2SA1585 Search Results

Contextual Info: Transistors Low V c e s a t Transistor (-20V, -3A ) I 2SB1424 / 2SA1585S •E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(aat). 2SB1424 VcE(sat) = -0 .2 V (Typ.) 2SA1585S (Ic/ I b = - 2 A / - 0 . 1 A ) 2) Excellent DC curre nt gain charac­

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1585S TRANSISTOR PNP TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD : 3. BASE 0.4W (Tamb=25℃) Collector current I CM : -2A Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors C 2SA1585E WBFBP-03A TRANSISTOR 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B E C 1. BASE FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A)

Contextual Info: Transistors Low Frequency Transistor 20V, 3A 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FExternal dimensions (Units: mm)

4115S

Abstract: transistor marking 2SA1585 2SC4115
Contextual Info: 2SC4115 SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 4.6 4.4 1.8 1.4 1.6 1.4 3. EMITTER B 3 2.6 4.25 2.4 3.75 Features — — 0.8 MIN Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) Excellent current gain characteristics. Complements to 2SA1585

2SA1585S

Contextual Info: MCC TM Micro Commercial Components 2SA1585S 2SA1585S-Q 2SA1585S-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • PNP Plastic-Encapsulate Transistors Lead Free Finish/Rohs Compliant "P"Suffix designates

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • 2SA1585S PNP Plastic-Encapsulate Transistors Power dissipation: PD = 0.4W Tamb=25℃

2SA1585S

Abstract: TO92S
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1585S TRANSISTOR PNP TO-92S FEATURES 1. EMITTER Low VCE(sat). Excellent DC current gain characteristics. Power dissipation z z z 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SC4115

Abstract: 2SA1585 4115S 4115
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR NPN SOT-89 FEATURES z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) z Excellent current gain characteristics. z Complements to 2SA1585

2SA1585E

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors C 2SA1585E WBFBP-03A TRANSISTOR 1.6x1.6×0.5 unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B E C 1. BASE FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A)

2SA1585S

Contextual Info: Transys Electronics L I M I T E D TO-92S Plastic-Encapsulated Transistors 2SA1585S TRANSISTOR PNP TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PD : 0.4W (Tamb=25℃) Collector current I CM : -2A Collector-base voltage V(BR)CBO : -20V

Contextual Info: Transistors Low VCE sat Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *2A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. FExternal dimensions (Units: mm)

2SA1585S

Abstract: 2SC4115S SC-72
Contextual Info: 2SC4115S Transistors Low Frequency Transistor 20V, 3A 2SC4115S zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SA1585S. 2SC4115S 2±0.2

sit transistor

Abstract: transistor Ic 1A datasheet transistor sit 20V3A 2SD2150 2SA1585S 2SB1424 2SC4115S A-74
Contextual Info: Transistors Low VCE sat Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *2A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. FExternal dimensions (Units: mm)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1585S TRANSISTOR PNP TO-92S FEATURES 1. EMITTER Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) Excellent DC current gain characteristics. Power dissipation

2SC4174

Abstract: 2SA1572 2SAI611 2SA1584 2SA1609 2SA1613 2sc4118 2SA1568 2SA1571 2SA1573
Contextual Info: - 42 - Ta=25‘iO, *EP(àTc=25'1C M 2SA1568 2SA1571 2SA1572 2SA1573 2SA1574 2SA1575 2SA1576 2SA1577 2SA1579 2SA1580 2SA1581 2SA1582 2SA1584 2SA1585S 2SA1586 2SA1587 2SA1588 2SA1589 2SA1590 2SA1591 2SA1592 2SA1593 2SA1597 2SA1602 2SA1603 2SA1604 2SA1605 2SA1606

2SA1585S

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1585S TRANSISTOR PNP TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PD : 0.4W (Tamb=25℃) Collector current I CM : -2A Collector-base voltage

Contextual Info: Transistors Low-frequency Transistor 20V, 3A 2SD2150/2SC4115S/2SD2264 •Features 1) •External dimensions (Units: mm) LOW VcE(sat). VcE(sai) = 0 . 2 V ( T y p .) ( I c / I b = 2A/Û.1A) 2) Excellent current gain characteris­ tics. 3) Complements the 2SB1424/2SA1585S.

245 transistor

Abstract: ic 245 2SD2150 transistor Ic 1A datasheet NPN 2SA1585S 20V3A 2SC4115 equivalent transistor an 243 npn 2a NPN Silicon Epitaxial Planar Transistor
Contextual Info: Transistors Low Frequency Transistor 20V, 3A 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FExternal dimensions (Units: mm)

2SA1585S

Contextual Info: 2SA1585S 2SA1585S TO-92S TRANSISTOR PNP 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PD : 0.4W (Tamb=25℃) Collector current I CM : -2A Collector-base voltage V(BR)CBO : -20V Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

Contextual Info: 2SB1424 / 2SA1585S Transistors Low VCE sat Transistor (−20V, −3A) 2SB1424 / 2SA1585S zExternal dimensions (Unit : mm) 2SB1424 2SA1585S 4±0.2 1.0±0.2 (1) zStructure Epitaxial planar type PNP silicon transistor 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1

2SA1585

Contextual Info: ST 2SA1585 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into two groups, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g

2SA1585

Abstract: transistor 2SA1585
Contextual Info: ST 2SA1585 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into two groups, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • 2SA1585S 2SA1585S-Q 2SA1585S-R PNP Plastic-Encapsulate Transistors Power dissipation: PD = 0.4W Tamb=25ć