2SK106 Search Results

s2e transistor

Abstract: S2E MARKING cp 035 sanyo vds5 2SK242 2SK1065
Contextual Info: SANYO S E M I C O N D U C T O R 2SK1065 TTTTOTb ÜOOhTb? 2 SSE D CORP T - 3 1 ‘2 5 # N-Channel'Junction Silicon FET 2057 High-Frequency General-Purpose Amp Applications 2746 Features • Very small-sized package permitting 2SK1065-applied sets to be made smaller and slimmer

2SJ167

Abstract: 2SK1061 2sk106
Contextual Info: 2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching times: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)

2SK1069

Abstract: 2SK771 2SK77
Contextual Info: Ordering number:EN2749 N-Channel Junction Silicon FET 2SK1069 Low-Frequency General-Purpose Amplifier Applications Package Dimensions unit:mm 2058 [2SK1069] 0.425 • Low-frequency general-purpose amplifiers. · Ideal for use in variable resistors, analog switches,

Contextual Info: TOSHIBA 2SK1061 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 061 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4.2M AX NTERFACE APPLICATIONS Excellent Switching Times ton = 14ns Typ. High Forward Transfer Admittance |Yfs| = lOOmS (Min.)

Contextual Info: TOSHIBA 2SK1062 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 062 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance

Contextual Info: 2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching times: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)

2sk 100a

Abstract: 2SK1063
Contextual Info: 2SK1063,2SK1064blE » • MMÌbEOS G Ü 13173 T 3 T SILICON N-CHANNEL MOS F E T IH I T 4 HITACHI/ OPTOELECTRONICS HIGH SPEED POWER SWITCHING 1. Gate 2. Source 3. Drain (C ase) (Dimensions in nun) (JE D E C T O -3 ) IABSOLUTE MAXIMUM RATINGS (To=25°C) Ite m

2SJ168

Abstract: 2SK1062 1318F
Contextual Info: TOSHIBA 2SK1062 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE 2 S K 1 062 Unit in mm HIGH SPEED SWITCHING APPLICATIONS + 0.5 2.5-0.3 + 0.25 1.5-0.15 ANALO G SWITCHING APPLICATIONS INTERFACE APPLICATIONS Excellent Sw itching Time : ton = 14 ns Typ.

EN2747

Abstract: 2SK1066 2SK436 2SK43
Contextual Info: Ordering number:EN2747 N-Channel Junction Silicon FET 2SK1066 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • High-frequency general-purpose amplifier. · AM tuner RF amplifier. · Low-noise amplifier. unit:mm 2058

Toshiba 2SJ

Contextual Info: 2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching times: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)

2SK1069

Abstract: 2SK771 ITR01021 ITR01022 ITR01023 ITR01024 ITR01025 ITR01026 ITR01027
Contextual Info: 注文コード No. N 2 7 4 9 2SK1069 No. N2749 83199 2SK1069 用途 N チャネル接合形シリコン電界効果トランジスタ 低周波一般増幅用 ・低周波一般増幅用。 ・可変抵抗器 , アナログスイッチ , 低周波増幅 , 定電流用として最適である。

Contextual Info: 2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Analog Switching Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 ms (min)

Contextual Info: 2SK1060 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)

Contextual Info: TOSHIBA 2SK1062 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE niiinfi? Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance

2SJ168

Abstract: 2SK1062
Contextual Info: 2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Analog Switching Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 ms (min)

27481

Contextual Info: |~Ord e rin g n u m b e - : E N 2 7 4 8 ] 2SK1068 N o .2 7 4 8 S A \Y O N-Channel Junction Silicon FET Impedance Conversion Applications A p p lic a tio n s • Inpedance conversion •Irfrared sensor F eatu res • Small Igss - Small crss • Very small-sized package perm itting 2SK1068-applied sets to be made sm aller and slimmer

Contextual Info: Ordering number:EN2747 N-Channel Junction Silicon FET 2SK1066 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • High-frequency general-purpose amplifier. · AM tuner RF amplifier. · Low-noise amplifier. unit:mm 2058

Contextual Info: 2SK1068 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V) I(D) Max. (A)1.0m I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)500p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)300u

2SK1060

Abstract: K1060 TC-7642 JE 33 lm 3773 xm 0911 P0886 tc7642 lft03 2sk1060-z
Contextual Info: M O S F ie ld E ffe ct P o w e r T ra n sisto rs 2SK1060,1060 I # N X < r 7 — M O S F E T « Ï o n y J V 'O V Vcs — 4 V X '< r > r — °i& RD S(0n>(= 0-27 ß at Vcs = 10 V) 2SK1060-Z f i W / ' J v K IC n & tz & M fr U - KDüI ¿hT " t 0 (T a - 25 °C )

ke marking transistor

Abstract: 2SJ168 2SK1062 marking transistor KE marking jyw JYW marking marking ke toshiba
Contextual Info: TOSHIBA 2SK1062 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE 2 S K 1 062 HIGH SPEED SW ITCHING APPLICATIONS Unit in mm A N A L O G SW ITCHING APPLICATIONS + 0.5 2 .5 - 0 .3 INTERFACE APPLICATIONS + 0.25 1 .5 -0 .1 5 Excellent Switching Time : ton = 14ns Typ.

2SK1065

Abstract: 2SK242 2SK106 EN2746
Contextual Info: Ordering number:EN2746 N-Channel Junction Silicon FET 2SK1065 High-Frequency General-Purpose Amplifier Applications Package Dimensions unit:mm 2057 [2SK1065] 0.425 • Ultrasmall-sized package permitting 2SK1065applied sets to be made smaller and slimmer. · Small Crss Crss=0.04pF typ .

2sk129

Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119

2SK1068

Abstract: 2SK545 ITR01011 ITR01012 ITR01013 ITR01014 ITR01015 ITR01016 ITR01017
Contextual Info: 注文コード No. N 2 7 4 8 2SK1068 No. N2748 83199 2SK1068 用途 N チャネル接合形シリコン電界効果トランジスタ インピーダンス変換用 ・インピーダンス変換用。 ・赤外線センサ用。 特長 ・IGSS が小さい。

KDS 1M

Abstract: kds 9a 2SK1063 2SK1064 KDS 5M HITACHI 2SK* TO-3 Hitachi Scans-001 kds 8a
Contextual Info: 2SK1063.2SK1O64blE D • MMTbiEOS 0 0 1 3 1 7 3 S IL IC O N N -C H A N N E L M O S F E T T3T ih itm HITAC HI/ O PTOE LEC TRON ICS HIGH SPEED POWER SWITCHING 1. Gat« 2. 3. Source D rain (C ase) (Dimensions in nun) (JEDEC TO-3) ¡A B S O L U T E MAXIMUM R A TING S (T o -2 5 °C )