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    2SK415 Search Results

    2SK415 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    2SK4150TZ-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 0.4A 5700Mohm To-92(1) Visit Renesas Electronics Corporation
    2SK4151TZ-E Renesas Electronics Corporation Nch Single Power Mosfet 150V 1A 1950Mohm To-92(1) Visit Renesas Electronics Corporation
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    2SK415 Price and Stock

    Renesas Electronics Corporation 2SK4151TZ-E

    MOSFET N-CH 150V 1A TO92
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    Verical 2SK4151TZ-E 7,500 472
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    Rochester Electronics 2SK4151TZ-E 7,500 1
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    Renesas Electronics Corporation 2SK4150TZ-E

    MOSFET N-CH 250V 400MA TO92
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    Verical 2SK4150TZ-E 19,000 549
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    Rochester Electronics 2SK4150TZ-E 19,000 1
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    Rochester Electronics LLC 2SK4150TZ-E

    2SK4150TZ - N-CHANNEL POWER MOSF
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    DigiKey 2SK4150TZ-E Bulk 475
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    2SK415 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK415 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK415 Hitachi Semiconductor HIGH SPEED POWER SWITCHING Scan PDF
    2SK415 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK415 Unknown FET Data Book Scan PDF
    2SK415 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK415 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK415 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK4150TZ-E Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 0.4A TO-92 Original PDF
    2SK4151TZ-E Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 1A TO-92 Original PDF

    2SK415 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SK4150 Silicon N Channel MOS FET High Speed Power Switching REJ03G1909-0300 Rev.3.00 May 27, 2010 Features • Capable of 2.5 V gate drive  Low drive current  Low on-resistance RDS on = 4.0  typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C)


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    PDF 2SK4150 REJ03G1909-0300 PRSS0003DA-A Ratin9044

    2SK4150

    Abstract: PRSS0003DA-A SC-43A
    Text: Preliminary Datasheet 2SK4150 Silicon N Channel MOS FET High Speed Power Switching REJ03G1909-0300 Rev.3.00 May 27, 2010 Features • Capable of 2.5 V gate drive  Low drive current  Low on-resistance RDS on = 4.0  typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C)


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    PDF 2SK4150 REJ03G1909-0300 PRSS0003DA-A p9044 2SK4150 PRSS0003DA-A SC-43A

    2SK425

    Abstract: 2sk414 2sk495 2SK405 2SK500 2SK426 2SK431 2SK470 2SK424 2SK433
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SK401 2SK402 2SK403 2SK404 2SK405 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 2SK417 2SK418


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    PDF 2SK401 2SK402 2SK403 2SK404 2SK405 2SK406 2SK407 2SK408 2SK409 2SK410 2SK425 2sk414 2sk495 2SK405 2SK500 2SK426 2SK431 2SK470 2SK424 2SK433

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


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    PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


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    PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    SIEMENS 800

    Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
    Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80


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    PDF O-220AB O-218 O-204 204AC O-238AA SIEMENS 800 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


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    PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


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    2SK415

    Abstract: No abstract text available
    Text: 2SK415 SILICON N-CHANNEL MOS FET y U = 3 > N » r * JUMOS FET HIGH SPEED POWER SWITCHING IB 1. *f 2. \ : G a te K ^ A > ' D ra in 7 7 V ÿ (F la n g e ) 3. */ —• X .* S o u rc e ( D im e n s io n s in mm) (TO-3P) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SK415 2SK415 I-150 Ta-25Â t-15n

    2SK425

    Abstract: 2sk423 2SK424 2SK530 2SK422 2SK426 2SK407 2SK425-13 2SK428 2SK433
    Text: A f m s 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 L (S) 2SK417 2SK418 2SK419 2SK420 2SK421 2SK422 2SK423 2SK424 2SK425 2SK426 2SK427 2SK428 2SK429(L)(S) 2SK430(L) (S) 2SK431 ' 2SK433 2SK435 2SK436 2SK437 a NEC NEC U aL BÍL


