2SD1858 Search Results

2SD1225M

Abstract: 2SD1225M Q TRANSISTORS sec 537 2SD1858 2SB909M 2sd1225 T2721 2SB1237 DU 9
Contextual Info: 2SD1225M/2SD1858 £ / J ransistors h 7 > v ROHM CO LTD 4 2S D 1225M 2S D 1858 T> m É S a 3 S a • R H v ' J a > h 7 > v X N ^ 4 , ^JiMlîlffl/M edium Power Amp. 7^27-2 ] Epitaxial Planar NPN Silicon Transistors VhMVlV’J i-r • WM■^■^0/Dimensions Unit : mm

Contextual Info: N ~7 > y 7 $ /Transistors 2SD1225M/2SD1858 '> 7 ^ 7 ° U - : J - B N P N y 'J=]> h 7 > y ^ ^ 2SD1225M 4i f,Bc 02^ 7* iillliffl/M e d iu m Power Amp. 2SD1858 Epitaxial Planar N PN Silicon Transistors SO- >4 VT.\' vjl - 7- • y |- fj\r > S 0 /D |m n s|or>s U n it: mm)

2SD1858

Abstract: 2SB1132 2SB1237 2SD1664 T100 rohm 2sd1664
Contextual Info: Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 Dimensions (Unit : mm) 2SD1664 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 3.0 + − 0.2 0.4+0.1 −0.05 0.65Max. 0.4 + − 0.1 1.5 + − 0.1 0.5 + − 0.1 (1) (2) (3) 2.54 2.54 Abbreviated symbol: DA∗

transistor Ic 1A datasheet NPN

Abstract: 2SD1858 2SD1664 NPN Silicon Epitaxial Planar Transistor Transistor d12 Transistor 2SD1858 2SB1237 2sb123 NPN Transistor Characteristics Silicon NPN Epitaxial Planar Power Transistor
Contextual Info: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

Contextual Info: Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 Dimensions (Unit : mm) 2SD1664 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 3.0 + − 0.2 0.4+0.1 −0.05 0.65Max. 0.4 + − 0.1 1.5 + − 0.1 0.5 + − 0.1 (1) (2) (3) 2.54 2.54 Abbreviated symbol: DA∗

2SB1237

Abstract: 2SD1858 Transistor 2SD1858
Contextual Info: Medium Power Transistor 32V, 1A 2SD1858 Dimensions (Unit : mm) Features 1) Low VCE(sat) = 0.15V(Typ.) (lC / lB = 500mA / 50mA) 2) Compliments 2SB1237 2.5 + − 0.2 0.9 4.4 + − 0.2 6.8 + − 0.2 0.5 + − 0.1 (1) (2) 14.5 + − 0.5 1.0 Structure

2SB1132

Abstract: 2SB1237 2SA1515S 2SD1858 transistor pnp 1a 2sB1237 transistor "Power transistor" data sheet transistor PNP 2SD1664 2SB1132 transistor
Contextual Info: Transistors Medium Power Transistor *32V, *1A 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FExternal dimensions (Units: mm) FStructure Epitaxial planar type

2SD1858

Abstract: 2SB1132 2SB1237 2SD1664
Contextual Info: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

Transistor 2SD1858

Contextual Info: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 •F e a tu re s 1) (Ic / I b 2) • E x te r n a l dim ensions (Units: mm) Low VcE(sat) = 0.15V (typical). 2SD1664 2SD1858 = 5 0 0 m A /5 0 m A ) 6 .8 ± 0 2 C om plem ents the e+ 0 .2 5-0.1

Contextual Info: Transistors Medium Power Transistor *32V, *1A 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FExternal dimensions (Units: mm) FStructure Epitaxial planar type

2SD1858

Abstract: Transistor 2SD1858
Contextual Info: 2SD1858 Transistor, NPN Features Dimensions Units : mm • available in ATV TV2 package • • large power in a compact package: Pc = l W low collector saturation voltage, typically V CE(sat) = 0.15 V at Iq/I b = 500 mA/50 mA • complementary pair with 2SB1237

2SB1237

Abstract: 2sB1237 transistor 2sb transistor Transistor 2SD1858
Contextual Info: 2SB1237 Transistor, PNP Features • available in ATV TV2 package • high power: Pq = 1W • low collector saturation voltage, typically VCE sat = -0.2 V at lc/lB = -500 mA/-50 mA • complementary pair with 2SD1858 Applications • medium power amplifier

2SD1225

Abstract: b 1237 ltlc
Contextual Info: N "7 > y £ 2SD1225M/2SD1858 /T r a n s is to r s 2SD1225M 2SD1858 • x t ° 2 * y 7 ^ 7 ‘ U - :H fê N P N y V 3 > b 7 > y Z $ Epitaxial Planar NPN Silicon Transistors ^ t f ^Jiltëlffl/M edium Power Amp. • ^ i-Jfi^ iiE l/D im en sio n s Unit : mm

ATIC 59 C1

Abstract: e01n
Contextual Info: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Low VcE(sat) = 0.15V (typical). (I c / I b = 500m A/50m A) 2) Complements the 2SB 1132/2SB1237. •S tru ctu re Epitaxial planar type

Contextual Info: 2SB1237 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA MEDIUM POWER TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR Features. * Low VCE,;^, , VCE^ggjj =-0.2V Typ.) (Ic/Ib=-500mA/-50mA) * Complement to 2SD1858 ABSOLUTE M AXIMUM RATINGS at Tinr*=25°C

9578

Abstract: MODEL Q2SD1858 NPN 2SD1858 model Q2SD1858 2SD1858 TR 104
Contextual Info: SPICE PARAMETER 2SD1858 by ROHM TR Div. * 2SD1858 NPN BJT model * Date: 2006/11/15 .MODEL 2SD1858 NPN + IS=82.625E-15 + BF=169.40 + VAF=100 + IKF=9.9578 + ISE=82.625E-15 + NE=1.3933 + BR=12.165 + VAR=100 + IKR=14.121 + ISC=202.30E-15 + NC=2.6727 + RE=.1

Contextual Info: 2SD1858 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.82 h(FE) Max. Current gain.390

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB1232

Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Contextual Info: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004

2sb1237

Contextual Info: ROHM 4GE CO L T D D • TflS ûW |Q 9 M S B1RHI1 2SB909M/2SB1237 7 = 2 7 -2 J h 7 > V ^ 5 / T ransistors " 2S! DÜ QS S 0 3 1 77 ^ ^ U“ ^ PNP V U a > K 7 > V 7 ^ /M edium Power Amp. Epitaxial Planar PNP Silicon Transistors ' ÿ f-J f^ ^ H /D im e n s io n s Unit : mm

2SB909M

Abstract: 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2SA1548 2Sc4776 2SB1130
Contextual Info: ATR • ATV Approximately the same size as the TO -92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package , VcEO V ATV ATR A pplication ^VcES ^ V c E R Part No. - 2SA937AMLN L ow Noise 2SA937AM Pre Am p

2SB1237

Abstract: TRansistor 2SB1237 data 2SA1515S 2SD1858 SC-72
Contextual Info: Medium Power Transistor 32V,1A 2SA1515S / 2SB1237 Dimensions (Unit : mm) 2.5 + − 0.2 6.8 + − 0.2 0.9 3Min. 3+ − 0.2 (15Min.) Structure Epitaxial planar type PNP silicon transistor 2SB1237 2+ − 0.2 0.45 +0.15 −0.05 2.5 +0.4 −0.1

2SB1237

Abstract: 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100 2SB1132-QR
Contextual Info: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)