2SC2880 Search Results

Contextual Info: T O SH IB A 2SC2880 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC2880 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. 1.6MAX. High Voltage : VCEO = 150V High Transition Frequency : fp = 120MHz P q = 0.8—2W (Mounted on Ceramic Substrate)

NEC k 3654

Abstract: 2SC3536 DTC124ES Hitachi 3640 DTC114ES 2SC 3674 S 2SC3738 2sc3242a 2SC3535 DTC144ES
Contextual Info: - m € T y p e No. £ Manuf. 2SC 3 6 4 0 iE. 2SC 3 6 4 1 H 2SC 3 6 4 2 ^ & H # SANYO TOSHIBA S NEC 2SC3643 2SC3536 2SC3644 2SC3536 tL HITACHI * ± i1 FUJITSU tfi T MATSUSHITA # 2SC3535 2SC3737 H. n 2SC3536 2SC3738 2SC 3 6 4 4 J H n 2SC3536 & 2SC2880 2SC 3 6 4 6

Contextual Info: 2SC2880 SILICON NPN TRIPLE DFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm 1.6 MAX 4.6M A X. FEATURES: . High Voltage 1.7 MAX. : V c e o =150V m . High Transition Frequency : fT=120MHz - . P c = l ~ 2 W Mounted on Ceramic Substrate . Small Flat Package

2SA1200

Abstract: 2SC2880
Contextual Info: 2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC2880 High Voltage Switching Applications • High voltage: VCEO = 150 V • High transition frequency: fT = 120 MHz • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

2SA1200

Abstract: 2SC2880
Contextual Info: 2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC2880 High Voltage Switching Applications Unit: mm • High voltage: VCEO = 150 V • High transition frequency: fT = 120 MHz • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)

2SA1200

Abstract: smd marking Y 2SC2880 SMD B100
Contextual Info: Transistors SMD Type High Voltage Switching Applications 2SA1200 Features High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SC2880 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage

Contextual Info: SMD Type Product specification 2SA1200 Features High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SC2880 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage VCEO

2SA1200

Abstract: 2SC2880
Contextual Info: TO SH IBA 2SC2880 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC2880 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. 1.6 M A X. 4.6 M A X. High Voltage : V0e q = 15OV High Transition Frequency : frp= 120MHz Pq = 0.8~2W (Mounted on Ceramic Substrate)

Contextual Info: TOSHIBA 2SC2880 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC288Q HIGH VOLTAGE SWITCHING APPLICATIONS. High Voltage : V q E 0 = !50V High Transition Frequency : fp=120MHz P q = Ö.8~2W (Mounted on Ceramic Substrate) Small Flat Package

2SC2880

Abstract: 2SA1200
Contextual Info: Transistors SMD Type High Voltage Switching Applications 2SC2880 Features High Voltage : VCEO = 150V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1200 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage

Contextual Info: 2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC2880 High Voltage Switching Applications • Unit: mm High voltage: VCEO = 150 V • High transition frequency: fT = 120 MHz • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

2SC2880

Abstract: 2SA1200 marking AO
Contextual Info: TOSHIBA 2SC2880 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC2880 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. 1.6 M AX — High Voltage : VCEO —150V High Transition Frequency : frp = 120MHz P q = 0.8~2W (Mounted on Ceramic Substrate)

2SA1200

Abstract: 2SC2880
Contextual Info: TO SH IBA 2SC2880 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC2880 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 1.6 M A X. 4.6 M A X. High Voltage : V0e q = 15OV High Transition Frequency : frp= 120MHz Pq = 0.8~2W (Mounted on Ceramic Substrate)

Contextual Info: 2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC2880 High Voltage Switching Applications • High voltage: VCEO = 150 V • High transition frequency: fT = 120 MHz • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

Contextual Info: POWER M INI PACKAGE S E R IES ^ ! SOT-89 a.î'VîYw; 'S T T ITT Application Pc * Mounted on ceramic substratq o f 250mmJ x 0.8mm v CEO >C Pc PC* V) (A) (W) (W) 1.5 0.5 1 h FE Type No. NPN PNP f t TYP. v CE(sat) M AX- V CE >C 'c 'b V CE •e (V) Im A l

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

S500M

Contextual Info: TOSHIBA 2SA1200 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 1 200 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm 1.6MAX. 4.6MAX. High Voltage 1.7MAX. : V q e o - - 150V 0.4 ±0.05 High Transition Frequency : fx = 120MHz (Typ.) P q = 1 ~ 2W (Mounted on Ceramic Substrate)

2SD977

Abstract: 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162
Contextual Info: 228 - s « « tt Manuf. Type No. 2SD 973 -s-virv fc' T 2SD 973A K T 2SD 974 B ÎL tt y 2SD 972 2SD H ï¥ SANYO JÜ ^ TOSHIBA Vy>TV 2SD 971 CD - 975> 2SD 976 g fr 2SD 976A B ÎL 2SD 977 E. & 2SD 978 H H & 2S0 979 2SD1190 a m NEC B ÎL H ITACH I 2SD1162 2SD 11 1 4 K

2SC3301

Abstract: 2sa120 2SC2880
Contextual Info: llll Powered by 2 POWER MINI PACKAGE SERIES (S0T-89) ICminer.com Electronic-Library Application Pc * Mounted on ceramic substrat? of 250mma x 0.8mm v CE0 >C Pc PC* (V) (A) (W) (W) hFE Typo No. NPN PNP f-j- TYP. v CE(sat) M A X - V CE ic •c •b V CE >E

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

2SC9830

Abstract: 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 >= PMBT5550 PMBT5550 BFY43 BFY43 BF117 BF117 MPS002 TRS140 SE701S A5T5550 2N5550 TMPT5550 MMBT5550 MMBT5550 MMBT5550 2N5831 MMBT5551 JE5550A 2N5832 BC532 ~4261r 25 30 - 2N4270 JE5550 BSR19 A BSR19 (A)

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

Contextual Info: TOSHIBA TRANSISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL 2 SA1200 DATA SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS (2SA1200) Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • • • • • High Voltage :V c e O = - 150V High Transition Frequency : fp= 120MHz (Typ.)