2N103 Search Results

2N2560

Abstract: MT27 2N2553 2N1041 MT28 2N1043 2n1040 2N1042
Contextual Info: ermanium power transistors 142 PNP ALLOY TRANSISTORS 1 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE' TYPE NUMBER CASE SIZE VCB VCE VEB VCE Ic (A) Min. Max. 2N1038 2N1039 2N1040 2N1041 2N2552 2N2553 2N2554 2N2555 2N2556 2N2557 2N2558 2N2559 TO-5 TO-5 TO-5 TO-5

2N1038

Abstract: 2n2553 2N1040 2N1041 2n1039 2N2552 2N2557 ti 2N2553 2N2556 2N1036
Contextual Info: TYPES 2N1038, 2N1039, 2N1040, 2N1041 • 2N2552, 2N2553, 2N2554, 2N2555 • 2N2556, 2N2557, 2N2558, 2N2559 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS M3 I 5s :0B Zssp Guaranteed 4 0 -, 60 -. 8 0 -, or lOO-VOLT UNITS 20 WATTS AT 259C CASE TEMPERATURE

Contextual Info: 2N1037 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)8.0m

Contextual Info: 2N1035 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).40 @I(C) (A) (Test Condition)8.0m

2N1039

Contextual Info: 2N1039 Ge PNP Power BJT 6.75 Transistors Bipolar Germanium PNP Power Transistors. Page 1 of 1 Enter Your Part # Home Part Number: 2N1039 Online Store 2N1039 Diodes Ge PNP Pow er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

AD132

Abstract: 2N400 2N2140A ad131 MP2144 germanium AD140
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 >= 2N257G 2N2578 2N1759 NKT450 2N2358 2N2368 2N2553 2N2557 AUY33 2N11838 2N1038 TI367 TI367 TI367A TI367A 2N3159 AD140 AD140 AD140 AD153 ~~~~~ 25 30 2N1359 2N235A 2N399 2N401 2N1184B 2N400 2N236 2N236A

Contextual Info: 2N1034 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)8.0m

2N1552

Abstract: Germanium power 2N1559a 2N1560 2N1555
Contextual Info: germanium. power transistors 150 T03/ See Pg. 147 for outline d PNP ALLOY TRANSISTORS 10.0 Amp BREAKDOWN VOLTAGES TYPE NUMBER V eB 2N677 2N677A 2N677B 2N677C 2N678 2N678A 2N678B 2N678C 2N1031 2N1031A 2N1031B 2N1031C 2N1032 2N1032A 2N1032B 2N1032C 2N1120

D2N203LE

Abstract: D2N203LD WT 60 PI D2N103LD D2N103LE
Contextual Info: ¡Arms ^ ^ (ü lV rm s m A C 'J U — % D 2N103LD 2N103LE (C F U + A ft/fc D 2N203LD D 2N203LE U L : E69031 *tfêNO. CSA : LR48894 (Ü»(iP.30) TÜV : R75Î68 f i : (Iti) 10g Ü % * UL % ± m CSA M 5Ë on T U V s o O O o O O O o O O o D 2N I03LD D 2 N I0 3 LE

Contextual Info: 2N1039+JAN Transistors Ge PNP Power BJT Military/High-RelY V BR CEO (V)60º V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)100# I(CBO) Max. (A)125u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)1.0

Contextual Info: 2N103 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)35 I(C) Max. (A)10m Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)4.5 h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2N1036 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).30 @I(C) (A) (Test Condition)8.0m

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N1203

Abstract: pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N173 2N511
Contextual Info: m . •■_ Môb^EMb 0000213 7 ^ ;3 3 " ° ¡ H J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d g e rm a n iu m pow er tra n sisto rs T»P» Polarity Power Dissipation

OC26 transistor

Abstract: 2N301 OC30 OC26 2n2430 OC36 transistor 2N1010 OC25 germanium transistors NPN t01 transistor
Contextual Info: 0DQD14E S I T 3 3 -0 e! DIODE TRANSISTOR CQ.1 \IC. GERMANIUM NPN LOW POWER TRANSISTORS DEVICES PKG (201 686-0400 • Tb Ioxl 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4561 hAA FAX NO. No. 2U1-S7!>-58e3 201*575*5863 _ 2N35 2N78 2N94 2N97 2N98

2N1384

Abstract: 2N993 2N1516 2N1151 2N1378 2N1034 2N1036 2N1150 2N1037 2N1046
Contextual Info: D Ì G I T R O N E L E C T R O N I C CO RP 3bE D WM T W Ë DGE -p.'J 7 2flMHt.07 O G O O O D B Page MQITKON ELECTRONIC” CORP 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax JDHN J. S C H W A R T Z ENGINEERING DIGITRON ELECTRONICS, CORP

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

DTG110B

Abstract: TO36 package pnp germanium to36 TO41 package Germanium DTG-2400 DTG600 2N2081A TO41 DTG2400
Contextual Info: POWER GERMANIUM TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO Of) PD Max hFE fT ON) Min (Hz) r •CBO Max Max (A) (8) (CE)sat •Oper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .

2N1146

Abstract: GERMANIUM* 2n1099 2N1100 2N1557 2N1358 2N1558 2N278 TO36 2N1031B 2N1982
Contextual Info: 55 GERM ANIUM POWER TRANSISTORS CURREIV JT G A IN S A T U R A T IO IM V O LT A G E S @ T Y PE N U M BER C A SE T YPE V CBO V 15 AIV P G E mm 2N278 2N677 2N677A TO-36 TO-3 TO-3 2N677B 2N677C 2N678 V C EO V EBO V UM PIVIP Obse V C ER V ve — i'' V C ES V

2n555

Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V VCE, V yc.o y VCE, V Min. CURRENT C A IN Hfe Yce @ Ic Max. V A SA TURA TION VOL TA GES y Cf * y SF(|) /c @ y y A A 9j-c aC /W 3 AMP GERMANIUM PNP CA2D2 2N155 2N176 2N235A 2N236A MT-36 TO-3 TO-3

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

RS-274-D

Abstract: facit N4000 allen bradley 5572 pclos 40N04 5609 dec BYY10 ABS Wheel Speed Sensor LT 5252 LT 5251
Contextual Info: Allen-Bradley 9/Series CNC Grinder Operation and Programming Manual Important User Information Because of the variety of uses for the products described in this publication, those responsible for the application and use of this control equipment must satisfy themselves that all necessary steps have been taken