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    2SD1755 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1755 Panasonic Silicon NPN epitaxial planar type Original PDF
    2SD1755 Panasonic NPN Transistor Original PDF
    2SD1755 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1755 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1755 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1755 Panasonic Silicon NPN Epitaxial Planar Type Power Transistors Scan PDF
    2SD1755 ROHM TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Scan PDF
    2SD1755P Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF

    2SD1755 Datasheets Context Search

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    2SD1755

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1755 Silicon NPN epitaxial planar type Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1 4.6±0.4 Parameter Symbol Rating Unit


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    PDF 2002/95/EC) 2SD1755 2SD1755

    2SD1755

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1755 Silicon NPN epitaxial planar type Unit: mm 7.0±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ Collector-base voltage (Emitter open)


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    PDF 2002/95/EC) 2SD1755 2SD1755

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1755 Silicon NPN epitaxial planar type Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 100 V Collector-emitter voltage (Base open)


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    PDF 2002/95/EC) 2SD1755

    2SD1755

    Abstract: No abstract text available
    Text: Power Transistors 2SD1755 Silicon NPN epitaxial planar type Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1 4.6±0.4 Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 100 V Collector-emitter voltage (Base open)


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    PDF 2SD1755 10alues, 2SD1755

    2SD1755

    Abstract: No abstract text available
    Text: Power Transistors 2SD1755 Silicon NPN epitaxial planar type Unit: mm 7.0±0.3 For power amplification with high forward current transfer ratio • Absolute Maximum Ratings +0.3 1.0±0.2 10.0 –0. High forward current transfer ratio hFE which has satisfactory


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    PDF 2SD1755 2SD1755

    2SD1755

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1755 Silicon NPN epitaxial planar type Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1 4.6±0.4 Parameter Symbol Rating Unit


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    PDF 2002/95/EC) 2SD1755 2SD1755

    Untitled

    Abstract: No abstract text available
    Text: 2SD1755 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)6 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)0.5 @I(C) (A) (Test Condition)100m


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    PDF 2SD1755 Freq50MÃ

    2SD1755

    Abstract: ic106 ic max 232
    Text: Power Transistors 2SD1755 Silicon NPN epitaxial planar type Unit: mm 7.0±0.3 For power amplification with high forward current transfer ratio • Absolute Maximum Ratings +0.3 1.0±0.2 10.0 –0. High forward current transfer ratio hFE which has satisfactory


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    PDF 2SD1755 2SD1755 ic106 ic max 232

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    2SD1755

    Abstract: No abstract text available
    Text: Power Transistors 2SD1755 2SD1755 Silicon NPN Epitaxial Planar Type High DC C urrent Gain Package D im ensions Pow er A m plifier Ii f e , Unit ! mn • Features • H ig h D C c u r r e n t g ain (Ii f e ) • G o o d lin e a r it y o f D C c u r r e n t g ain (h re )


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    PDF 2SD1755 2SD1747/A) 2SD1755

    2SD1755

    Abstract: VUO60
    Text: Power Transistors 2SD1755 2S D 1755 Silicon NPN Epitaxial Planar Type Package D im ensions High DC C urrent Gain hFE , Pow er A m plifier U n i t ! mm • Features • High DC current gain 3.7 max 7 .3 ma x. (I i f e ) 3 .2 m a x. 0. 9 ± 0 . 1 0.5max. • Good linearity of DC current gain (htE)


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    PDF 2SD1755 2SD1747/A) 2SD1755 VUO60

    2SD2334

    Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
    Text: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187


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    PDF 2SD2174 2SD2175 2SD2176 2SD2177 2SD2185 2SD2186 2SD2187 2SD2188 2SD2189 2SD2190 2SD2334 2sc4814 2SD2076 2216y 2SD1546 2SD1930 2SD1755 2sc2562 2SC4062

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


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    PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526

