2SK420 Search Results

2SK420 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK420	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SK420	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	123.53KB	1
2SK420	Unknown	FET Data Book	Scan	PDF	96.38KB	2
2SK420	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	82.7KB	1
2SK420	Toshiba	Silicon N-Channel MOS Type Transistor	Scan	PDF	53.05KB	1
2SK420/1	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	82.7KB	1
2SK420/2	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	82.7KB	1
2SK420/3	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	82.7KB	1
2SK420/4	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	82.7KB	1
2SK420/5	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	82.7KB	1
2SK420/6	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	82.7KB	1
2SK4207	Toshiba	2SK4207 - TRANSISTOR 13 A, 900 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-16C1B, SC-65, 3 PIN, FET General Purpose Power	Original	PDF	208.37KB	6
2SK4207	Toshiba	Transistors - Mosfets	Original	PDF	208.34KB	6
2SK4207	Toshiba	Japanese - Transistors - Mosfets	Original	PDF	243.07KB	6

2SK4209	ON Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 12A TO-3PB	Original	PDF	288.88KB
2SK4209	SANYO Electric	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 12A TO-3PB	Original	PDF		5

2SK420 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
k4207 Abstract: 2SK4207 SC-65 Contextual Info: 2SK4207 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅣ 2SK4207 ○ スイッチングレギュレータ用単位: mm 順方向伝達アドミタンスが高い。 : \|Yfs\| = 11 S (標準) • 漏れ電流が低い。 •	Original	2SK4207 k4207 2SK4207 SC-65	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV	Original	2002/95/EC) 2SK4206G	PDF
K4207 Contextual Info: 2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4207 Swiching Regulator Applications Unit: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. z Low drain−source ON-resistance: RDS (ON) = 0.78Ω (typ.) Absolute Maximum Ratings (Ta = 25°C)	Original	2SK4207 K4207	PDF
K4208 Abstract: 2sk4208 2SK420 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±30 V guaranteed  Avalanche energy capability guaranteed: EAS > 801 mJ	Original	2002/95/EC) 2SK4208 O-220D-A1 K4208 2sk4208 2SK420	PDF
2SK4201 Abstract: 2SK4201-S19 2SK42 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)	Original	2SK4201 2SK4201 2SK4201-S19-AY O-220 2SK4201-S19 2SK42	PDF
2SK4200 Abstract: K4200 2SK4200LS A13333 A13334 2SK42 A13331 ENA1333 Contextual Info: 2SK4200LS Ordering number : ENA1333 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4200LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.	Original	2SK4200LS ENA1333 A1333-5/5 2SK4200 K4200 2SK4200LS A13333 A13334 2SK42 A13331 ENA1333	PDF
a1290 Abstract: K4204 2SK4204 2SK42 2SK4204LS ENA1290 Contextual Info: 2SK4204LS Ordering number : ENA1290 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4204LS General-Purpose Switching Device Applications Features • • 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C	Original	2SK4204LS ENA1290 PW10s, A1290-5/5 a1290 K4204 2SK4204 2SK42 2SK4204LS ENA1290	PDF
2SK4206 Abstract: Marking code 9H 2SK4206G Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV	Original	2002/95/EC) 2SK4206G 2SK4206 Marking code 9H 2SK4206G	PDF
K4208 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±30 V guaranteed  Avalanche energy capability guaranteed: EAS > 801 mJ	Original	2002/95/EC) 2SK4208 O-220D-A1 K4208	PDF
2sk4202 Abstract: nec k4202 k4202 2sk420 d1922 2SK4202-S19-AY NEC TRANSISTOR MARKING CODE 2SK4202-S19 2SK42 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)	Original	2SK4202 2SK4202 2SK4202-S19-AY O-220 nec k4202 k4202 2sk420 d1922 2SK4202-S19-AY NEC TRANSISTOR MARKING CODE 2SK4202-S19 2SK42	PDF
A1516 Abstract: 2SK4209 A-1516 2SK42 k420 Contextual Info: 2SK4209 Ordering number : ENA1516 SANYO Semiconductors DATA SHEET 2SK4209 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.	Original	2SK4209 ENA1516 PW10s, A1516-5/5 A1516 2SK4209 A-1516 2SK42 k420	PDF
A1289 Abstract: A-1289 A1289-5 2SK42 2SK4203LS 2SK4203 K4203 Contextual Info: 2SK4203LS Ordering number : ENA1289 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4203LS General-Purpose Switching Device Applications Features • • 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C	Original	2SK4203LS ENA1289 PW10s, A1289-5/5 A1289 A-1289 A1289-5 2SK42 2SK4203LS 2SK4203 K4203	PDF
Contextual Info: 2SK4209 Ordering number : ENA1516 SANYO Semiconductors DATA SHEET 2SK4209 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.	Original	2SK4209 ENA1516 A1516-5/5	PDF
2SK4206 Abstract: u265 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV	Original	2002/95/EC) 2SK4206 2SK4206 u265	PDF

