2N2432 JANTXV Search Results

Contextual Info: 2N2432 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

2N2432A

Abstract: 2N2432
Contextual Info: TECHNICAL DATA NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/313 Devices Qualified Level JAN JANTX JANTXV 2N2432 2N2432A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Collector Current Total Power Dissipation

2N2432A

Contextual Info: TECHNICAL DATA NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/ 313 Devices Qualified Level JAN JANTX JANTXV 2N2432 2N2432A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Collector Current Total Power Dissipation

Contextual Info: 2N2432 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

2N2432 JANTXV

Abstract: 2N2432
Contextual Info: 2N2432 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

to48c

Abstract: IC LA 4138 TO-48C LA 4138 2N2432A TELEDYNE
Contextual Info: TELEDYNE COMPONENTS aaE T - s r - i : 0T17bG2 GQObSfiH D D M ILITARY APPROVED LOW LEVEL - HIGH SPEED *2N2432 ‘ 2N2432A 2N4138 SILICON E PITA XIA L JUNCTION NPN SWITCHING TRANSISTORS * AVAILABLE AS JAN, JAN-TX, JAN-TXV, JAN-S GEOMETRY 485 E LEC T R IC A L DATA

Contextual Info: 2N2432+JANTXV Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V).15 @I(C) (A) (Test Condition)10m

IC LA 4138

Abstract: 2n343
Contextual Info: M IL IT A R Y APPROVED LOW LEVEL - HIGH SPEED ‘ 2N2432 •2N2432A S ILIC O N E P IT A X IA L JU N C TIO N NPN SW ITCH IN G T R A N S IS T O R S 2N4138 •AVAILABLE AS JAN. JAN-TX. JAN-TXV. JAN-S GEOMETRY 485 E L E C T R IC A L D A T A IA 8 S O I.U T I M A X IM U M M A T IN G S

2N2432

Abstract: 2N2432A chip die npn transistor
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 27 May 2002. MIL-PRF-19500/313F 27 February 2002 SUPERSEDING MIL-PRF-19500/313E 18 August 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER

2N2432A

Abstract: 2N2432AUB 2N2432
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by.18 April 2006. MIL-PRF-19500/313H 18 January 2006 SUPERSEDING MIL-PRF-19500/313G 14 DECEMBER 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER,

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

2N3810 LCC

Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
Contextual Info: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *