2SD1606
Abstract: DSA003645
Text: 2SD1606 Silicon NPN Triple Diffused ADE-208-915 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter ID 2.6 kΩ (Typ) 160 Ω (Typ) 3 2SD1606 Absolute Maximum Ratings (Ta = 25°C)
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2SD1606
ADE-208-915
O-220AB
2SD1606
DSA003645
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2SB1106
Abstract: 2SD1606 2SB110
Text: Inchange Semiconductor Product Specification 2SB1106 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Complement to type 2SD1606 APPLICATIONS ・Designed for use in low frequency power amplifier applications
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2SB1106
O-220C
2SD1606
-60mA
-120V,
-100V,
2SB1106
2SD1606
2SB110
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2SB1106
Abstract: 2SD1606
Text: JMnic Product Specification 2SB1106 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Complement to type 2SD1606 APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING
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2SB1106
O-220C
2SD1606
-60mA
-120V,
-100V,
2SB1106
2SD1606
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Hitachi DSA00279
Abstract: No abstract text available
Text: 2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter ID 2.6 kΩ (Typ) 160 Ω (Typ) 3 2SD1606 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage
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2SD1606
O-220AB
D-85622
Hitachi DSA00279
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Hitachi DSA00276
Abstract: No abstract text available
Text: 2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter ID 2.6 kΩ (Typ) 160 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage
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2SD1606
O-220AB
D-85622
Hitachi DSA00276
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2SD1606
Abstract: DSA003718
Text: 2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter ID 2.6 kΩ (Typ) 160 Ω (Typ) 3 2SD1606 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage
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2SD1606
O-220AB
2SD1606
DSA003718
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2SB1106
Abstract: 2SD1606
Text: SavantIC Semiconductor Product Specification 2SB1106 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC durrent gain ·Complement to type 2SD1606 APPLICATIONS ·Designed for use in low frequency power amplifier applications
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2SB1106
O-220C
2SD1606
-60mA
-120V,
-100V,
2SB1106
2SD1606
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2SD1606
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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D-85622
2SD1606
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7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver
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2sc4537
2sc454.
2sc4591
2sc4592
2sc4593
2sc460.
2sc4628
2sc4629
2sc4643
2sc4680
7054F
BC564A
HA13563
AC123A
HITACHI microcontroller H8 534 manual
IC 74LS47
AC538
BC245A
2SK3235
HA13557
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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D-85622
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2SD1606
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
2SD1606
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2SC5998"
C5139
2SC5247
2SC5907
2SD1504
2SJ361
2SK439
2SK494
2SK3349
BCR5KM-12L
1002ds
6020v4
TRANSISTOR BJ 131-6
2SC 8550
transistor 2sc1417
HITACHI 08122B
transistor h945
6030v4
2SC 8050
25aaj
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
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Untitled
Abstract: No abstract text available
Text: HITACHI 2 S 1 D 6 6 SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY PO W ER AMPLIFIER I. Ba>c 2 Cmkcim IH a n g e .1 . r.miuer 1> iir> e n sK m ç in m m j (JEOEC TO-22QAB) • ABSOLUTE MAXIMUM RATINGS (Ta=25X) Item S) Ix l 2SD1606 MAXIMUM COLLECTOR DISSIPATION
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O-22QAB)
2SD1606
2SDI606
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2sb1099
Abstract: 2SB1100 2sd1593 2SD1594 2SD1617 LFPA 2SD1591 2SD1595 2SD1583-Z 2SD1584
Text: - 256 - i+ 2SD1583-Z 2SD1584 2SD1584-Z 2SD1585 2SD1586 2SD1587 2SD1588 2SD1589 2SD159Q 2SD1591 2SD1592 2SD1593 2SD1594 2SD1595 i?nicfiT b'jui'j a i 2SD1599 2SD1600 2SD1601 2SD1602 2SD1603 2SD1604 2SD1605 2SD1606 2SD1608 2SD1609 2SD1610 2SD1611 2SD1614 2SD1615
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2SD1583-Z
2SD1584
2SD1584-Z
2SD1585
2SD1586
2SD1587
2SD1588
T0-220ABJFJ
2SD1606
2SB1108
2sb1099
2SB1100
2sd1593
2SD1594
2SD1617
LFPA
2SD1591
2SD1595
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Untitled
Abstract: No abstract text available
Text: 2SD1606 Silicon NPN Triple Diffused HITACHI Application Low frequency pow er am plifier Outline TO -220AB Absolute M aximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage ^CBO 120 V Collector to emitter voltage VCEQ 120 V Emitter to base voltage
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2SD1606
-220AB
2SD1606_
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Untitled
Abstract: No abstract text available
Text: 2SD1606 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220A B 2 • ■ M[ |[ W1 1 2 1. Base 2. C ollector Flange 3. Emitter ( 'o 2.6 kQ (Typ) 1 60 Q (Typ) ¿ 3 Absolute Maximum Ratings (Ta 25 °C) = Item Symbol
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2SD1606
-220A
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2SD1606
Abstract: No abstract text available
Text: HITACHI 2SD1606-SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER I. Il:i5c 2 Collector tllrtSt 3- I'miiter (Dim ensions in mm) (JEDEC TO-220AB} • ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item Symbol MAXIMUM COLLECTOR DISSIPATION CURVE Unit 2SD1606
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2SD1606-
O-220AB}
2SD1606
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Untitled
Abstract: No abstract text available
Text: 2SD2112 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 2SD2112 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O 120 V Collector to em itter voltage VcEO 120 V Emitter to base voltage
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2SD2112
O-220FM
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Untitled
Abstract: No abstract text available
Text: 2SD2112 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM n 1 2 3 2 1. Base 2. C ollector 3. Emitter 1^ 1^ 2.6 kQ. Typ [1 160 Q. (Typ) ¿ 3 ¡t'D 2SD2112 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating
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2SD2112
-220FM
2SD1606.
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sk
Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Text: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k
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2SD16
2SD1603
2SD1604
2SD1605
2SD1606
2SD1756
2SD1976
2SB1389
2SB1390
2SB1391
transistor 2sk
transistor sp-10 4ac14
2SK157
transistor 2sk 70
2sj318
transistor 2sk 12
2SK2851
4AC14
TRANSISTOR 2sK 135
K 2796
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