    2SC5072

    Abstract: 2SC4698 4685 4686 2SC470-3 2SC4703 4670K 2SC4001 2SC4176 2SC4443
    Text: - 196 - m s T y p e No. 2 SC 4666 tt « Manuf. J z B m SANYO TOSHIBA K S. 2SC 4667 Ä S. 2SC4443 2SC 4668 S tB ä 2SC4523 2SD1412 » S tc 2SC4406 2SC4250 2SC 4669 > fö T 2SC 4670 2SC 4671 / = 2SC 4672 □— A = 2SC 4674 B 4 "" # 2SC 4678 ÜL S. 2SC 4679


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    PDF 2SC4181 2SD1823 2SD2351 2SC4443 2SC4176 2SD1977 2SC4700 2SC4523 2SD1412 2SD1747 2SC5072 2SC4698 4685 4686 2SC470-3 2SC4703 4670K 2SC4001 2SC4176 2SC4443

    B1548

    Abstract: 2SB1299A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200


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    PDF T0-220 O-220F 2SB954/A 2SB1052 2SD1480 2SD1265/A O-220E T0220D 2SB1169/A 2SB1170 B1548 2SB1299A

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


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    PDF 2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A

    2sd2520

    Abstract: 2SD2501 2SD2502 2sD2503 2SD1327 2SD1755
    Text: Transistors Selection Guide by Applications and Functions •Silicon Power Transistors (continued) Applica­ tion Func­ tions V ceo (V) lc (A) Package (No.) VcE(sat) typ. (V) lc Ib TO-220(a) (D52) T0-220F(D55) T0-220E(D59) T0-220D(D58) N Type (D42) PNP


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    PDF O-220 T0-220F T0-220E T0-220D 2SD1719 2SD1775/A 2SD1755 2SB1195 2SD1634 2SD1336/A 2sd2520 2SD2501 2SD2502 2sD2503 2SD1327 2SD1755

    2SD2502

    Abstract: 2sd2520 2sD2503 2SD2375 2SD1755 zener 3,5 2SD1474 2SD1719 2SD2158 T0-220F
    Text: Transistors Selection Guide by Applications and Functions • Silicon Pow er T ransistors (continued) Applica­ V ceo tion Func­ (V) tions Pa ckage (No.) VcE(sat) lc (A) typ. (V) lc Ib T0-220(a) (D56) (A) (mA) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )


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    PDF T0-220 T0-220F T0-220E T0220D 2SD1474 2SD1719 2SD1755 2SD1776/A 2SD1775/A 2SD2158 2SD2502 2sd2520 2sD2503 2SD2375 2SD1755 zener 3,5 2SD1474 2SD1719 2SD2158

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


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    PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    2SD1555

    Abstract: 2SB1833 2SD1876 2SD1878 2SD772 nec 2sc2562 2SD1406 2SD1546 ZSD15 2SD1548
    Text: - Si € Type No. 2SD 18S3^-2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2S0 1584 *•" 1885 ^ 1886 y 1887 ^ 1888 , 1889 / 1890 ^ 1891 1892 1896 189? 1898 * 2SD 2SD 2SD 2SD 2SD 2S0 2SD 2SD 1899 ~ 1899-Z 1900 1901 1902 „ 1903 * 1904 J 1905 ^ 2SD 2SD 2S0 2S0


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    PDF 2SD1883 1899-Z 2SD1544 2SD1545 2SD1546 2SD1547 2SD1548 2SD2293 2SD2295 2SD2298 2SD1555 2SB1833 2SD1876 2SD1878 2SD772 nec 2sc2562 2SD1406 ZSD15 2SD1548

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors (continued) Applica­ V ceo tion Func­ (V) tions High hre lc (A) Pa ckage (No.) VcE(sat) typ. (V) lc Ib (A) (mA) T0-220(a) (D56) NPN T 0 -2 2 0 F (D 5 9 ) T 0 -2 2 0 E (D 6 3 )


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    PDF T0-220 2SD1474 2SD1776/A 2SD2158 2SD1775/A 2SD1719 2SD1336/A 2SB1108 2SB1193 2SD1608

    D1274A

    Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
    Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691


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    PDF 2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398