2SK198 Search Results

Contextual Info: 2SK1983-01 N-channel MOS-FET FAP-IIA Series 900V > Features - 4Ω 3A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK0198

Abstract: 2SK198
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET For low-frequency amplification • Package • High mutual conductance gm • Low-noise characteristics • Mini type package, allowing downsizing of the sets and automatic

Contextual Info: 2SK1980 Power F-MOS FETs 2SK1980 Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche ● No 6.0±0.5 1.0±0.1 switching : tf= 25ns secondary breakdown 1.5±0.1 ● High-speed 3.4±0.3 8.5±0.2 VGSS=±30V guaranteed 10.0±0.3 ● energy capability guaranteed : EAS > 15mJ

Contextual Info: 2SK1981-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators

mosfet 500v

Contextual Info: F U JI 2SK1981-01 N-channel MOS-FET 500V 0,76Q 10A 80W FAP-IIA Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: 2SK1986-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators

2SJ83

Abstract: 2SK238 2SJ82 2SK241 2SK240 2SK203 2SK220 2S119 2SK197 2SK198
Contextual Info: - 38 - * . 1 fr K ft f M € tí: € 2SK197 B ÍL B ÍL 2SK198 tñ“ F 2 SK196 H 2SK199 2SK201 NEC 2SK203 NEC 2SK208 m m m £ 4 -k % Vg s * X V* m (V) * (V) 800m 2m 120 0.2 -2 10 10m G 150m -lOn -0.5 2m 14m 10 -0.3 -4 10 LF A J N D -30 GDO 10m G 150m

2SK1985

Contextual Info: 2SK1985-01 MR FUJI PO W ER M O S-FET N-iiHANNEL SILICON POWER MOS-FET F A P - IIA S E R IE S Outline Drawings • Features • High speed switching • Low on-resistance • Do secondary breakdown • l o w driving power • High voltage • Vc.s~ ± 3 0 V Guarantee

2SK1216

Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary

Contextual Info: 2SK198 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30Â V(BR)GSS (V)30Ê I(D) Max. (A)20m I(G) Max. (A) Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)125õ I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: Silicon Junction FETs Small Signal 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5° 1.50+0.25 –0.05 2.8+0.2 –0.3 3 ● High mutual conductance gm ● Low noise type

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET Unit: mm For low-frequency amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VDS 30 V VDGO 30

nec 7912

Abstract: TC-7912 2SK1988 2SK1989 MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1988, 1989 SWITCHING N-CHANNEL POWER MOS FET

2SK0198

Abstract: 2SK198
Contextual Info: Silicon Junction FETs Small Signal 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification unit: mm +0.2 2.8 –0.3 • Features +0.25 0.65±0.15 1.45 0.95 1 3 +0.1 0.4 –0.05 1.9±0.2 1.5 –0.05 0.95 +0.2 ● High mutual conductance gm

Contextual Info: 2SK1982-01 M R FUJI PO W ER M O S-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings • Features • High speed switching • Lew on-resistance • No secondary breakdown • Low driving power • High voltage Gate • V S = + 3 0V Guarantee

2SK1981-01

Contextual Info: 2SK1981-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET For low-frequency amplification • Package • High mutual conductance gm • Low-noise characteristics • Mini type package, allowing downsizing of the sets and automatic

2SK1982

Contextual Info: 2SK1982-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220F15 Applications Switching regulators

Contextual Info: 2SK1984-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220F15 Applications Switching regulators

Contextual Info: 2SK1983-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators

nec 7912

Abstract: TRANSISTOR 7912 2SK1989 2SK1988 TC-7912 MEI-1202 TEA-1035
Contextual Info: DATA SHEET ,r NEC - » - MOS FIELD EFFECT POWER TRANSISTOR 2SK1988, 1989 Â SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1988, 1989 is N -channel M O S Field Effect T ra n ­ PACKAGE DIMENSIONS in millim eters

2SK0198

Abstract: 2SK198
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET For low-frequency amplification • Package • High mutual conductance gm • Low-noise characteristics • Mini type package, allowing downsizing of the sets and automatic

2SK1984-01M

Abstract: 2SK1984
Contextual Info: 2SK1984-01M N-channel MOS-FET FAP-IIA Series 900V > Features - 4Ω 3A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK0198

Abstract: 2SK198
Contextual Info: Silicon Junction FETs Small Signal 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 ● High mutual conductance gm ● Low noise type