2N709 Search Results

2N709

Abstract: MC353 C353 MC350 3av6
Contextual Info: I M E C L M C 3 5 0 series HALF-ADDER MC353 H alf-adder that p ro vid es the “ S U M " , “ C A R R Y " , and “ N O R " fu nctions s im u lta­ neously. SWITCHING TIMES TEST CIRCUIT 0 "I r ~ —0.8*— ' 2N709 Stray capacitance introduced by the test jig:

2222 NPN

Abstract: 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2N708 2N709 2N753 2369A
Contextual Info: JEDEC TRANSISTORS 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A 2N 2905

TO-257AB

Contextual Info: T e m ic 2N7090 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS OO ' ri)S(on) (Q ) I d (A) 0.80 -5 .7 -2 0 0 TO-2S7AB Hermetic Package S Q o Case Isolated Ô D G D S P-Channel M OSFET Top View

Contextual Info: 2N709 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N709 Availability Online Store Diodes

MRF9331

Abstract: 2SC3029 2N2206 2SC2821 MMBR5031 K918 MMT3960A 2n3681 340t 2SC330
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N2318 2N2320 2N3953 MMT3960 lBFT24 2N5186 ST6110 ST6125 ST6120 MMT807 ~~~~~~1 15 20 2N2967 2N3010 2N2475 2N709 MM1748A 2N3832 2N709A 2N2784 ~~~~;~ 25 30 2N2257 2N3681 2SC3011 2SC2876 2SC3301 MRF9331

2N7091

Contextual Info: 2N7091 MECHANICAL DATA Dimensions in mm inches P–CHANNEL ENHANCEMENT MODE TRANSISTOR 10.6 (0.42) 4.6 (0.18) 16.5 (0.65) 0.8 (0.03) 10.6 (0.42) 1.5(0.53) 3.70 Dia. Nom V(BR)DSS ID(A) RDS(on) 12.70 (0.50 min) 1 2 3 -100V -14A Ω 0.20Ω 1.0 (0.039) 2.54 (0.1)

2N7091

Contextual Info: ITSiicanix 2N7091 in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY -10 0 •d k k.O V BR DSS (A) 0.20 -1 4 1 GATE 2 DRAIN 3 SOURCE Case Isolated 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

2N7092

Contextual Info: 2N7092 CX'SiSconix in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V fDS(ON) <n) (A) -200 0.50 -8.0 V(BR)DSS •d 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

2N7090

Abstract: MC 150 transistor
Contextual Info: 2N7090 Siliconix PĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) -200 0.80 -5.7 TOĆ257AB Hermetic Package S G Case Isolated D G D S PĆChannel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

2n915

Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION 2N703 BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN MAX *ICES *ICEV NPN AMPL/SWITCH 25 25 5.0 - 2N706C NPN SAT SWITCH 40 2N708 NPN SAT SWITCH 2N709A NPN SAT SWITCH 2N717 2N718A VCB (V) hFE

2N709

Abstract: ic 709 2N3010
Contextual Info: 2N709 2N 3010 SILICON PLANAR NPN U LT R A HIGH-SPEED S ATU R ATED SWITCHES The 2N 709 and 2N 3010 are silicon planar epitaxial NPN transistors in Jedec T O -1 8 metal case. They are designed fo r switching applications up to 50 mA. ABSOLUTE M A X IM U M RATINGS

2N7092

Contextual Info: SILICONIX INC 33E 1 ITÜSSää • 025*4735 DPlbOSS 4 « S I X 2N7092 P-Channel Enhancement Mode Transistor TO -257A B H erm etic Package TOP VIEW o PRODUCT SUMMARY ■d V BR|DSS rDS(ON ( ii) (A) -2 0 0 0.50 -8 .0 1 GATE 2 DRAIN 3 SO URC E 1 2 3 C ase Isolated

TT 2222 npn

Abstract: 709a 2N709 2n h 2222a 2N698 2N708 2N753 2222 NPN
Contextual Info: à Si a. UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904

2N7091

Contextual Info: 2N7091 Siliconix PĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) -100 0.20 -14 TOĆ257AB Hermetic Package S G Case Isolated D G D S PĆChannel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: inc. 20 STERN AVE. SPRINGFIELD, NEW JERSE? 07081 U.S.A. TELEPHONE: 201 376-2922 (212) 227-6005 TELEX: 13-8720 2N709 N-P-N EPITAXIAL PLANAR SILICON TRANSISTOR THE COLLECTOK IS IN ELECTRICAL CONTACT WITH THE CASE. ALL JEDEC TO-1I DIMENSIONS AND NOTES A«E AFrllCAUE.

Contextual Info: T e m ic 2N7090 Siliconix_ P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) ( ß ) I d (A) -2 0 0 0.80 - 5 .7 TO-257AB H erm etic Package S 9 O C ase iso lated O D UUU G D S Tbp View P-C hannel M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

2N7090

Contextual Info: C T S ilico n ix ^ U r 2N7090 in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V BR DSS -2 0 0 •d r DS(ON) (H ) (A) 0 .8 0 -5 .7 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

Contextual Info: Tem ic 2N7091 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V ) fD S(on) ( ß ) I d (A ) -1 0 0 0 .2 0 -1 4 T O -2 5 7 A B H e rm e tic P a c k a g e S (* O Case Isolated O D uuu G D S Top View P-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

2N 2222 A NPN, TO-18

Abstract: 2N2222 2n h 2222a 2222a NPN 706a 709a 2N708 2N709 2N753 2222 NPN
Contextual Info: à a.UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A

2N7091

Contextual Info: 2N7091 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –100 0.20 –14 TO-257AB Hermetic Package S G Case Isolated D G D S P-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter

2N7091

Abstract: 14A-30
Contextual Info: 2N7091 MECHANICAL DATA Dimensions in mm inches 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) P–CHANNEL ENHANCEMENT MODE

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T'lZ-ö! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. Vcb V CE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419