2N124 Search Results

Contextual Info: 2N1249 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V)6.0 I(C) Max. (A)5.0m Absolute Max. Power Diss. (W)30m Maximum Operating Temp (øC)155þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

AD166

Abstract: AD262 AD263 2N256 2N4241 2N2066 2N1202 2n2148 2N2U germanium
Contextual Info: POWER GERMANIUM PNP Item Number Part Number • 10 >= 20 AD262 2N663 2N1245 2N1246 OC25 AD263 AD263 2N1971 I C 25 30 40 MP1534 2N378 2S8493 2S8493 2N2064A 2N1539A 2N3311 2N4241 2S8493W ~:;11~: 45 50 2N1544A 2N3314 MP1530 2N1529 2N1529A 2N3215 MP1535 2N1534

Contextual Info: 2N1242A Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)90 I(C) Max. (A)100m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1242 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m

Contextual Info: 2N1243 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m

Contextual Info: 2N1247 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V)6.0 I(C) Max. (A)5.0m Absolute Max. Power Diss. (W)30m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)5.0n @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1244 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)110 V(BR)CBO (V)110 I(C) Max. (A) Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m

Contextual Info: 2N1240 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)12 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m

Contextual Info: 2N1248 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V)6.0 I(C) Max. (A)5.0m Absolute Max. Power Diss. (W)30m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1241 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m

Contextual Info: 2N124 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)10 I(C) Max. (A)8.0m Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)2.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.20 h(FE) Max. Current gain.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2n1243

Abstract: 2N1242 PB6025A bsv82 HA7528 2SA13590 2SA1361 TO4 package 2SB9050 2n1239
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 20 Ic Max (A) V(BR)CEO (V) fT hFE Min Max (Hz) ICBO Max (A) tr Max (8) tf Max (8) Po Max (W) Toper Max (Oe) Package Style >= 50 A, (Cont'd) SDT3901 SDT3602 SDT3602 SDT3902 SDT3902 SDT3902 MJ14001 SDT3603

D634 transistor

Abstract: 2N907 PNP 2sa648 transistor STC5202 2SA614 2SA616 2SA653 2P424 SE9573 B0536
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

OC26 transistor

Abstract: 2N301 OC30 OC26 2n2430 OC36 transistor 2N1010 OC25 germanium transistors NPN t01 transistor
Contextual Info: 0DQD14E S I T 3 3 -0 e! DIODE TRANSISTOR CQ.1 \IC. GERMANIUM NPN LOW POWER TRANSISTORS DEVICES PKG (201 686-0400 • Tb Ioxl 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4561 hAA FAX NO. No. 2U1-S7!>-58e3 201*575*5863 _ 2N35 2N78 2N94 2N97 2N98

uPD70F3548

Abstract: uPD70F3554 uPD70F3558 uPD70F3550 uPD70F4002 v850e2 Fx4 uPD70F3551 uPD70F35 uPD70f4010 V850E2 FK4
Contextual Info: User Manual 32 Preliminary Document V850E2/Fx4 32-bit Microcontroller V850E2/FG4 V850E2/FJ4 V850E2/FK4 V850E2/FL4 µPD70F3548 µPD70F3549 µPD70F3550 µPD70F3551 µPD70F3552 µPD70F3553 µPD70F3554 µPD70F3555 µPD70F3556 µPD70F3557 µPD70F3558 µPD70F3559

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

2n2301

Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
Contextual Info: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

2N1855

Abstract: 0E-18 2N1025 2n936
Contextual Info: jo m itr o n io r s e m ic o n d u c t o r s s s Sem itronics Corp. silicon transistors silicon small signal transistors general purpose — alloy Typ« Polarity Power Dissipation @ 25°C mW (°C) BV c b o (volts) 2N3298 2N330A 2N923 2N924 2N925 2N926 2N927

2N7805

Abstract: gw 340 diode t03 package transistor pin configuration 32N03 DTG2400 DTG-2400 2N2144A 2N1100 2N126 2n228 transistor
Contextual Info: CY7C1339 128K x 32 Synchronous-Pipelined Cache RAM Features The CY7C1339 I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V tolerant when V DDq=2.5V. * Supports 100-MHz bus fo r Pentium and PowerPC operations w ith zero w ait states

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200