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    PDF 2SK406 2SK407 2SK408 2SK409 2SK410 2SK531 2SK421 2SK422 2SK423 2SK424 2SK425 2sk423 2SK424 2SK530 2SK422 2SK426 2SK425-13 2SK428 2SK433

    2SK415

    Abstract: No abstract text available
    Text: HITACHI/-COPTOELECTRONICS} 73 7 3 Ç 10065 " D " 449t>2Ub Hl IACHI / <.UK IUbLhU IKUNIUü; = = 2SK415 DlEJ 4 4 ^ 2 0 5 DDlDObS 2 |~“ 'p~3‘i W 3 - SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING, HIGH FREQUENCY POWER AMPLIFIER


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    PDF 2SK415 --2SK415 2SK415

    2SJ235

    Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow


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    PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ235 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet

    2sk1299

    Abstract: 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


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    PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sk1299 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740

    ac Inverter schematics 10 kw

    Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E
    Text: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES


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    PDF GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E GN6075E GN9060E GN12015C GN12030E ac Inverter schematics 10 kw 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C

    2SK44

    Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
    Text: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


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    PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SK44 2SJ182 2SJ214 2SK513 2SJ235

    2SK1778

    Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


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    PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1665 2SJ215 2SJ217 2SK1303 2SK1778 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972

    2SK1778

    Abstract: 2SK1776 2SK1665 2SK1094 2SJ236 2SK430 2SK1151 2SK1152 2SJ175 2SK579
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. Hitachi's range of devices offers these


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    PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SK1778 2SK1776 2SK1665 2SK1094 2SJ236 2SK430 2SJ175

    2SK1778

    Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


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    PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237

    2sj177

    Abstract: 2sk1778 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SK97-2 2sk1301 2sj175
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


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    PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sj177 2sk1778 2SK97-2 2sk1301 2sj175

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


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    PDF O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297

    200W MOSFET POWER AMP

    Abstract: HA11511CNT 2sk mosfet 2sc2610 2SK1327 2SK1225 2SK296 2sk1342 2SK1635 2SK1151
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow


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    PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 200W MOSFET POWER AMP HA11511CNT 2sk mosfet 2sc2610 2SK1327 2SK1225 2SK296 2sk1342 2SK1635

    2SK1158

    Abstract: 2sk1299 2SK1341 2SK1342 2SK1151 2SK1152 2SK1313 2SK1314 2SK1315 2SK1316
    Text: HITACHI 10 DIII-H Series High Voltage Range, V dss from 250V The DHI-H Series further expands Hitachi's line­ up of advanced MOSFET devices. Recently, new additional high-voltage products to complement those of the low-voltage DIII-L Series. It has the


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    PDF CSJ297 2SK822 2SK1302 2SK1307 2SK1623 2SK622 2SK1303 2SK1304 DC48V 2SK440 2SK1158 2sk1299 2SK1341 2SK1342 2SK1151 2SK1152 2SK1313 2SK1314 2SK1315 2SK1316

    MBN300A6

    Abstract: flyback 200W UPS schematics 2SK1635 2SK415 DC MOTOR SPEED CONTROL USING IGBT Hitachi Three-Phase Motor Driver 2sk1299 2SK1665 GN12030E
    Text: HITACHI 19 2.2 Product Matrix : Discretes Modules The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES


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    PDF GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E GN6075E GN9060E GN12015C GN12030E MBN300A6 flyback 200W UPS schematics 2SK1635 2SK415 DC MOTOR SPEED CONTROL USING IGBT Hitachi Three-Phase Motor Driver 2sk1299 2SK1665

    2sk1299

    Abstract: 2SJ295 2SJ299 transistor 2sk 2SJ278 2SJ279 2SJ290 2SJ291 2SJ292 2SJ298
    Text: HITACHI 1.5.4 13 New DIV-L Series The characteristics of todays power MOSFETs continue to improve as costs drop, resulting in the broader application of these devices in place of bipolar transistors. • 2.5V and 4V gate drive device • High speed switching 30% reduction in


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    PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2sk1299 2SJ295 2SJ299 transistor 2sk 2SJ278 2SJ279 2SJ290 2SJ291 2SJ292 2SJ298