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    TRANSISTOR,BJT,PNP,90V V(BR)CEO,3A I(C),CAN
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    2N2661 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2661 Diode Transistor 3 AMP Germanium PNP Transistors Scan PDF
    2N2661 Diode Transistor Silicon Transistors Scan PDF
    2N2661 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N2661 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2661 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N2661 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2661 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2661 Unknown GE Transistor Specifications Scan PDF
    2N2661 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2661 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N2661 Unknown Vintage Transistor Datasheets Scan PDF
    2N2661 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2661 Silicon Transistor JAN / Consumer / Military / Industrial / Automotive / Hi-Rel Scan PDF

    2N2661 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MP2145

    Abstract: AD149 AD148 2s812 2N2068-0 2N1437 OC26 germanium 2N256 m945
    Text: POWER GERMANIUM PNP Item Number Part Number I C •5 · 10 >= MP2145 2N2145 2N2145A 2N618 2N268A 2N20680 2N3161 MP2141 2N2141 2N2141A ~1~~~ 20 MP2146 2N2146 2N2146A 2N1761 2N3157 2N2660 2N2663 2N2666 · ~~~~~2 15 · 25 30 2N1758 2N1362 2N1363 2N1762 ADl63


    Original     		PDF MP2145 2N2145 2N2145A 2N618 2N268A 2N20680 2N3161 MP2141 2N2141 2N2141A AD149 AD148 2s812 2N2068-0 2N1437 OC26 germanium 2N256 m945

    2N2660

    Abstract: No abstract text available
    Text: 2N6660/2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N6660 and 2N6661 are enhancementmode normally-off transistors that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate


    Original     		PDF 2N6660/2N6661 2N6660 2N6661 DSFP-2N6660 2N6661 A021307 2N2660

    2N2648

    Abstract: BC107BP 2N2709 delco 2N2606 2N3247 2N2646 texas 2N2624 2N2611 2N2601
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 BCX59-7 BC107AP BC560 BCY59 BCY59VII BC582 BC582 BC582 2N3043 2N3044 2N304:, 2N2642 2N2643 2N2644 JC501P BCY76 BCY76 MD2974


    Original     		PDF BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 2N2648 BC107BP 2N2709 delco 2N2606 2N3247 2N2646 texas 2N2624 2N2611 2N2601

    2N2659

    Abstract: 2N2660 2N2662 2N2665 2N2664 2N2668 Germanium Transistor Texas Germanium 2N2667 c 2665 transistor
    Text: TYPES 2N2659, 2N2660, 2N2661, 2N2662, 2N2663, 2N2664 2N2665, 2N2666, 2N2667, 2N2668, 2N2669, 2N2670 _P-N-P AUOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS m < * 2 c- 5 ¡1 5 50-, 70», or 9 0 -VOLT UNITS Guaranteed l« x at 85°C ° * 2 15 WATTS at 2 5 'C CASE TEMPERATURE


    OCR Scan     		PDF 2N2659, 2N2660, 2N2661, 2N2662, 2N2663, 2N2664 2N2665, 2N2666, 2N2667, 2N2668, 2N2659 2N2660 2N2662 2N2665 2N2668 Germanium Transistor Texas Germanium 2N2667 c 2665 transistor

    2N1602

    Abstract: 2n1649 2N893 2N6241 2nu8 2N6401 2N2679 2n4327 2N3228 2n4146
    Text: INTEX/ SEMITRONICS CORP 27E D HöbTEML. 0 0 0031=1 jGmrcron SEMICONDUCTORS T '- ä $ - 'O l 3 discrete devices Semitronics Corp. thyristors and triggers silicon controlled rectifiers Forward current Maximum Junction Temperature CC Mw. DC Cate Trinar Current


    OCR Scan     		PDF 2N682 2N685 T0-48 2N686 2N687 2N688 2N889 2N690 2N764* 2N765Â 2N1602 2n1649 2N893 2N6241 2nu8 2N6401 2N2679 2n4327 2N3228 2n4146

    2n555

    Abstract: No abstract text available
    Text: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V VCE, V yc.o y VCE, V Min. CURRENT C A IN Hfe Yce @ Ic Max. V A SA TURA TION VOL TA GES y Cf * y SF(|) /c @ y y A A 9j-c aC /W 3 AMP GERMANIUM PNP CA2D2 2N155 2N176 2N235A 2N236A MT-36 TO-3 TO-3


