2SK314 Search Results

2SK3147S

Contextual Info: IC MOSFET SMD Type Silicon N Cannel MOSFET 2SK3147S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.1 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1

HITACHI 2SK* TO-3

Contextual Info: 2SK3149 Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance R ds = 45 m ii typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline T O -220A B Absolute Maximum Ratings Ta = 25 °C

Contextual Info: 2SK3147 L ,2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI 1st. Edition February 1999 Features • Low on-resistance • • Rds = 0.1 Q. typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline DPAK-2 II

Contextual Info: 2SK3148 Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance • Rds = 45 m ii typ. High speed switching • 4 V gate drive device can be driven from 5 V source Outline T O -2 2 0 F M Absolute Maximum Ratings Ta = 25 °C

Hitachi DSA002749

Contextual Info: 2SK3148 Silicon N Channel MOS FET High Speed Power Switching 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 45 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 1. Gate 2. Drain

Contextual Info: 2SK3141 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-680B Z 3rd. Edition February 1999 Features • Low on-resistance • • R DS(on) = 4 m ii typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline Absolute Maximum Ratings (Ta = 25 °C)

Hitachi DSA0076

Abstract: 2SK3149
Contextual Info: 2SK3149 Silicon N Channel MOS FET High Speed Power Switching ADE-208-749B Z 3rd. Edition Mar. 2001 Features • Low on-resistance R DS =45mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2

2SK314

Abstract: 4511 gm JE 33 5551a tt 22
Contextual Info: NEC j m*Ti\rx A J u n c tio n Field E ffe c t T ra n s is to r 2SK314 m Silicon N-Channel Junction FET Audio Frequency Low Noise Amplifier Industrial Use Ü - E 1 /P A C K A G E DIM ENSIO NS ^ « /F E A T U R E S Unit : mm o ® iß « T " to NF = 1.0 dB TYP. (VDs = 10 V,Id = 5 mA,RG= 1.0 kQ,f=100 Hz)

2SK3149

Abstract: 4560M Hitachi DSA00398
Contextual Info: 2SK3149 Silicon N Channel MOS FET High Speed Power Switching ADE-208-749A Z 2nd. Edition February 1999 Features • Low on-resistance R DS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220AB

Contextual Info: 2SK3140 Spice parameter .SUBCKT 2sk3140 1 2 3 * Model generated on Jul 26, 99 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model Version 1.0 * External Node Designations * Node 1 -> Drain * Node 2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u W=100u * Default values used in MM:

2SK3142

Abstract: Hitachi DSA00239
Contextual Info: 2SK3142 Silicon N Channel MOS FET High Speed Power Switching ADE-208-681A Z 2nd. Edition February 1999 Features • Low on-resistance R DS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220CFM

Hitachi DSA00279

Contextual Info: 2SK3149 Silicon N Channel MOS FET High Speed Power Switching ADE-208-749A Z 2nd. Edition February 1999 Features • Low on-resistance R DS = 45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220AB

Hitachi DSA00276

Contextual Info: 2SK3142 Silicon N Channel MOS FET High Speed Power Switching ADE-208-681A Z 2nd. Edition Feb. 1999 Features • Low on-resistance R DS(on) =4mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G 1 2

2SK3140

Abstract: Hitachi DSA00239
Contextual Info: 2SK3140 Silicon N Channel MOS FET High Speed Power Switching ADE-208-767C Z 4th. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220CFM

2SK3140

Abstract: PRSS0003AE-A
Contextual Info: 2SK3140 Silicon N Channel MOS FET High Speed Power Switching REJ03G1069-0500 Previous: ADE-208-767C Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline

DS1280

Abstract: 2SK3149 2SK3149-E PRSS0004AC-A
Contextual Info: 2SK3149 Silicon N Channel MOS FET High Speed Power Switching REJ03G1074-0400 Previous: ADE-208-767C Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline

2sk4005

Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321

Hitachi DSA002749

Contextual Info: 2SK3149 Silicon N Channel MOS FET High Speed Power Switching 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 45 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO–220AB D G 1 2 S 3 1. Gate

Hitachi DSA00280

Contextual Info: 2SK3147 L , 2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731 (Z) 1st. Edition Feb. 1999 Features • Low on-resistance R DS =0.1 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2

1E32

Contextual Info: 2SK3142 Spice parameter .SUBCKT 2sk3142 1 2 3 * Model generated on May 25, 99 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model Version 1.0 * External Node Designations * Node 1 -> Drain * Node 2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u W=100u * Default values used in MM:

Contextual Info: Transistors IC SMD Type Product specification 2SK3147S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.1 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1

Hitachi DSA002753

Contextual Info: 2SK3140 Silicon N Channel MOS FET High Speed Power Switching ADE-208-767C Z 4th. Edition February 1999 Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source 2SK3140 Outline TO–220CFM

Hitachi DSA002749

Contextual Info: 2SK3141 Silicon N Channel MOS FET High Speed Power Switching ADE-208-680B Z 3rd. Edition February 1999 Features • • • Low on-resistance RDS(on) = 4 mΩ typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline TO–220AB D

Hitachi DSA002780

Contextual Info: 2SK3147 L ,2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731(Z) 1st. Edition December 1998 Features • • • Low on-resistance R DS =0.1 Ω typ. High speed switching 4V gate drive device can be driven from 5V source Outline DPAK–2