Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N2474 Search Results

    2N2474 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2474 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2474 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2474 Unknown GE Transistor Specifications Scan PDF
    2N2474 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2474 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2474 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N2474 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N2474 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N2474 Transistors Bidirectional Transistor No. of Units Per Package1 V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.8.0 h(FE) Max. Current gain. @I(C) (A) (Test Condition)100u


    Original
    PDF 2N2474

    2N2458

    Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386


    Original
    PDF 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2N479 2N479A 2N2458 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253

    2N2464

    Abstract: 2N2240 2N2655 TO206AA 2C6090 2N2538 2N2201 2N2203 2N1945 2N2453
    Text: STI Type: 2N1945 Notes: Polarity: NPN Power Dissipation: 600m Tj: VCBO: VCEO: 30 hFE min: hFE max: hFE A: VCE: VCE A: hfe: fT: Case Style: TO-205AD/TO-39: Industry Type: 2N1945 STI Type: 2N1958A Notes: Polarity: NPN Power Dissipation: 600m Tj: VCBO: VCEO: 40


    Original
    PDF 2N1945 O-205AD/TO-39: 2N1958A 2N1959A 2N1973 2N2464 2N2240 2N2655 TO206AA 2C6090 2N2538 2N2201 2N2203 2N1945 2N2453

    2N2458

    Abstract: TRF648 sgs-ates transistors FBase-F Package 2N2425 2N2455 westcode diode 2n2534 2n2474 2N2431
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 55 Ie Max (A) Westcode Westcode MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec Marcomclec MarconiElec MarconiElec MarconiElec MarconiElec


    Original
    PDF

    2n3035

    Abstract: 2N1994 bls100 2N1169 500HM ST5610 BLS100 siliconix
    Text: ADDITIONAL TRANSISTORS Item Number Part Number Manufacturer PolarIty Mati. Description Package Style Avalanch Transistors CK273 2N3033 2N3034 2N3035 2N5271 ASZ23 5 SemiconTech See Index See Index See Index See Index NthAmerSemi NPN NPN NPN NPN NPN PNP Si Si


    Original
    PDF CK273 2N3033 2N3034 2N3035 2N5271 ASZ23 BVCBO-25V. Pt-300mW BVCBO-160V IC-10A 2N1994 bls100 2N1169 500HM ST5610 BLS100 siliconix

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan
    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan
    PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan
    PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan
    PDF

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


    OCR Scan
    PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan
    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    AC127

    Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
    Text: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any


    OCR Scan
    PDF 2N24A 2N34A 2N38A 2N43A 2N44A 2N59C 2N60A 2N61A 2N61B OC77-309, AC127 CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278