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    2N2432 Price and Stock

    Microchip Technology Inc 2N2432

    TRANS NPN 30V 0.1A TO18
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    Microchip Technology Inc 2N2432UB

    TRANS NPN 30V 0.1A UB
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    Microchip Technology Inc 2N2432AUB

    TRANS NPN 45V 0.1A UB
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    Microchip Technology Inc JAN2N2432

    TRANS NPN 30V 0.1A TO18
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    Microchip Technology Inc JAN2N2432A

    TRANS NPN 45V 0.1A TO18
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    2N2432 Datasheets (47)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2432 Microsemi BJT, NPN, Low Power Transistor, VCB0 30V, IC 0.1A - Pol=NPN / Pkg=TO18 / Vceo=30 / Ic=0.1 / Hfe=50min / fT(Hz)=20M / Pwr(W)=0.3 Original PDF
    2N2432 Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=30 / Ic=0.1 / Hfe=50min / fT(Hz)=20M / Pwr(W)=0.3 Original PDF
    2N2432 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2432 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2432 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N2432 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N2432 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N2432 Unknown Vintage Transistor Datasheets Scan PDF
    2N2432 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2432 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2432 Unknown GE Transistor Specifications Scan PDF
    2N2432 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2432 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2432 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2432 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2432 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2432 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2432 New England Semiconductor SMALL SIGNAL NPN TRANSISTOR TO-18 Scan PDF
    2N2432 Semelab Transistor Selection Guide Scan PDF
    2N2432 Semelab Bipolar Transistors (CECC and High Rel) & High Energy Scan PDF

    2N2432 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2432 JANTXV

    Abstract: 2N2432
    Text: 2N2432 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


    Original
    PDF 2N2432 O206AA) 2-Aug-02 2N2432 JANTXV 2N2432

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


    Original
    PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251

    2n2432

    Abstract: No abstract text available
    Text: TECHNICAL DATA 2N2432 JAN, JTX, JTXV 2N2432A JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/313 NPN SILICON SMALL-SIGNAL TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Collector Current


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    PDF 2N2432 2N2432A MIL-PRF-19500/313 2N2432 2N2432A

    Untitled

    Abstract: No abstract text available
    Text: 2N2432+JANTX Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V).15 @I(C) (A) (Test Condition)10m


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    PDF 2N2432 Freq20M

    2N2432A

    Abstract: No abstract text available
    Text: 2N2432A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


    Original
    PDF 2N2432A O206AA) 2-Aug-02 2N2432A

    2N2432A

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/ 313 Devices Qualified Level JAN JANTX JANTXV 2N2432 2N2432A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Collector Current Total Power Dissipation


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    PDF MIL-PRF-19500/ 2N2432 2N2432A 2N2432A

    Untitled

    Abstract: No abstract text available
    Text: 2N2432 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


    Original
    PDF 2N2432 O206AA) 16-Jul-02

    2N2432

    Abstract: 2N2432A
    Text: Back to Bipolar Small Signal TECHNICAL DATA 2N2432 JAN, JTX, JTXV 2N2432A JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/313 NPN SILICON SMALL-SIGNAL TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage


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    PDF 2N2432 2N2432A MIL-PRF-19500/313 2N2432 2N2432A

    Untitled

    Abstract: No abstract text available
    Text: 2N2432 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V).15 @I(C) (A) (Test Condition)10m


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    PDF 2N2432 Freq20M

    Untitled

    Abstract: No abstract text available
    Text: 2N2432A+JANTXV Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V).15 @I(C) (A) (Test Condition)10m


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    PDF 2N2432A Freq20M

    Untitled

    Abstract: No abstract text available
    Text: 2N2432+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V).15 @I(C) (A) (Test Condition)10m


    Original
    PDF 2N2432 Freq20M

    Untitled

    Abstract: No abstract text available
    Text: 2N2432A+JANS Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V).15 @I(C) (A) (Test Condition)10m


    Original
    PDF 2N2432A Freq20M

    Untitled

    Abstract: No abstract text available
    Text: 2N2432 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


    Original
    PDF 2N2432 O206AA) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N2432A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


    Original
    PDF 2N2432A O206AA) 16-Jul-02

    2n2432a

    Abstract: 2n2432
    Text: TYPES 2N2432, 2N2432A. ü4 « N-P-N SILICON TRANSISTORS B U L L E T IN NO. DL-S 6 8 9 0 7 9 , O C T O B E R 1 9 6 6 - R E V I S E D J A N U A R Y 1 9 6 8 FOR LOW-LEVEL, HIGH-SPEED CHOPPER APPLICATIONS IN INVERTED CONNECTION • Low Offset Voltage. . 0.4 mV Max 2N2432A


