2SB1015 Search Results

2SB1015

Abstract: IC 4025
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1015 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 10.3MAX. FEATURES: . Low Collector Saturation Voltage = VcE sat =-1.7V(Max.) at IC=-3A, IB=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406

2SB1015

Abstract: 2sB1015 y 2SD1406
Contextual Info: Inchange Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Collector power dissipation :PC=25W@TC=25℃ ・Low collector saturation voltage ・Complement to type 2SD1406 APPLICATIONS ・For audio frequency power amplifier

2SB1015

Abstract: 2SD1406
Contextual Info: SavantIC Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier

2SD1406

Abstract: 2SB1015 RL15A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1406 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SB1015 · APPLICATIONS ·For audio frequency power

B1015A

Abstract: B1015 2SB1015A
Contextual Info: 2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit: mm • Low collector saturation voltage: VCE sat = −1.7 V (max) (IC = −3 A, IB = −0.3 A) • Collector power dissipation: PC = 25 W (Tc = 25°C)

9y transistor

Contextual Info: TOSHIBA 2SB1015A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 0 1 5A AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS U nit in mm 10 ± 0.3 M m? T,nw r i n ll p n tn r Si» t u r a fi n n V n l t n erp ' \jlli = _ 1- m 7' V’ Í M 9 Y Ì' ^3.2 ± Q.2

B1015A

Abstract: 2SB1015A B1015
Contextual Info: 2SB1015A 東芝トランジスタ シリコンPNP三重拡散形 2SB1015A ○ 低周波電力増幅用 単位: mm • 飽和電圧が低い。 • コレクタ損失が大きい。 : PC = 25 W Tc = 25°C : VCE (sat) = −1.7 V (最大) (IC = −3 A, IB = −0.3 A)

2sb1015

Abstract: transistor 2sb1015 2SD1406 transistor 2sd1406
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1015 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -1.7 V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1406 APPLICATIONS ·Designed for audio frequency power amplifier applications.

Contextual Info: TO SH IBA 2SB1015 TOSHIBA TRANSISTOR 2 S SILICON PNP TRIPLE DIFFUSED TYPE B 1 0 1 5 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm 10.3MAX. • Low Collector Saturation Voltage : v CE sat = -1 .7 V (Max.) at IC = - 3 A , IB = -0 .3 A • Collector Power Dissipation : P £ = 25W (Tc = 25°C)

2SD1406

Abstract: 2SB1015 25WTc
Contextual Info: Inchange Semiconductor Product Specification 2SD1406 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25℃ ·Low collector saturation voltage ·Complement to type 2SB1015 APPLICATIONS ·For audio frequency power

2SB1015A

Contextual Info: 2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit: mm • Low collector saturation voltage: VCE sat = −1.7 V (max) (IC = −3 A, IB = −0.3 A) · Collector power dissipation: PC = 25 W (Tc = 25°C)

2SB1015

Abstract: 2SD1406 2SB1015-O 2sB101
Contextual Info: V U = ¡> P N P = n íÉ ñ M 2SB1015 2SB1015 : mm 10.3MAX. lâfnsrtTi'i&v'o : V C E (sat) = —1.7V (Ic = —3A, Ib = - 0 .3 A ) : P q = 25W (Tc = 25°C) 2SD1406 t 3 > -/ ') ¿ y i' ') hz * 19 t -te (Ta = 25°C) HO •¡n v-vi 3 l'i' sû y ^ - ; | i l ï

2SB1015A

Contextual Info: T O S H IB A 2SB1015A T O SH IBA TRANSISTO R SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 0 1 5A Unit in mm A U D IO FREQUENCY PO W ER AM PLIFIER APPLICATIO NS • • Low Collector Saturation Voltage : v CE sat = -1 .7 V (Max.) dC = - 3 A, IB = -0 .3 A) : pc = 25 W (Tc = 25°C)

2SD1405

Abstract: 2SA1304 2SA1305 2SA1306 2SA1306A 2SA1306B 2SC3296 2SC3297 2SC3298 2SC3298A
Contextual Info: — 3 O n 8 TO-220 (T S ) P A CK A G E S E R IE S IE M CD l> W H (X) n ✓0 m Application * MAX. A tr 'c Type n o . NPN T V Vertical Out PNP 2SC3298 2SA1306 Audio Drive 2SC3298A 2SA1306A Audio Drive 2SC3298B 2SA1306B General Purpose 2SC3297 2SA1305 2SB1015

2sb1015

Contextual Info: 2SB1015 SILICON PNP TRIPLE DIFFUSED TYPE U nit in mm A U D IO FREQUENCY PO W ER AM PLIFIER APPLICATIONS. • • • I í i ü i I a X. Low Collector Saturation Voltage : V cE sat = —1-VV(Max.) at I c = - 3 A , Ib = -0 .3 A Collector Power Dissipation : P q = 25W(T c = 25°C)

2SB1015

Abstract: 2SD1406
Contextual Info: JMnic Product Specification 2SB1015 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Collector power dissipation :PC=25W@TC=25℃ ・Low collector saturation voltage ・Complement to type 2SD1406 APPLICATIONS ・For audio frequency power amplifier

B1015A

Abstract: 2SB1015A
Contextual Info: 2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit: mm • Low collector saturation voltage: VCE sat = −1.7 V (max) (IC = −3 A, IB = −0.3 A) • Collector power dissipation: PC = 25 W (Tc = 25°C)

Contextual Info: 2SB1015 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)140 I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

2SD1406

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1406 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm 1Û3M AX. FEATURES: 03.2±CX2 . High DC Current Gain : hFg=300 Max. (V^jj= 5V , 1^=0.5A) & idi « r-^1 +* . Low Saturation Voltage •• VCE(sat)=1.0V(Max.)(Ic=3A,

Contextual Info: TOSHIBA íDI SC RE TE /O PT O} 9097250 TO SH IBA lib C D ISCRETE/OPTO * -3 t>U~üT9~¿Tr ' 2SD1406 DE I TDTTaSO □□□ 7141 S I 3 ^ — 0 «jf U SILICON NPN TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm IQ 3MAX, FEATURES:

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB816

Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3