2SC4540 Search Results

2SA1735

Abstract: 2SC4540
Contextual Info: 2SC4540 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4540 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 500 mA)

Contextual Info: SMD Type Product specification 2SA1735 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -500mA) High Speed Switching Time: tstg = 0.25ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4540 Absolute Maximum Ratings Ta = 25

Contextual Info: TO SH IB A 2SC4540 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 POWER SWITCHING APPLICATIONS Low Saturation Voltage : V q e (sat) = 0-5V (Max.) (IC = 500mA) High Speed Switching Time : tgtg= 0.4,«s (Typ.)

2SA1735

Abstract: 2SC4540 005g
Contextual Info: TOSHIBA 2SC4540 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SW ITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V ce (sat)“ 0.5V (Max.) (10 = 500mA) High Speed Switching Time : ^ ^ = 0.4/^ (Typ.)

2SA1735

Abstract: 2SC4540
Contextual Info: TO SH IBA 2SC4540 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 Unit in mm PO W E R A M PLIFIER APPLICATIONS PO W E R SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V c e (sat)“ 0.5V (Max.) (10 = 500mA) High Speed Switching Time : ^ ^ = 0.4/^ (Typ.)

2SA1735

Abstract: 2SC4540
Contextual Info: 2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4540 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 s (typ.)

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4540 U nit 4.6 MAX. o POWER A MPLIFIER APPLICATIONS 1 6 MAX. 0.4 ± 0 .0 5 » POWER SWITCHING APPLICATIONS • Low S a t u r a t i o n V o l t a g e VCE s a t = 0 . 5 V ( M a x . ) ( I c =500mA) • H i g h S p e e d S w i t c h i n g T im e :

smd marking KC

Abstract: smd diode marking KC 2SC4540 2SA1735 marking KC smd marking TF
Contextual Info: Transistors SMD Type Power Switching Applications 2SC4540 Features Low Saturation Voltage: VCE sat = 0.5V (max) (IC = 500mA) High Speed Switching Time: tstg = 0.4ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SA1735

2SA1735

Abstract: 2SC4540
Contextual Info: 2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4540 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 s (typ.)

2SA1735

Abstract: 2SC4540
Contextual Info: 2SC4540 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4540 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 500 mA)

2SA1735

Abstract: 2SC4540
Contextual Info: 2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4540 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) · High speed switching time: tstg = 0.4 µs (typ.)

2SA1735

Abstract: marking LC 2SC4540
Contextual Info: Transistors SMD Type Power Switching Applications 2SA1735 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -500mA) High Speed Switching Time: tstg = 0.25ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4540

2SA1735

Abstract: 2SC4540
Contextual Info: TO SH IBA 2SC4540 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4540 Unit in mm PO W E R A M PLIFIER APPLICATIONS PO W E R SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V c e (sat)“ 0.5V (Max.) (10 = 500mA) High Speed Switching Time : ^ ^ = 0.4/^ (Typ.)

2SA1735

Abstract: 2SC4540
Contextual Info: 2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4540 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 µs (typ.)

2SA1735

Abstract: 2SC4540
Contextual Info: 2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4540 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 µs (typ.)

Contextual Info: 2SA1735 SILICON PNP EPITAXIAL T Y P E Unit in mm 4.6MAX . ] 7MAX. » POWER AMPLIFIER APPLICATIONS » POWER SWITCHING APPLICAGIONS Low Saturation Voltage : VcE sat =-0.5V(Max.) (Ic=-500mA) High Speed Switching Time: tstg=0. 2 5 |J S (Typ.) Small Flat Package

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SA1735

Abstract: 2SC4540
Contextual Info: 2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1735 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) • High speed switching time: tstg = 0.25 µs (typ.)

2SA1735

Abstract: 2SC4540
Contextual Info: 2SA1735 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1735 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −500 mA)

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

Contextual Info: 2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1735 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) • High speed switching time: tstg = 0.25 µs (typ.)

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2SA1735

Abstract: 2SC4540
Contextual Info: TO SHIBA 2SA1735 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 735 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SW ITCHING APPLICATIONS 1.6MAX — j- 4.6MAX. 1.7MAX. Low Saturation Voltage 0.4 + 0.05 : VCE (sat)= —0.5V (Max.) (Iq = —500mA)