    OCR Scan
    PDF 2N2432, 2N2432A. 2N2432A) 2N2432 2N2432A 2N4138

    2N4136

    Abstract: 2N2432
    Text: M ILITA R Y APPROVED LOW LEVEL - HIGH SPEED ‘ 2N24322N2432A 2N4136 SILICON EPITAXIAL JUNCTION NPN SWITCHING TRANSISTORS GEOMETRY 485 M. E L E C T R IC A L D A T A J m i {A B SO LU T E M AXIM U M R A T IN G S ! P AR AM ETE R SYM BO L 2N2432/4138 2N2432A


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    PDF 2N2432 2N2432A 2N4136 2N2432/4138 2N4136 2N2432

    2N2432A

    Abstract: 2n4138 2N243
    Text: TYPES 2*2432, 2N2432A, 2N4138 N-P-N SILICON TRANSISTORS BU LL ET IN NO. DL-S 6S9079, OCTOBER 1 9 6 6 -R E V lS E D JA N U A R Y 1968 FOR LOW-LEVEL, HIGH-SPEED CHOPPER APPLICATIONS IN INVERTED CONNECTION • Low Offset Voltage. . . 0.4 mV Max 2N2432A • low Iecs. . . 2 nA Max


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    PDF 2N2432A, 2N4138 6S9079, 2N2432A) 2N2432 2N2432A 2N243

    Untitled

    Abstract: No abstract text available
    Text: Web site: WWW.Crystalonics.com Phone: Fax: 631 585 4858 631- 981- 6140 ( - - ) * See price list for ordering information J ir v . 2N2432A LOW LEVEL - HIGH SPEED NPN SWITCHING TRANSISTORS • • • < •• • . • v> vJ ^ . . -’v^ - “ i\ • v •?*3<A


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    PDF 2N2432A

    IC LA 4138

    Abstract: 2n343
    Text: M IL IT A R Y APPROVED LOW LEVEL - HIGH SPEED ‘ 2N24322N2432A S ILIC O N E P IT A X IA L JU N C TIO N NPN SW ITCH IN G T R A N S IS T O R S 2N4138 •AVAILABLE AS JAN. JAN-TX. JAN-TXV. JAN-S GEOMETRY 485 E L E C T R IC A L D A T A IA 8 S O I.U T I M A X IM U M M A T IN G S


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    PDF 2N2432 2N2432A 2N4138 i40kH T1779 IC LA 4138 2n343

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTO R T O -18 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS TO-18 T0206AA 2N706 2N718 2N930 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369 2N2369A 2N3227 2N2432 2N2432A 2N2481 2N2484 2N2895 2N2896 2N2897 2N3302


    OCR Scan
    PDF T0206AA 2N706 2N718 2N930 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369

    Untitled

    Abstract: No abstract text available
    Text: m 2N2432 \ \ SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N2432 is Designed for Low Level High Speed Chopper Applications and is Used Inverted. lc 100 mA O m < MAXIMUM RATINGS 30 V P diss 600 mW @ Tc = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C


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    PDF 2N2432 2N2432

    2N2432A

    Abstract: JAN-2N2432A 2N2432 2N4138 JAN-2N2432
    Text: M I L IT A R Y APPROVED LOW LEVEL - HIGH SPEED JAN-2N2432 JAN-2N2432A 2N4138 SILICON EP ITA XIAL JUNCTION NPN SWITCHING TRANSISTORS A V A IL A B L E AS JA N -T X AND J A N -T X -V GEOMETRY 41, PG. 57 ELECTRICAL D A TA ABSOLUTE M AXIM UM RATINGS PARAM ETER


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    PDF JAN-2N2432 JAN-2N2432A 2N4138 2N2432/4138 2N2432A 2N2432 2N4138

    2N2432

    Abstract: 25VVC
    Text: 2N2432 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N2432 is Designed for Low Level High Speed Chopper Applications and is Used Inverted. PACKAGE STYLE TO-18 1OO mA 3O V o m Ie < MAXIMUM RATINGS pd is s Tj "OO mW @ Te %25 °C Ts t g -"5 0C to +2OO 0C


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    PDF 2N2432 2N2432 25VVC

    to48c

    Abstract: IC LA 4138 TO-48C LA 4138 2N2432A TELEDYNE
    Text: TELEDYNE COMPONENTS aaE T - s r - i : 0T17bG2 GQObSfiH D D M ILITARY APPROVED LOW LEVEL - HIGH SPEED *2N24322N2432A 2N4138 SILICON E PITA XIA L JUNCTION NPN SWITCHING TRANSISTORS * AVAILABLE AS JAN, JAN-TX, JAN-TXV, JAN-S GEOMETRY 485 E LEC T R IC A L DATA


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    PDF 0T17bG2 2N2432 2N2432A 2N4138 2N2432/4138 flT17i a00b5 to48c IC LA 4138 TO-48C LA 4138 2N2432A TELEDYNE