2N171 Search Results

2N718

Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for

2N2389

Abstract: 2N2390 2N1711 Texas Instruments TI424
Contextual Info: TYPES 2N2389, 2N2390 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 4 6 0 2 7 , O C T O B E R 1 9 6 4 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS FROM <0.1 ma to >150 mo, dc to 30 Me Formerly TI424 and TI425 * Electrically Similar to 2N1613 and 2N1711

transistor 2n1711

Abstract: 2N1711 BP317 st 2n1711 "2N1711" 2N1711 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification NPN medium power transistor

2N310B

Abstract: 2N2270
Contextual Info: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*

2N1711

Contextual Info: 2N1711 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

transistor 2N1711

Abstract: 2N1711 cdil 2N1711 2N1711 Data Sheet equivalent transistor 2N1711 RS510
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package N-P-N Double Diffused Transistor in a TO-39 Metal Package for a Wide Variety of Applications Such As d.c. and Wideband Amplifiers.

Contextual Info: N AMER P H I L I P S / D I S C R E T E D BSE • T~-2’7~0I bl3S3T31 D O l b n a S ■ Small Signal Devices GENERAL PURPOSE AND SWITCHING TRANSISTORS - NPN TYPES TYPE PKG . bvc eo - te . • ^ /- : *T r >c - i _-iiiln : 2N1613 2N1711 2N1893 2N2218 2N2219

2N2243

Abstract: 2n2405
Contextual Info: Medium Power Amplifiers and Switches TYPE PO LA ­ CASE NO. RITY 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N1973 2N1974 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B

2N1711

Abstract: 2N1890 equivalent transistor 2N1711 transistor 2N1711 2N171-1 MIL-PRF-19500/225
Contextual Info: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices Qualified Level 2N1711 JAN JANTX 2N1890 MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C 1 @ TC = +250C (2)

2N1711

Abstract: 2N956 2N718A X10-4 2N1711N
Contextual Info: 2N718A 2N956 M A X IM U M R ATINGS Rating Symbol 2N718A 2N956 2N1711 CASE 22-03, STYLE 1 TO-18 TO-206AA Unit C o lie ctor-E m itter V o ltage VCER 50 Vdc Collector-Base V o ltage v CBO 75 Vdc E m itter-Base Voltage Ve bo 7.0 3 , 3 C o lle c to r Vdc Total Device D issipation @ TA = 25°C

2N1716

Abstract: 2N3738 2N3879 2N3767
Contextual Info: BIPOLAR bvceo VOLTS / T0-205 T° -5 ^ nr TO-213 (TO-66) ( •- 1m 4t} PEAK ■c AMPS hFE min/max < DEVICE TYPE < o m PACKAGE o NPN MESA POWER TRANSISTORS VCE (sat) max VOLTS ■c @ ' b A A 2N1714* 60 0.75 20 min 0.2/5.0 2.0 0.2/0.02 2N1715* 100 0.75 20 min

2n1716

Contextual Info: 2N1716 Si NPN Lo-Pwr BJT 6.21 Transistors Transistors Bipolar Si NPN Low-Power Bi. Page 1 of 1 Enter Your Part # Home Part Number: 2N1716 Online Store 2N1716 Diodes Si N P N Lo -Pw r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

power BJT

Contextual Info: 2N1719 Si NPN Power BJT 29.21 Transistors Transistors Bipolar Si NPN Power Transist. Page 1 of 1 Enter Your Part # Home Part Number: 2N1719 Online Store 2N1719 Diodes Si NPN Power BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

2N1717

Contextual Info: 2N1717 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)

Contextual Info: 2N1711 SILICON NPN TRANSISTOR DESCRIPTION: PACKAGE STYLE TO- 39 The ASI 2N1711 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS IC 1.0 A VCBO 75 V PDISS 800 mW @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C

2N1711 MOTOROLA

Abstract: 2N1711 transistor 2n1711 2N1711 M 2N1711D "2N1711"
Contextual Info: MOTOROLA Order this document by 2N1711/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon 2N1711 COLLECTOR 3 2 BASE 1 EMITTER ARCHIVE INFORMATION Rating Symbol Value Unit Collector – Emitter Voltage VCER 50 Vdc Collector – Base Voltage

Contextual Info: 2N1711 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1711 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE

4116 2n

Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
Contextual Info: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE

2N1711

Contextual Info: 2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.

2N2222 - to-92

Abstract: 2N2222A TO-92 JC547 2n2222 to92 2N2222 2N3904 TO-92 type JC500, Jc501
Contextual Info: Small Signal Leaded Devices General Purpose and Sw itching Transistors - NPN Types bvceo •c c 3 hFE lc Type Pkg (V (mA) min max (mA) 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2369A 2N3019 2N3020 2N3053 2N3904 2N4123 2N4124

Contextual Info: 2N1717+JANTX Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)150 I(C) Max. (A)750m Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)200m

2N1716

Abstract: 2N3584 NPN 2N3767 JANTX 2N3740 2N1716 JANTX TO-213
Contextual Info: A POW ERHOUSE BIPOLAR T0-205 TO-5 Ä / AMPS < o m VOLTS hFE min/max o •c VCE (sat) max VOLTS 'C @ ! b A A 2N 1714" 60 0.75 20 min 0.2/5.0 2.0 0.2/0.02 2N 1715’ 100 0.75 20 min 0.2/5.0 2.0 0.2/0.02 2N1716 60 0.75 40 min 0.2/5.0 2.0 0.2/0.02 2N1717* 100

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N1711 TO-39 Metal Can Package N-P-N Double Diffused Transistor in a TO-39 Metal Package for a Wide Variety of Applications Such As d.c. and Wideband Amplifiers.

Contextual Info: 1 1 1 ESSOELECTRONICS, INC. PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES ì 1 ] ] ] 1 1 11 1 1 1 fl 1 1 Device No 2N1252 2N1253 2N1506 2N1506A 2NX714 2N1715 2N1716 2N1717 2NX718 2N1719 2N1720 2N1721 2N1B89 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989