2SK374 Search Results

k3742

Abstract: K3742 transistor k3742 7 2SK3742
Contextual Info: 2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3742 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)

2SK1216

Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary

2SK374

Contextual Info: Silicon Junction FETs Small Signal 2SK374 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 1.9±0.2 1 0.95 +0.2 ● Low noise-figure (NF)

Contextual Info: Ordering number : EN8283A 2SK3746 N-Channel Power MOSFET http://onsemi.com 1500V, 2A, 13Ω, TO-3P-3L Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability Adoption of HVP process Avalanche resistance guarantee

Contextual Info: 2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type -MOSIV 2SK3742 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)

k3747

Abstract: K3747 mosfet 2SK3747 2SK37
Contextual Info: 2SK3747 Ordering number : ENN7767 2SK3747 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process . Attachment workability is good by Mica-less package.

k3742

Abstract: K3742 transistor 2SK3742 k3742 7
Contextual Info: 2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3742 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)

K3748

Abstract: 2SK3748 k374
Contextual Info: 2SK3748 注文コード No. N 8 2 5 0 2SK3748 N チャネル MOS 形シリコン電界効果トランジスタ 高耐圧高速スイッチング 特長 ・低オン抵抗、低入力容量、超高速スイッチング。 ・高信頼性 HVP プロセス採用 。

K3745

Abstract: 2sk3745
Contextual Info: Ordering number : ENN7074 2SK3745 N-Channel Silicon MOSFET 2SK3745 High-Voltage,High-Speed Switching Applications Preliminary Features • • Low ON resistance, low input capacitance, Ultrahigh-speed switching. High reliability Adoption of HVP process .

2SK3746

Abstract: 2SK374 bsim3
Contextual Info: 2SK3746 SPICE PARAMETER Nch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 2.7 NLX 4.7E-07 DVT2 -0.01 UB 1.0E-21 AGS 1.0 RDSW 9.0E+05 WINT NFACTOR 0.64 CDSCD PCLM 0.01 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 1.0E-10 CGDL 6.0E-09 CLC

K3742 transistor

Contextual Info: 2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3742 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)

Contextual Info: 2SK3746 Ordering number : EN8283A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3746 High-Voltage, High-Speed Switching Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability Adoption of HVP process

2SK3743

Contextual Info: 2SK3743 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3743 Unit: mm Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.)

k3747

Abstract: K3747 mosfet 2SK3747 SC-94 JEDEC
Contextual Info: 2SK3747 Ordering number : EN7767B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK3747 High-Voltage, High-Speed Switching Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability Adoption of HVP process

Contextual Info: 2SK3748 Ordering number : ENN8250 2SK3748 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process . Attachment workability is good by Mica-less package.

K3742 transistor

Abstract: k3742 transistor K3742
Contextual Info: 2SK3742 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3742 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)

2SK3748

Abstract: K3748 k3748 transistor ta 8250
Contextual Info: 2SK3748 Ordering number : ENN8250A 2SK3748 N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process . Attachment workability is good by Mica-less package.

2SK0374

Abstract: 2SK374
Contextual Info: Silicon Junction FETs Small Signal 2SK0374 (2SK374) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 1.9±0.2 1 0.95 +0.2 ● Low noise-figure (NF)

2BR marking

Contextual Info: Silicon Junction FETs Small Signal 2SK0374 (2SK374) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06 5° 0.4±0.2 2.8+0.2 –0.3 ● Low noise-figure (NF)

D1713

Abstract: 2SK3749 DIODE C04 02 90
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3749 N チャネル MOS FET 高速スイッチング用 2SK3749 は，2.5 V 駆動タイプの N チャネル縦形 MOS 外形図（単位：mm） FET であり，低電圧で駆動でき，かつドライブ電流を考慮す

D1713

Abstract: 2SK3749
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3749 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK3749 is an N-channel vertical MOS FET. Because 2.1 ± 0.1 1.25 ± 0.1 it can be driven by a voltage as low as 2.5 V and it is not

2SK3745LS

Abstract: K3745 2sk3745
Contextual Info: 2SK3745LS Ordering number : EN8635 N-Channel Silicon MOSFET 2SK3745LS High-Voltage, High-Speed Switching Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .

S 170 MOSFET TRANSISTOR

Abstract: 2SK3740 transistor smd 49
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3740 +0.1 1.27-0.1 TO-263 Features Gate voltage rating: Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 30 V RDS on = 160 mÙ MAX. (VGS = 10 V, ID = 10 A) 5.60 +0.2 15.25-0.2 +0.2 8.7-0.2 Low on-state resistance 0.1max

d1691

Abstract: 2SK3740 2SK3740-ZK
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3740 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3740 is N-channel MOS FET device that ORDERING INFORMATION features a low on-state resistance and excellent switching characteristics, designed for high voltage