    OCR Scan     		PDF 2N155 2N176 2N235A 2N236A MT-36 2N236B 2N242 2N255 2N256 2N268 2n555

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    LS 74151

    Abstract: 2N555 MT27 220 hfk 2N176 Germanium Power Devices MT-27 2N2553 2N297A 2N155
    Text: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V yc.o CA2D2 2N155 2N176 2N235A 2N236A 2N236B 2N242 2N255 2N256 2N268 2N285A 2N285B 2N297A 2N375 2N392 2N399 2N538 2N538A 2N539 2N539A 2N540 2N540A 2N554 2N555 2N618 2N1359 2N1360 2N1362 2N1363


    OCR Scan     		PDF MT-36 2N155 2N176 2N235A 2N236A 2N236B 2N242 2N255 2N256 2N268 LS 74151 2N555 MT27 220 hfk Germanium Power Devices MT-27 2N2553 2N297A

    2N1100

    Abstract: transistor t03 germanium transistor pnp 2n277 2N1100 Power Transistor 2N4277 2N4280 2N5440 2N1039 2n2912 2N2555
    Text: TTTUTFE TTTÆWYrSTTJT^ CO TNC i fi4D D | 2 Û 4 fi3 5 2 □□□□141 7 " - 3 3 - off 3 f DIODE Tfldl\l515TQR CQ.,lf\JC. • “ J ~ 2011686-0400 • Telex: 139-365 * O u ts id e NY & NJ area c a ll t o l l f r e e 8005zs*4aai / g e r m a n iu M p n p h ig h p o w e r t r a n s i s t o r s


    OCR Scan     		PDF DDDD141 2N58A 2N1073 2N2158 2N5325 2N143/13 2N1073A 2N2158A 2N5435 2N174A 2N1100 transistor t03 germanium transistor pnp 2n277 2N1100 Power Transistor 2N4277 2N4280 2N5440 2N1039 2n2912 2N2555

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


    OCR Scan     		PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


    OCR Scan     		PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    2N8402

    Abstract: SN232 2n883 mi SN2014 2n4146 2N3560
    Text: INTEX/ SEMITRONICS CORP 27E D HöbTEML. 0 0 0031=1 jGmrcron SEMICONDUCTORS T 3 '- ä $ - 'O discrete devices Semitronics Corp. thyristors and triggers silicon controlled rectifiers Forward current 1 44 l (»m p») Max. Forward Max. R ev in t Voltate» Vfo m / V hom


    OCR Scan     		PDF

    STA6047

    Abstract: 2N1038 2n1039 LS 74151 2n2665 2N2661 germanium transistors NPN STA6048 STA9860 STA9861
    Text: silicon power transistors NPN TO-63 cont’d C(M AX) = 10 to 30A VcEO(SUS) = f T = 0.6 to 30 MHz 60 to 350V Is/b to F F tO N @ VcE ICEV Pd @ VcE(SAT) @ Ic/VcE Vbe t = 1sec Generic T r=100°c @ Ic/Ib d jc @ I c / Ib @ VCE fT (Min-Max @ I c / Ib @ Ic/VcE VcEO|SUS|


    OCR Scan     		PDF STAE046 STA6047 STA6048 2N2564 2N2565 2N2566 2N2567 2N2659 2N2660 2N2661 2N1038 2n1039 LS 74151 2n2665 germanium transistors NPN STA6048 STA9860 STA9861

    2N1100 Power Transistor

    Abstract: DTG-2400 2n4280 germanium transistor pnp 2n277 2N2912 2n58a DTG2400 2N2567 2n1039 2N5435
    Text: TTTUTFE TTTÆWYrSTTJT^ CO TNC i fi4D D | 2 Û 4 fi3 5 2 □□□□141 7 " - 3 3 - off 3 f DIODE Tfldl\l515TQR CQ.,lf\JC. • “ J ~ 2011686-0400 • Telex: 139-365 * O u ts id e NY & NJ area c a ll t o l l f r e e 8005zs*4aai / g e r m a n iu M p n p h ig h p o w e r t r a n s i s t o r s


    OCR Scan     		PDF DDDD141 2N58A 2N1073 2N2158 2N5325 2N143/13 2N1073A 2N2158A 2N5435 2N174A 2N1100 Power Transistor DTG-2400 2n4280 germanium transistor pnp 2n277 2N2912 DTG2400 2N2567 2n1039