B O276AB) | |
mil-prf-19500/557
Abstract: 2N6800 2N6800U
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MIL-PRF-19500/557 2N6800 2N6800U Opera0803 T4-LDS-0148 mil-prf-19500/557 2N6800 2N6800U | |
2N6802
Abstract: 2N6802U
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MIL-PRF-19500/557 2N6802 2N6802U T4-LDS-0149 2N6802 2N6802U | |
2N6802Contextual Info: MOTOROLA SC XSTRS/R F 12E 0 | b3b?25M GQöbbbö 0 | 2N6802 CASE 79-05, STYLE 6 TO-39 TO-205AF MAXIMUM RATINGS Symbol Value U nit Drain-Source Voltage Rating Voss 500 Vdc Drain-Gate Voltage (Rq s * 1 . 0 m il) Vd g r 500 Vdc Vg S Drain Current Continuous |
OCR Scan |
2N6802 O-205AF) 2N6802 | |
DD 127 D TRANSISTOR
Abstract: transistor DD 127 D 2N6880 2N6798 2N6796 2n6796 jantx 2N6796 JANTXV 2N6802 2n6800 2N6798 JANTXV
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2N6796, 2N6798, 2N6800, 2N6802 MIL-PRF-19500/557 2N6798 2N67n T4-LDS-0047, DD 127 D TRANSISTOR transistor DD 127 D 2N6880 2N6796 2n6796 jantx 2N6796 JANTXV 2N6802 2n6800 2N6798 JANTXV | |
DD 127 D transistor
Abstract: 2n6798u 2N6796U
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2N6796U, 2N6798U, 2N6800U, 2N6802U MIL-PRF-19500/557 2N6798U O-205AF 2N6796, 2N67mensions T4-LDS-0047-1, DD 127 D transistor 2N6796U | |
asz21
Abstract: AF117 AF114 OC170 Low-Power Germanium PNP GT346B 2G381 2SA239 2n2398 s100
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2N1158 2N615 2N2966 2N1158A 2SA239 2N3399 2SA434 2SA435 2N1744 asz21 AF117 AF114 OC170 Low-Power Germanium PNP GT346B 2G381 2n2398 s100 | |
2N6801-SM
Abstract: BFC49
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OCR Scan |
2N6800SM 2N6801 2N6801-SM 2N6801LCC4 2N6802 2N6802SM 2N6845 2N6847 2N6849 2N6849L BFC49 | |
2N6800Contextual Info: 2N6800 {£ HARRIS N -Channel Enhancem ent-M ode Power MOS Field-Effect Transistor A ug ust 1 9 9 1 P a ckage Features T O -2 0 5 A F • 3 A, 4 0 0 V * rD S o n ) BOTTOM VIEW = m C. • S O A is P o w e r - D is s ip a t io n L im ite d • N an o se co n d |
OCR Scan |
2N6800 2N6800 | |
2N6804Contextual Info: 2 } H A R R 2N6804 IS Avalanche-Energy-Rated P-Channel Power MOSFETs A ugust 1 9 9 1 Package Features TQ-204AA BOTTOM VIEW • -1 1 A, -1 0 0 V * rD S on = 0 .3 0 f i DRAIN (FLANGE) SOURCE • Single Pulse A valanche E nergy Rated • S O A is P ow er-D issip atio n Lim ited |
OCR Scan |
2N6804 TQ-204AA SSCS-43304 92CS-43307 2N6804 |