2SC1959 Search Results

2SA562TM

Abstract: 2SC1959
Contextual Info: 2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: • 1 watt amplifier application. • Complementary to 2SC1959.

C1959

Contextual Info: MCC TM Micro Commercial Components 2SC1959-O 2SC1959-Y 2SC1959-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Audio frequency low power amplifier applications, driver stage

C1959

Abstract: 2SC1959 c1959 Y transistor c1959 transistor 2SC1959Y
Contextual Info: MCC TM Micro Commercial Components 2SC1959-O 2SC1959-Y 2SC1959-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • x x • Audio frequency low power amplifier applications, driver stage

400 Watt Audio amplifier IC

Abstract: 200 watt audio ic
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1959 Features • • • • • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1959 TRANSISTOR（ NPN ） TO—92 FEATURES Power amplifier applications 1.EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1959 TRANSISTOR（ NPN ） TO—92 FEATURE Power dissipation PCM : 0.5 W（Tamb=25℃） Collector current ICM: 0.5 A Collector-base voltage V BR CBO : 35 V Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1959 TO-92 TRANSISTOR NPN FEATURES z Excellent hFE Linearlity 1.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC1959 Features • • • • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications

2SC1959

Abstract: 2SA562TM 2SA56 2.1 5.1 AUDIO SWITCHING IC ALL TYPE
Contextual Info: 2SC1959 TO SH IBA TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS 2SC1959 Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS • • • . 5.1 MAX. Excellent hjpg Linearity : ^FE (2)-2 5 (Min.) : Vç;e = 6V, Ic = 400mA

2SC1959

Abstract: 2sc1959 transistor
Contextual Info: 2SC1959 2SC1959 TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 35 V V(BR)CBO: Operating and storage junction temperature range 3. BSAE 1 2 3 Tstg: -55℃ to +150℃

2SC1959

Contextual Info: ST 2SC1959 NPN Silicon Epitaxial Planar Transistor for switching, driver stage and audio frequency low power amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be

datasheet 2sc1959

Abstract: 2SC1959
Contextual Info: ST 2SC1959 NPN Silicon Epitaxial Planar Transistor for switching, driver stage and audio frequency low power amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be

2SC1959

Abstract: 2SA562TM
Contextual Info: 2SC1959 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC1959 ○ 低周波小電力増幅用 ○ 励振段増幅用 ○ スイッチング用 単位: mm • 直流電流増幅率の電流依存性が優れています。 •

2SC1959

Abstract: 2SA562TM 400 Watt Audio amplifier IC
Contextual Info: 2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SC1959 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Unit: mm • Excellent hFE linearity : hFE (2) = 25 (min): VCE = 6 V, IC = 400 mA

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC1959 TRANSISTOR NPN 1. EMITTER FEATURES z Excellent hFE Linearity z High Transition Frequency 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

400 Watt Audio amplifier IC

Abstract: 200 watt audio amplifier ic
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1959 Features • • • • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications

2SA572

Abstract: 2SC1006 2SC696 2SC708 2SC984 2SC708A 2SC734 equivalent 2SC680 2SA518 datasheet 2sa564
Contextual Info: Electrical characteristics Ta=25ºC Tj DC Current Gain hFE fab/ft* Cob VCE Ic (ºC) (MHz) (pF) (V) (mA) 175 70 -1 -10 200* 10 40125 -1 -120 >50 8 240 30175 -2 -150 80* 22 300 30175 -2 -150 80* 22 300 40125 -2 -50 100* 20 240 85 300* 1 85 250* 1 85 200* 1

2sc2238

Abstract: 2SD759 2sc1741 2SD401A 2SC1628 2SC1959 2SC2021 2SC1627 2SD1562B 2sc2275
Contextual Info: m Si € Type No. tt « = Manuf. * m NEC B i HITACHI ¡S ± ài FUJITSU ta t MATSUSHITA m h MITSUBISHI □ — A ROHM B ÌL 2SC2911 2SC1628 2SD1609 2SD 758 - l=F TOSHIBA CD SANYO 2SD 757 ^ 2SC2912 2SC1628 2SD1610 2SD 7 5 9 - B Si 2SC2344 2SC2238 2SD4Q1A 2SC1683

2SC1815

Abstract: 2SC 143 SANYO 2SC114 2SC105A 2SC693 2SC1359 C 2SC1398 2sc1740 2SC1359 2SC309
Contextual Info: K tt « Type No. * 2SC 108A * 2 £ $ 2SC 109A M. 2 2SC 1OSA « Manuf. SANYO a b X = TOSHIBA NEC ÌL HITACHI * ± FUJITSU a fé T MATSUSHITA iz 2SC4455 ¡L 2SC3393 2SC 117 a 2SC1398 * 2SC 11« ±L 2SC1398 * * * 2SC 119 Al 2SC 121 * 2SC 122 ' a a a a a 2SC1398

2SD588

Abstract: 2SD427 2SD2006 2SD572 2SC3133 2SC732 2SD586A 2sd573 2SD471 2SC1775
Contextual Info: - a € Type No. a € Manuf. h SANYO n JE 2? TOSHIBA 2SD 565 n B9 B U 2SD 568 a m 2SD1Û61 2SD 569 9 2SD1061 2SD 570 ^ fé T 2SD313 2SD526 2SD 571 b m 2SD863 2SC1627 2SD 558 NEC n 2SD686 a 2SD 560 B B HITACHI ÎL 2SC188KK FUJITSU a fé T MATSUSHITA m h MITSUBISHI

2SC2990

Abstract: a 1232 nec 2SC1216 2SC1681 2sc1324 2sc1741 2SC1173 2sc1239 2SC1959 2SC458A
Contextual Info: - a « T y p e Bo. & £ Manuf. * 2SC 1219 ^ ı il * 2SC 1220 Sftbii * 2SC 1222 0 S * 2SC 1223 3 * 2SC 1224 2SC 1226A tö T fö T * 2SC 1228-'' * ± a * 2SC 1230 «±a * 2SC 1231 ı il ♦ 2SC 1232 Ä Ü S * 2SC 1235 = * * 2SC 1236 * 2SC 1 2 3 7 ^ * 2SC

Contextual Info: NJW1301 SIGNAL PROCESSOR FOR COLOR TFT FOR NTSC •PACKAGE OUTLINE ■GENERAL DESCRIPTION The NJW1301 is a color TFT signal processor for NTSC.It contains Y/C separator circuit, color signal modulator, count down circuit , RGB demodulator , RGB interface , side black

sje transistor

Abstract: 2SC195 2SC1959-Y sft 43 2SC19 2SC1959 9y transistor
Contextual Info: Jo y N P N i& ïs / p m h ^ y s tw p c T jjX .ICON NPN EPITAXIAL TRANSISTOR E L E C T R IC A L C H A R A C T E R IS T IC S x- i s i j S S y * t l L L i e i + M M * 0t l W, n ) ? . * N o te -> i • x ì » y fik /¿A I EBO Ve B= 5V , - - 1.0 hF E l) Vq e= l v .

2sd797

Abstract: 2SD867 2SD2061 2SD425 2SC496 Y 2SD877 2SC496 2sd667 2SC2497 2SC1398
Contextual Info: - §J £ ft T y p e No. * € Manuf. =& SANYO H 2 TOSHIBA 2 Su 136 Äiis ZSD/SI 2SD 196A Ä ±a *±a *±a 2SD797 fô 2SC782 * 2 S D 197 S * 2SD * 2SD 198 * 2 S D 199 $ ' 197A m b NEC 31 HITACHI S ± Ü FUJITSU fâ T MA T S U S H I T A □ — A ROHM 2SD797