2S6KX16 Search Results
2S6KX16 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: ^EDI EDI8F16257C '2S6Kx16 SRAM Module EL£CIR0 MC 0CSI6 N& MC 256KX16 Static RAM High Speed CMOS, Module Features 256Kx16bitCMOS Static The EDI8F16257C is a 256Kx16 CMOS Static RAM Mod Random Access Memory Module ule consisting of four 4 256Kx4 CMOS Static RAMs in |
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EDI8F16257C 2S6Kx16 256KX16 256Kx16bitCMOS EDI8F16257C 256Kx4 EDBF16257C | |
Contextual Info: KM6164002B, KM6164002Bi CMOS SRAM 2S6KX16 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N • Fast Access Time 10,12,15ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM6164002B-10 : 260mA(Max.) |
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KM6164002B, KM6164002Bi 2S6KX16 KM6164002B-10 260mA KM6164002B 255mA 250mA KM6164002BJ | |
G001SContextual Info: H igh Perform ance 256K.X 16 CMOS DRAM H AS4C256K16F0 A Hiah Speed 2S6KX16 CMOS DRAM Fast pane mode Preliminary information Features • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s b y 16 b its • R e a d -m o d ify -w rite • H ig h sp e ed - 5 0 /6 0 ns RAS access tim e |
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AS4C256K16F0 2S6KX16 4C256K16F0-50) 40-pin S4CZ56K16F0-60JC 16F0-50TC l-30002-A. G001S | |
8X8 INC
Abstract: 8x8 vcp LVP 47-10-43 LD8213 8x8 vcp tse 1885 40BS CCIR601 YUV422 8x83404
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8x83404 8X8 INC 8x8 vcp LVP 47-10-43 LD8213 8x8 vcp tse 1885 40BS CCIR601 YUV422 | |
KM736V789T-60
Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
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256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L | |
hy5142648
Abstract: HY514264
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HY514264B 16-bit 16-bits hy5142648 HY514264 | |
Trident vga
Abstract: trident SAA7194
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768x576x16 Trident vga trident SAA7194 | |
Contextual Info: MITSUBISHI LSIs TARGET SPEC REV. 2.1 M5M4V4169TP-15,-20 4MCDRAM:4M(256K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec, and some of the contents are subject to change without notice |
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M5M4V4169TP-15 256K-WORD 16-BIT) 1024-WORD M5M4V4169TP 144-word 16-bit 1024word | |
SRAM 64KX8 5VContextual Info: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O |
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256K- 128KX8 64KX16 64KX8 32KX16 32KX8 128KX8 28gxl6| SRAM 64KX8 5V | |
Contextual Info: m H ! E D I8 F 1 6 2 5 7 Ç 256KXW SR fiM Module electronic [ ééjêws. 256Kx16Static RAM H i# Speed CMOS, Module iFeatures 256KX16 bit CMOS Static The E DI8F16257C is a 256Kx16 CMO S Static RAM Mod Random Access Memory Module ule consisting of four 4 256Kx4 CMOS Static RAMs in |
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256KXW 256Kx16Static 256KX16 DI8F16257C 256Kx4 A0-A17 EDI8F16257C20IV16C EDI8F16257C25M6C EDI8F16257C35M6C | |
sharp lm64p
Abstract: IC HS 8110 vlbus ide sp1140 lg crt monitor circuit diagram schematic diagram crt tv sharp Sharp TLP 331 LG VARIABLE FREQUENCY DRIVE is3 486DX MEMORY CONTROLLER LM-CK53-22NEZ
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SPC8110 X07-DS-001-15 SP1-14 7T32T 000b2Q7 SPC8110 QFP8-208 SP1-144 X07-SP-001-14 sharp lm64p IC HS 8110 vlbus ide sp1140 lg crt monitor circuit diagram schematic diagram crt tv sharp Sharp TLP 331 LG VARIABLE FREQUENCY DRIVE is3 486DX MEMORY CONTROLLER LM-CK53-22NEZ | |
Contextual Info: »flYUNDA» > - • HY514260B 256Kx16, CMOS DRAM with /2CAS DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time(50, 60 |
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HY514260B 256Kx16, 16-bit 16-bits | |
8s100
Abstract: HY62U16100LLR2-I HY62U256
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HY6264AP HY6264ALP HY6264ALLP HY6264AJ HY6264ALJ HY6264ALLJ HY6264ALP-I HY6264ALLP-I HY6264ALJ-I HY6264ALLJ-1 8s100 HY62U16100LLR2-I HY62U256 |