2SD1606 Search Results

2SD1606

Abstract: DSA003645
Contextual Info: 2SD1606 Silicon NPN Triple Diffused ADE-208-915 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter ID 2.6 kΩ (Typ) 160 Ω (Typ) 3 2SD1606 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SD1606 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline T O -2 2 Q A B 3 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^GBO 120 V Collector to em itter voltage VCEo 120 V Emitter to base voltage

2SB1106

Abstract: 2SD1606 2SB110
Contextual Info: Inchange Semiconductor Product Specification 2SB1106 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Complement to type 2SD1606 APPLICATIONS ・Designed for use in low frequency power amplifier applications

Contextual Info: HITACHI 2 S 1 D 6 6 SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY PO W ER AMPLIFIER I. Ba>c 2 Cmkcim IH a n g e .1 . r.miuer 1> iir> e n sK m ç in m m j (JEOEC TO-22QAB) • ABSOLUTE MAXIMUM RATINGS (Ta=25X) Item S) Ix l 2SD1606 MAXIMUM COLLECTOR DISSIPATION

2SB1106

Abstract: 2SD1606
Contextual Info: JMnic Product Specification 2SB1106 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Complement to type 2SD1606 APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING

Hitachi DSA00279

Contextual Info: 2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter ID 2.6 kΩ (Typ) 160 Ω (Typ) 3 2SD1606 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

2sb1099

Abstract: 2SB1100 2sd1593 2SD1594 2SD1617 LFPA 2SD1591 2SD1595 2SD1583-Z 2SD1584
Contextual Info: - 256 - i+ 2SD1583-Z 2SD1584 2SD1584-Z 2SD1585 2SD1586 2SD1587 2SD1588 2SD1589 2SD159Q 2SD1591 2SD1592 2SD1593 2SD1594 2SD1595 i?nicfiT b'jui'j a i 2SD1599 2SD1600 2SD1601 2SD1602 2SD1603 2SD1604 2SD1605 2SD1606 2SD1608 2SD1609 2SD1610 2SD1611 2SD1614 2SD1615

Contextual Info: 2SD1606 Silicon NPN Triple Diffused HITACHI Application Low frequency pow er am plifier Outline TO -220AB Absolute M aximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage ^CBO 120 V Collector to emitter voltage VCEQ 120 V Emitter to base voltage

Hitachi DSA00276

Contextual Info: 2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter ID 2.6 kΩ (Typ) 160 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

2SD1606

Abstract: DSA003718
Contextual Info: 2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter ID 2.6 kΩ (Typ) 160 Ω (Typ) 3 2SD1606 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

Contextual Info: 2SD1606 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220A B 2 • ■ M[ |[ W1 1 2 1. Base 2. C ollector Flange 3. Emitter ( 'o 2.6 kQ (Typ) 1 60 Q (Typ) ¿ 3 Absolute Maximum Ratings (Ta 25 °C) = Item Symbol

2SB1106

Abstract: 2SD1606
Contextual Info: SavantIC Semiconductor Product Specification 2SB1106 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC durrent gain ·Complement to type 2SD1606 APPLICATIONS ·Designed for use in low frequency power amplifier applications

2SD1606

Contextual Info: HITACHI 2SD1606-SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER I. Il:i5c 2 Collector tllrtSt 3- I'miiter (Dim ensions in mm) (JEDEC TO-220AB} • ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item Symbol MAXIMUM COLLECTOR DISSIPATION CURVE Unit 2SD1606

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Contextual Info: 2SD2112 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM n 1 2 3 2 1. Base 2. C ollector 3. Emitter 1^ 1^ 2.6 kQ. Typ [1 160 Q. (Typ) ¿ 3 ¡t'D 2SD2112 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating

2SD1606

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SD1606

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

transistor 2sk

Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Contextual Info: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k