2SB1391 Search Results

2SB1391

Abstract: 2SB791 DSA003644
Contextual Info: 2SB1391 Silicon PNP Triple Diffused ADE-208-871 Z 1st. Edition Sep. 2000 Application Power switching Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter 2 kΩ (Typ) 200 Ω (Typ) 3 2SB1391 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

Contextual Info: 2SB1391 Silicon PNP Triple Diffused HITACHI Application Power switching Outline T O -2 2 0 F M Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^G B O -1 2 0 V Collector to em itter voltage VCEo -1 2 0 V Emitter to base voltage

Hitachi DSA002751

Contextual Info: 2SB1391 Silicon PNP Triple Diffused Application Power switching Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 2 kΩ Typ 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25GC) Item Symbol Ratings Unit Collector to base voltage VCBO –120 V

Contextual Info: 2SB139100MA 2SB139100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB139100MA is a schottky barrier diode chips Ø Due to special schottky barrier structure, the Lb fabricated in silicon epitaxial planar technology; La Ø chips have very low reverse leakage current typical

2SB1391

Abstract: 2SB791
Contextual Info: HITACHI 2SB1391-Silicon PNP Triple Diffused Power Switching Absolute M axim um Ratings Ta = 25°C Hem Symbol Rating Unit Collector to base voltage VCB0 -1 2 0 V Collector to emitter voltage VCE0 -1 2 0 V Emitter to base voltage VEB0 -7 V Collector current

2SB1391

Abstract: 2SB791 Hitachi DSA00385
Contextual Info: 2SB1391 Silicon PNP Triple Diffused Application Power switching Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter 2 kΩ Typ 200 Ω (Typ) 3 2SB1391 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –120

Hitachi DSA002787

Contextual Info: 2SB1391 Silicon PNP Triple Diffused Application Power switching Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter 2 kΩ Typ 200 Ω (Typ) 3 2SB1391 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –120

2SB1391

Contextual Info: SavantIC Semiconductor Product Specification 2SB1391 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION

Contextual Info: 2SB139100MA 2SB139100MA 肖特基二极管芯片 描述 Ø 2SB139100MA是采用硅外延工艺制造的肖特基 二极管芯片； Ø 损耗功率小，效率高； Ø 高ESD能力； Ø 高抗浪涌电流能力； Ø 具有瞬态反应保护能力的保护环结构；

Contextual Info: 2SB1391 Silicon PNP Triple Diffused HITACHI Application P o w e r s w itc h in g Outline T O -2 2 0 F M 2 A 1 . 1 Base |'o 2. C o lle c to r 3. E m itte r 1; 2 3 kQ 200 Q T y p (T yp ) ¿ 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

2SB1391

Contextual Info: Inchange Semiconductor Product Specification 2SB1391 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION

silan

Contextual Info: 2SB139100MA 2SB139100MA SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB139100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø

Contextual Info: i HITACHI 2SB1391-Silicon PNP Triple Diffused Power Switching Absolute Maximum Ratings Ta = 2 5 °Q Item Sym b ol R atin g Unit Collector to base voltage V CBO -120 V Collector to emitter voltage Vcg 0 -1 2 0 V Emitter to base voltage V EB0 -7 V Collector current

2SB536A

Abstract: 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431
Contextual Info: - 2SB 2SB 2SB 2SB 2SB 1321 ^ 1322 ^ 1323 1324 ^ 2SB 2SB 2SB 2SB 2SB 2SB 2SB 1326 1328 1329 , 1330 * 1331 1332 1333 / 2SB 2SB 2SB 2SB 2SB 2SB 1336 1337 1338 1339 1340 1341 *• 2SB 1345 2SB 1346 2SB 1347 SANYO B M TOSHIBA NEC ÏL HITACHI * ± a FUJITSU fâ

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

2SB1391

Abstract: 2SB791
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SB1099

Abstract: 2SB615 nec 2SB1099 2SB886 B676 1086a 1091 2S8834 2sb536 TOSHIBA 2SB613
Contextual Info: 62 - « tt m Type No. € Manuf. a SANYO NEC 2SB601 □—A 2SA1706 2SB 1077 a ti 2SB880 2SB676 2SB 1078 XL 2SB886 2SB673 2SB 1078K xz: 2SB 1080 a a 2SB 1085 □— a 2SB 1085A 2SB 1086 ^ & 2SB632K 2SA962A 2SA1011 2SA968 □— A 2SA1011 □— A 2SA1249 2SB 1Q86A

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

2SB1099

Abstract: 1115a 2sB1098 NEC 2SA1441 2SB873 1116a 2SB927 2SA1770 2SA1283 nec 2SB1099
Contextual Info: - « Type No. tt « Mamif. 2SB 1114 -• 2SB 1115 „ Hi TOSHIBA Z £ MITSUBISHI ZSA1213 2SB10Q1 2SB956 2SB1188 2SB1122 2SA12Q1 2SB1002 2SB766A 2SB1260 2SA1213 2SB1Q02 2SB766A 2SA1315 2SB1059 2SB621A 2SA1283 2SB1459 2SB621A 2SA1283 S S « 2SB 1117 ^ S « 2SB 1118

2SB1370

Abstract: 2SB1376 2sd2083 2sb1383 2SD2012 2SB1369 2SB1371 2SB1372 2SB1373 2SB1375
Contextual Info: - 88 - T a = 2 5 U *EP(âTc=25£C A, ft m S -A. v'cBO VcEO (V) (V) ÍCCDC) (A) n (W) m n ft T (max) ( jw A) (W) (min) uh t (max) (V? te Vce (V) (Ta=25cC ) Ic/I e (A) OEPiitypfil] • BE.\oak/ (max) (V) (V) Ic (A) 1b (A) 2SB1369 □— A G -60 -60 -3 40