2SK4207 Contextual Info: 2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4207 Swiching Regulator Applications Unit: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. z Low drain−source ON-resistance: RDS (ON) = 0.78 Ω (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)	Original	2SK4207 2SK4207	PDF
2SK425 Abstract: 2sk423 2SK424 2SK530 2SK422 2SK426 2SK407 2SK425-13 2SK428 2SK433 Contextual Info: A f m s 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 L (S) 2SK417 2SK418 2SK419 2SK420 2SK421 2SK422 2SK423 2SK424 2SK425 2SK426 2SK427 2SK428 2SK429(L)(S) 2SK430(L) (S) 2SK431 ' 2SK433 2SK435 2SK436 2SK437 a NEC NEC U aL BÍL	OCR Scan	2SK406 2SK407 2SK408 2SK409 2SK410 2SK531 2SK421 2SK422 2SK423 2SK424 2SK425 2sk423 2SK424 2SK530 2SK422 2SK426 2SK425-13 2SK428 2SK433	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV	Original	2002/95/EC) 2SK4206	PDF
2SK4206 Abstract: 2SK4206G Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV	Original	2002/95/EC) 2SK4206G 2SK4206 2SK4206G	PDF
k4202 Abstract: 2SK4202 nec k4202 d1922 2SK4202-S19-AY D19229EJ1V0DS Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)	Original	2SK4202 2SK4202 2SK4202-S19-AY O-220 k4202 nec k4202 d1922 2SK4202-S19-AY D19229EJ1V0DS	PDF
2SK4206 Abstract: 2SK42 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package  Low noise voltage NV  High voltage gain GV	Original	2002/95/EC) 2SK4206 2SK4206 2SK42	PDF
K4208 Abstract: 2SK4208 2SK420 2SK42 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±30 V guaranteed  Avalanche energy capability guaranteed: EAS > 801 mJ	Original	2002/95/EC) 2SK4208 O-220D-A1 K4208 2SK4208 2SK420 2SK42	PDF
K4207 Abstract: 2SK4207 SC-65 Contextual Info: 2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4207 Swiching Regulator Applications Unit: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. z Low drain−source ON-resistance: RDS (ON) = 0.78 Ω (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)	Original	2SK4207 K4207 2SK4207 SC-65	PDF
2sk4206g Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features  Package  Low noise voltage NV	Original	2002/95/EC) 2SK4206G 2sk4206g	PDF
dc-dc converter hitachi Abstract: 2SK429 kl diode 2SK42 Hitachi Scans-001 b205 Contextual Info: b lE D • 4 ^ 1 ,2 0 5 G G ia O b ? ÔS5 ■ H IT M 2SK420 L ,2SK429CSj— H I T A C H I / (O P T O E L E C T R O N IC S ) SILIC O N N -C H A N N E L M O S FET -.4 F P = n m 1t j c~: Li l ■ Type Type HIGH SPEED POWER S W IT C H IN G HIG H F R E Q U E N C Y POWER AMPLIFIER	OCR Scan	2SK429Ã dc-dc converter hitachi 2SK429 kl diode 2SK42 Hitachi Scans-001 b205	PDF

2SK420 Search Results

2SK420 Datasheets (16)

2SK420 Datasheets Context Search

k4207

K4207

K4208

2SK4201

2SK4200

a1290

2SK4206

K4208

2sk4202

A1516

A1289

2SK4206

2SK4207

2SK425

2SK4206

k4202

2SK4206

K4208

K4207

2sk4206g

dc-dc converter hitachi