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    2SK111 Price and Stock

    Toshiba America Electronic Components 2SK1119(F)

    MOSFET N-CH 1000V 4A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK1119(F) Tube 50
    • 1 -
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    • 100 $2.7636
    • 1000 $2.7636
    • 10000 $2.7636
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    Toshiba America Electronic Components 2SK1118

    TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,6A I(D),SOT-186
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    Quest Components 2SK1118 209
    • 1 $13.5
    • 10 $13.5
    • 100 $5.4
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    Chip 1 Exchange 2SK1118 1,211
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    ROHM Semiconductor 2SK1118

    TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,6A I(D),SOT-186
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK1118 49
    • 1 $13.5
    • 10 $6.75
    • 100 $5.85
    • 1000 $5.85
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    2SK111 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK111 Unknown FET Data Book Scan PDF
    2SK111 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK111 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK111 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK1112 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1112 Toshiba Original PDF
    2SK1112 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1112 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1113 Toshiba Original PDF
    2SK1113 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1113 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1113 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1113 Unknown Scan PDF
    2SK1114 Toshiba Original PDF
    2SK1114 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1114 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1114 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1115 Toshiba Original PDF
    2SK1115 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK1115 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    2SK111 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK1119 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII 2SK1119 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original
    PDF 2SK1119 O-220AB SC-46 2-10ments,

    k1119

    Abstract: No abstract text available
    Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original
    PDF 2SK1119 k1119

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original
    PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    K1119

    Abstract: 2SK1119 2-10P1B
    Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


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    PDF 2SK1119 K1119 2SK1119 2-10P1B

    2sk129

    Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119


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    PDF 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2sk129 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131

    k1119

    Abstract: 2SK1119 2-10P1B VDD400 2SK1119-3
    Text: 2SK1119 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅡ.5 2SK1119 ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS ( ON ) = 3.0Ω(標準) z 順方向伝達アドミタンスが高い。


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    PDF 2SK1119 O-220AB SC-46 2-10P1B VDD400 K1119 k1119 2SK1119 2-10P1B 2SK1119-3

    k1119

    Abstract: 2-10P1B 2SK1119
    Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original
    PDF 2SK1119 k1119 2-10P1B 2SK1119

    Untitled

    Abstract: No abstract text available
    Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current


    Original
    PDF 2SK1119 O-220ABments,

    2sj239

    Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
    Text: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]


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    PDF 2SK1112 2SK1719 2SJ239 2SK2030 2SK1079 TE12L) 2SK1078 2SJ238 2sj239 TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL

    nsi 60 jg

    Abstract: No abstract text available
    Text: T O SH IB A 2SK1119 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S II-5 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • INDUSTRIAL APPLICATIONS U n it in mm


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    PDF 2SK1119 300/uA nsi 60 jg

    k1113

    Abstract: 2SK111
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-7r-MOSin 2SK1113 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Unit in mm 6.8 MAX. . 3 , 5.2±0.2 FEATURES : Í V


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    PDF 2SK1113 100uA 20kfl) k1113 2SK111

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK1119 TOSHIBA FIELD EFFECT TRANSISTOR j <; V SILICON N CHANNEL MOS TYPE tt-MOSII-5 k Hm. 1• 1■ 1■ q«T1 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in min “


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    PDF 2SK1119

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL 2 S K 1 119 DATA SILICON N CHANNEL MOS TYPE 7T- M O S II • 5 (2SK1119) INDUSTRIAL APPLICATIONS U n it in mm HIGH SPEED, HIGH C URRENT SW ITC H IN G APPLICATIONS. DC-DC CO NVERTER A N D M O TO R DRIVE APPLICATIO N S.


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    PDF 2SK1119 2SK1119) 2SK1119

    2SK1114

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTOR_ SILICON N CHANNEL MOS TYPE L2-7r-MOSm 2SK1114 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U n i t i n mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 10.3M A X . , FEATURES :


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    PDF 2SK1114 100viA 2SK1114

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1119 Field Effect Transistor In d u s tria l A p p lic a tio n s U n it in m m Silicon N Channel MOS Type n-MOS II >3.6 ± 0 . 2 1 0 .3 M AX High Speed, High Current DC-DC Converter, w \ Relay Drive and Motor Drive Applications F e a tu re s X


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    PDF 2SK1119

    2SK1117

    Abstract: transistor 2sk1117
    Text: 2SK1117 FIELD EFFECT TRANSISTOR_ s iu C O ^ ^ ^ H A N N E ^ M O ^ ^ ^ ^ ^ M O S n T HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in nun ¥ 10.3 M A Ï .


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    PDF 2SK1117 00A//us 2SK1117 transistor 2sk1117

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1112 Field Effect Transistor Silicon N Channel MOSType L2-jt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance • R DS(ON) = 0.12£2 (Typ.)


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    PDF 2SK1112

    2SK111

    Abstract: 24N10 2-10P1B 2SK1119
    Text: TOSHIBA 2SK1119 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • Low Drain-Source ON Resistance


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    PDF 2SK1119 2SK111 24N10 2-10P1B 2SK1119

    Untitled

    Abstract: No abstract text available
    Text: 2SK1119 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • U n it in mm Low Drain-Source ON Resistance : Rd S(O N )~3.00 (Typ.)


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    PDF 2SK1119 20kil)

    transistor a950

    Abstract: A950 Y OA
    Text: TOSHIBA Discrete Semiconductors 2SK1118 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType ti-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance


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    PDF 2SK1118 TDt17SSD D21Sc transistor a950 A950 Y OA

    2SK1112

    Abstract: transistor 2sk1112
    Text: TOSHIBA 2SK1112 Field Effect Transistor Silicon N Channel MOS Type L2-rc-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance " R ds (ON) = 0 .1 2£2 (Typ.)


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    PDF 2SK1112 2SK1112 transistor 2sk1112

    k1119

    Abstract: transistor k1119 power switching
    Text: FIELD EFFECT TRAN SISTO R 2SK1119 SILICON N CHANNEL MOS TYPE a:-MOSii HIGH S P EE D ,H IG H CURRENT SWITCHING A P P LIC ATIO N S. INDUSTRIA L APPLICATIO NS SWITCHING POWER SUPPLY A PP LIC ATIO NS. U n i t in mm 10.3MAI. *3.6±0.2 îï FEATURES: • Low D ra in -S o u r c e ON R e s is ta n c e :


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    PDF 2SK1119 Puls700 k1119 transistor k1119 power switching

    D3A transistor

    Abstract: 2SK1118 D3A DIODE Field Effect Transistor Silicon N Channel MOS vdss 600 5400V
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE w-MOSn 2SK1118 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER ANO HOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS FEATURES: • Low Drain-Source ON Resistance : RDS(0N)= 0.95Q (Typ.)


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    PDF 300juA 10tfs 00A/ws D3A transistor 2SK1118 D3A DIODE Field Effect Transistor Silicon N Channel MOS vdss 600 5400V

    2SK1113

    Abstract: Q 206
    Text: TOSHIBA 2SK1113 Field Effect Transistor Silicon N Channel MOS Type L2-tt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance • ^DS(ON) = 0.33Q (Typ.)


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    PDF 2SK1113 10OpA 2SK1113 Q 206