2SD1667 Search Results

2SD1667

Abstract: 2SB1134
Contextual Info: Inchange Semiconductor Product Specification 2SD1667 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1134 ・Low collector saturation voltage APPLICATIONS ・Relay drivers,high-speed inverters,and other general high-current switching applications

2SB1134

Contextual Info: Ordering number:2091B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1134/2SD1667 50V/5A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, and other general high-current switching applications. unit:mm 2041A [2SB1134/2SD1667]

te 1819

Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
Contextual Info: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =

SC-62

Abstract: 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 2SD1668 2SD1669
Contextual Info: - 260 - Ta=25<C , *EPfàTc=25‘ C m 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 s tt j s s fô T O—A n —A D —A 3$ rn « Œ VCBO «CEO (V) (V) PSW 100 PSW 1500 100 Pc Pc* (A) (W) (W) »CBO unax; UA) 100 15 5 n m « ÌC(DC) , V'CB (V)

2SB1134

Abstract: 2SD1667
Contextual Info: Ordering number:ENN2091B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1134/2SD1667 50V/5A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, and other general high-current switching applications. unit:mm 2041A

2SB1134

Abstract: 2SD1667
Contextual Info: JMnic Product Specification 2SB1134 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1667 ・Low collector saturation voltage APPLICATIONS ・Relay drivers,high-speed inverters and other general high-current switching applications

2SD1667

Abstract: 2SB1134 R10C
Contextual Info: SavantIC Semiconductor Product Specification 2SD1667 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1134 ·Low collector saturation voltage APPLICATIONS ·Relay drivers,high-speed inverters,and other general high-current switching applications

2091B

Abstract: 2sb1134
Contextual Info: Ordering number:2091B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1134/2SD1667 50V/5A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, and other general high-current switching applications. unit:mm 2041A [2SB1134/2SD1667]

Contextual Info: 2SD1667 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SD1667R Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SB1134

Abstract: 2SD1667 transistor 2sb1134
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1134 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max.)@ IC= -3A ·Complement to Type 2SD1667

2SB1134

Abstract: 2SD1667 2sb113
Contextual Info: Inchange Semiconductor Product Specification 2SB1134 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1667 ・Low collector saturation voltage APPLICATIONS ・Relay drivers,high-speed inverters and other general high-current switching applications

2SB1134

Abstract: 2SD1667
Contextual Info: SavantIC Semiconductor Product Specification 2SB1134 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD1667 ·Low collector saturation voltage APPLICATIONS ·Relay drivers,high-speed inverters and other general high-current switching applications

2SB1134

Abstract: 2SD1667 to220ml
Contextual Info: 2SB1134 / 2SD1667 Ordering number : EN2091D SANYO Semiconductors DATA SHEET 2SB1134 / 2SD1667 PNP / NPN Epitaxial Planar Silicon Transistors 50V/5A Switching Applications Applications • Relay drivers, high-speed inverters, and other general high-current switching applications

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Sanyo audio amplifier

Abstract: a671hn DIP28H LA4919N Sanyo pre amplifier sanyo capacitor 1000uf 6.3V BTL POWER AMPLIFIER 2-channel block diagram headphone
Contextual Info: Ordering number : ENA0323 Monolithic Linear IC LA4919N Two-Channel 10W BTL High-Efficiency TV Audio Output Power Amplifier Overview The LA4919N is a 2-channel 10W BTL high-efficiency power amplifier. By using a signal following switching system for the power supply to the amplifier output stage and by including a nonlinear amplifier in the signal system, the LA4919N

Contextual Info: Continued from previous page Electrical characteristics T a = 25 t Absolute m uknum ratings hreevcEic VC Blnt) nux 0 1C • IB Type No. type AppRcatloas VCBO (V ) VCEO M 1C (A ) PC (W ) (8 > VCE(ul) max GnV) 1C (A ) IB (m A) hFE VCE (V ) frevcE-ic 1C (A )

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

transistor B1202

Abstract: 2SD1802 b1202 t 2SB1202S
Contextual Info: Ordering number : EN2113E 2SB1202/2SD1802 Bipolar Transistor http://onsemi.com – 50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • • • Large current capacitance and wide ASO

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SB1203

Abstract: 2044B 2SD1803
Contextual Info: Ordering number:ENN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications Package Dimensions Æ Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

2SD313

Abstract: transistor 2sC3781 2SD1159 2sa128
Contextual Info: SAUYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s * Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device *More collector dissipation available when a device alone is used

LA4905 equivalent

Contextual Info: Ordering number : EN5504 Monolithic Linear 1C LA4905 No. 5504 17-W, 2-Channel BTL AF High-Efficiency Power Amplifier for Car Stereo Systems Overview Package Dimensions The LA4905 is a BTL 2-channel power amplifier IC for use in car audio systems. Increases in the number of

SB145

Abstract: 2sd1159 hc/2SB824 transistor 2sb507 sanyo 2Sd1666 2sa128 2SB824 transistor 2sd313
Contextual Info: SAfíYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s ♦ Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device ♦ More collector dissipation available when a device alone is used