2SA131 Search Results

Contextual Info: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Unit: mm Strobe Flash Applications Audio Power Applications • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = －1 V, IC = −4 A)

smd transistor 2A

Abstract: smd transistor MARKING 2A 2SA1314 2SC2982
Contextual Info: Transistors SMD Type Audio Power Applications 2SA1314 Features Low Saturation Voltage : VCE sat = -0.5V (max) (IC = -2A, IB = -50mA) Small Flat Package Complementary to 2SC2982 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter

Contextual Info: 2SA1312 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1312 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) Unit: mm h= 0.95 (typ.) •

u560100

Abstract: 2SA1318 2sc3331 transistor 2SC3331 2sa131
Contextual Info: Ordering number: EN 16 00A 2SA1318/2SC3331 PNP/ NPN Epitaxial Planar Silicon Transistors A F Am p Applications M, ,ár%& Use . Capable of being used in the low frequenoy to high frequency range. Features ♦ Large current oapaeity and wide ASO. : 2SA1318

2SC3312

Abstract: 2SA1310 IC1006
Contextual Info: Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 3.0±0.2 4.0±0.2 • Features Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

Contextual Info: TO SHIBA 2SA1314 2 S A 1 314 TO S H IB A TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO POWER APPLICATIONS 1.6M AX. 4.6MAX. — J- - 1.7M AX. • High DC Current Gain and Excellent Linearity • Low Saturation Voltage

marking ACY

Abstract: marking ACY SOT-23 transistor ACY PNP 2SA1313 2SC3325 aco transistor acy transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1313 SOT-23-3L TRANSISTOR PNP FEATURES z Excellent hFE Linearity : hFE(2) =25(Min)at VCE =-6V,IC=- 400mA. z High Voltage :VCEO=-50V(Min) z Complements the 2SC3325.

2sc3331 transistor

Abstract: 2SA1318 2SC3331 PJ 431
Contextual Info: Ordering number: EN 16 Q 0A N 0.I6O O A ¡I 2SA1318/2SC3331 PNP/ NPN Epitaxial Planar Silicon Transistors SAiYOi AF Amp Applications Use Capable of being used in the low frequency to high frequency range. Features . Large current capacity and wide ASO. : 2SA1318

2SA1317

Abstract: 2SA1348 2SC3331 2sc3345 2SC3398 2SA1313 2SA1314 2SA1315 2SA1316 2SA1319
Contextual Info: - 30 Ta=25°C, * £ P i J T c = 2 5 QC m £ ffl £ ^ VcBO VcEO (V) (V) Ic(DC) (A) Pc* IcBO (max) (W) (W) ( uh) LF A/SW -50 - 50 -0.5 0.15 PA/^hn*' -20 - 10 -2 0. 5 PA/PSW -80 - 80 -2 0.9 2SA1316 SS SS ss ss LF LN A -80 - 80 -0.1 2 S A 1317 ZM LF A - 60

2SC3330

Abstract: 2SA1317 2SA131 Sanyo CV
Contextual Info: Ordering number : EN 1 5 9 9 A 2SA1317/2SC3330 N0.1599A i PNP/ NPN Epitaxial Planar SiliconTransistors SA \YO i AF Amp Applications Use . Capable of being used in the low frequency to high freqency range. Features . Large current capacity and wide ASO. : 2SA1317

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1310 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC3312 Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5

2SA1314

Abstract: 2SC2982
Contextual Info: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Strobe Flash Applications Audio Power Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = −1 V, IC = −4 A)

2SA1314

Abstract: A1314 J-21
Contextual Info: 2SA1314 TO SH IBA 2 S A 1 314 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUD IO PO W ER APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. 0.4 +0.05 High DC Current Gain and Excellent Linearity • V i t /-•X = 1 A O - R O O ( \ T n - n = _ 1 V

2SA1316

Abstract: 2SC3329 X10-5
Contextual Info: 2SA1316 TO SHIBA 2 S A 1 316 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS AND RECOM M ENDED FOR THE FIRST STAGES OF MC HEAD AM PLIFIERS . 5.1 M AX. • Very Low Noise in the Region of Low Signal Source Impedance

2SC3312

Abstract: 2SC331 2SA1310
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 15.6±0.5 • Optimum for high-density mounting

2SA1313

Abstract: 2SC3325 2sA13133
Contextual Info: 2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1313 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

2SA1315

Abstract: 2SC3328 A1315
Contextual Info: 2SA1315 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1315 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)

Contextual Info: 2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1314 Strobe Flash Applications Audio Power Applications • Unit: mm High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.), (VCE = －1 V, IC = −4 A)

Contextual Info: 2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1313 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

2SA1313

Abstract: 2SC3325
Contextual Info: 2SA1313 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1313 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

2SA1310

Abstract: 2SC3312
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3312 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1310 Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5

2SA1318

Contextual Info: 2SA1318 2SA1318 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.2 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: 2SA1318S Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.140 h(FE) Max. Current gain.280

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1317 TO – 92S TRANSISTOR PNP 1. EMITTER FEATURES z Large Current Capacity and Wide ASO 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol