lc241
Abstract: E116950 RS-443
Text: LC Series • Mini-SIP SSR • Ratings to 2A @ 280 VAC • Triac output • DC control • Zero-crossing resistive loads or random-fire (inductive loads) output • Plastic encapsulated PRODUCT SELECTION Control Voltage 1.5A 2A 4-10 VDC LC241 LC242 AVAILABLE OPTIONS
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LC241
LC242
47-63Hz)
RS-443.
E116950
lc241
E116950
RS-443
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E116950
Abstract: RS-443 LC242
Text: LC Series • Mini-SIP SSR • Ratings to 2A @ 280 VAC • Triac output • DC control • Zero-crossing resistive loads or random-fire (inductive loads) output • Plastic encapsulated PRODUCT SELECTION Control Voltage 1.5A 2A 4-10 VDC LC241 LC242 AVAILABLE OPTIONS
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LC241
LC242
47-63Hz)
UL94V-0Molded
RS-443.
E116950
E116950
RS-443
LC242
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Untitled
Abstract: No abstract text available
Text: LC Series • Mini-SIP SSR • Ratings to 2A @ 280 VAC • Dual SCR output normally open • DC control • Zero-crossing (resistive loads) or random-fire (inductive loads) output • Plastic encapsulated PRODUCT SELECTION Control Voltage 1.5A 2A 4-10 VDC
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LC241
LC242
47-63Hz)
UL94V-0Molded
RS-443.
E116950
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Untitled
Abstract: No abstract text available
Text: LC Series • Mini-SIP SSR • Ratings to 2A @ 280 VAC • Dual SCR output normally open • DC control • Zero-crossing (resistive loads) or random-fire (inductive loads) output • Plastic encapsulated PRODUCT SELECTION Control Voltage 1.5A 2A 4-10 VDC
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LC241
LC242
47-63Hz)
UL94V-0Molded
RS-443.
E116950
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Untitled
Abstract: No abstract text available
Text: LC Series • • • • • • Mini-SIP SSR Ratings to 2A @ 280 VAC Dual SCR output normally open DC control Zero-crossing (resistive loads) or random-fire (inductive loads) output Plastic encapsulated PRODUCT SELECTION Control Voltage 1.5A 2A 4-10 VDC
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LC241
LC242
47-63Hz)
UL94V-0Molded
RS-443.
E116950
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter
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OT-23
MMBT3906LT1
MMBT3904LT1
-10mA
-50mA
100MHz
-10mA
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MPS750
Abstract: No abstract text available
Text: MPS750 -2A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES General Purpose Amplification. Collector 1Emitter 2Base 3Collector 3 2 Base Millimeter
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MPS750
-50mA
-500mA
-200mA
-100mA
-50mA,
100MHz
26-Jul-2012
MPS750
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MMBT3904 jiangsu
Abstract: MMBT3904 MMBT3906 MMBT3906 SOT-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 SOT–23 TRANSISTOR PNP FEATURES z Complementary Type The NPN Transistor MMBT3904 is Recommended z Epitaxial Planar Die Construction MARKING: 2A 1. BASE 2. EMITTER
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OT-23
MMBT3906
MMBT3904
MMBT3904 jiangsu
MMBT3906
MMBT3906 SOT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1585S TRANSISTOR PNP TO-92S FEATURES 1. EMITTER Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) Excellent DC current gain characteristics. Power dissipation
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O-92S
2SA1585S
O-92S
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted
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OT-23
MMBT3906LT1
MMBT3904LT1
-10mA
-50mA
100MHz
-10mA
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2SC4115
Abstract: 2SA1585 4115S 4115
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR NPN SOT-89 FEATURES z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) z Excellent current gain characteristics. z Complements to 2SA1585
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OT-89
2SC4115
OT-89
2SA1585
100MHz
4115Q
4115R
4115S
2SC4115
2SA1585
4115S
4115
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MARKING 2A
Abstract: MMBT3906 MMBT3904
Text: MMBT3906 Pb RoHS 0.3 Watts PNP Plastic-Encapsulate Transistors COMPLIANCE SOT-23 Features As complementary type, the NPN transistor MMBT3904 is recommended Epitaxial planar die construction Marking: 2A Dimensions in inches and millimeters Maximum Ratings
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MMBT3906
OT-23
MMBT3904
-10uA,
-50mA,
-10mA
100MHz
-10mA
MARKING 2A
MMBT3906
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR PNP SOT-23 FEATURES z As complementary type the NPN transistor MMBT3904 is recommended z Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER
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OT-23
MMBT3906
OT-23
MMBT3904
-10mA
-50mA
-100mA
-50mA,
-10mA
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2SA1160
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1160 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE Power dissipation 2. COLLECTOR PCM : 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -2A Collector-base voltage
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O-92MOD
2SA1160
O-92MOD
-10mA
-50mA
2SA1160
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2SA1585S
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1585S TRANSISTOR PNP TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PD : 0.4W (Tamb=25℃) Collector current I CM : -2A Collector-base voltage
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O-92S
2SA1585S
O-92S
100MHz
2SA1585S
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2SD2150
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 2SD2150 TRANSISTOR Plastic-Encapsulate Transistors SOT-89 NPN FEATURES z Excellent current-to-gain characteristics z Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A
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OT-89
2SD2150
100mA
500mA
100MHz
tp300S,
2SD2150
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STD1862
Abstract: TRANSISTOR stb1277 STB1277
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors STB1277 TRANSISTOR PNP TO-92 FEATURES z Audio power amplifier z High current application z High current : IC=-2A z Complementary pair with STD1862 1. EMITTER 2. COLLECTOR
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STB1277
STD1862
-500mA
-50mA
STD1862
TRANSISTOR stb1277
STB1277
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STB1277
Abstract: STB1277Y
Text: STB1277 -2A , -30V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. High Total Power Dissipation. High hFE and Good Linearity
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STB1277
STB1277-O
STB1277-Y
-500mA,
08-May-2013
-500mA
-50mA
STB1277
STB1277Y
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 STB1277 TRANSISTOR PNP FEATURES z Audio power amplifier z High current application z High current : IC=-2A z Complementary pair with STD1862 1. EMITTER 2. COLLECTOR
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STB1277
STD1862
-500mA
-50mA
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2SD1761
Abstract: 2SB1187
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD1761 TRANSISTOR NPN TO-220F 1. BASE FEATURES z Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A z Excellent current characteristics of DC current gain.
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O-220F
2SD1761
O-220F
2SB1187
2SD1761
2SB1187
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Untitled
Abstract: No abstract text available
Text: CZD1182 -2A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES D-Pack TO-252 Designed for general Excellent DC Current Gain Characteristics CLASSIFICATION OF hFE
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CZD1182
O-252)
CZD1182-P
CZD1182-Q
CZD1182-R
O-252
-200mA
-500mA,
100MHz
22-Oct-2012
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR NPN SOT-89-3L FEATURES z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) z Excellent current gain characteristics. z Complements to 2SA1585
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OT-89-3L
2SC4115
OT-89-3L
2SA1585
100MHz
4115Q
4115R
4115S
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2150 TRANSISTOR SOT-89-3L NPN FEATURES z Excellent current-to-gain characteristics z Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A
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OT-89-3L
2SD2150
OT-89-3L
100mA
500mA
100MHz
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features • • • • • • PNP Plastic-Encapsulate Transistors Power dissipation: PCM = 0.5W Tamb=25ć Collector current: ICM = -2A Collector-base voltage: V(BR)CBO = -50V Operating and storage junction temperature range
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2SB1140-R
2SB1140-S
OT-89
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