2SK316 Search Results

2SK3161

Abstract: 2SK3161-E 2SK3161STL-E PRSS0004AE-A
Contextual Info: 2SK3161 L , 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1086-0300 (Previous: ADE-208-734A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

Hitachi DSA002779

Contextual Info: 2SK3162 Silicon N Channel MOS FET High Speed Power Switching ADE-208-735B Z 3rd. Edition February 1999 Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D

Hitachi DSA002749

Contextual Info: 2SK3161 L , 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 90 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 D 4 1

Hitachi DSA002749

Contextual Info: 2SK3160 Silicon N Channel MOS FET High Speed Power Switching 1st. Edition February 1999 Features • • • Low on-resistance RDS = 130 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 1. Gate 2. Drain

2SK3160

Abstract: DSA003713
Contextual Info: 2SK3160 Silicon N Channel MOS FET High Speed Power Switching ADE-208-751 Z 1st. Edition February 1999 Features • Low on-resistance R DS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM

2SK3161

Abstract: 2SK3161L Hitachi DSA00239
Contextual Info: 2SK3161 L , 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-734A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS = 90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline

2sk4005

Abstract: 2SK385 2SK332 2SK339 2SK309 2SK400 2SK336 2SK386 2sk317 2SK354
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min 2SK301 2SK302 2SK303 2SK304 2SK308 2SK309 2SK310 2SK311 2SK312 2SK313 2SK314 2SK315 2SK316 2SK317 2SK318 2SK319 2SK320 2SK321

Hitachi DSA0076

Abstract: 2SK3160
Contextual Info: 2SK3160 Silicon N Channel MOS FET High Speed Power Switching ADE-208-751A Z 2nd. Edition Mar. 2001 Features • Low on-resistance R DS =130mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2

2SK3160

Abstract: 2SK3160-E PRSS0003AD-A
Contextual Info: 2SK3160 Silicon N Channel MOS FET High Speed Power Switching REJ03G1085-0300 Previous: ADE-208-751A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline

2SK3162-E

Abstract: 2SK3162 PRSS0003AD-A
Contextual Info: 2SK3162 Silicon N Channel MOS FET High Speed Power Switching REJ03G1087-0400 Previous: ADE-208-735C Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline

Hitachi DSA002779

Contextual Info: 2SK3163 Silicon N Channel MOS FET High Speed Power Switching 1th Edition December. 1998 Features • • • Low on-resistance R DS on =6mΩ typ. Low drive current 4V gate drive device can be driven from 5V source Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain

Hitachi DSA00279

Contextual Info: 2SK3160 Silicon N Channel MOS FET High Speed Power Switching ADE-208-751 Z 1st. Edition February 1999 Features • Low on-resistance R DS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM

Hitachi DSA002753

Contextual Info: 2SK3163 Silicon N Channel MOS FET High Speed Power Switching 2nd Edition February 1999 Features • • • Low on-resistance RDS on = 6 mΩ typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain

Hitachi DSA0076

Abstract: 2SK3162
Contextual Info: 2SK3162 Silicon N Channel MOS FET High Speed Power Switching ADE-208-735B Z 3rd. Edition Feb. 1999 Features • Low on-resistance R DS =60mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220FM D G 1 2

DA300

Abstract: Hitachi DSA00280
Contextual Info: 2SK3163 Silicon N Channel MOS FET High Speed Power Switching ADE-208-736A Z 2nd Edition Feb. 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–3P D G 1 S

2SK3163

Contextual Info: 2SK3163 Spice parameter .SUBCKT 2sk3163 1 2 3 * Model generated on Jul 26, 99 * MODEL FORMAT: SPICE3 * Symmetry POWER MOS Model Version 1.0 * External Node Designations * Node 1 -> Drain * Node 2 -> Gate * Node 3 -> Source M1 9 7 8 8 MM L=100u W=100u * Default values used in MM:

Contextual Info: 2SK3161 L , 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance • • Rds = 90 m ii typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LD P A K

C3005

Abstract: Hitachi DSA00280
Contextual Info: 2SK3161 L , 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-734A (Z) 2nd. Edition Feb. 1999 Features • Low on-resistance R DS =90mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK

c2075

Abstract: 2SK3162 Hitachi DSA00307
Contextual Info: 2SK3162 Silicon N Channel MOS FET High Speed Power Switching ADE-208-735B Z 3rd. Edition February 1999 Features • Low on-resistance R DS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM

2SK3163

Abstract: 2SK3163-E PRSS0004ZE-A SC-65
Contextual Info: 2SK3163 Silicon N Channel MOS FET High Speed Power Switching REJ03G1088-0300 Previous: ADE-208-736A Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline

2SK3163 equivalent

Abstract: 2SK3163 Hitachi DSA00239
Contextual Info: 2SK3163 Silicon N Channel MOS FET High Speed Power Switching ADE-208-736A Z 2nd Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–3P D G

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sk3155

Abstract: 2sk3148 Fuel injection
Contextual Info: Hitachi Power MOS FET D5 Series : Low on-resistance at 1 00V to 200V V dss * i •Applications ¡Feature and Merit Electrical equipment Feature In-pipe fuel injection High 1 Monitor S-correction Merit High breakdown voltage promotes equipm ent safety planning

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid