2N2906 SIS Search Results

tn-59

Abstract: 2222 NPN N 2222 2N2221 2N2221A 2N2222A 2N2369 2N2906 2N2906A 2N2907
Contextual Info: A/Ietal-Encased SPRAGUE Silicon SEPT T ran sistors HIGH-SPEED, MEDIUM CURRENT Type No. 2N2221 2N2221A 2N2222 2N2222A 2N2369 2N2906 2N2906A 2N2907 2N2907A 2N3115 2N3116 2N3135 2N3136 TN-54 TN-60 TN-62 TN-64 TQ-60 TQ-62 TQ-64 2N1469 2 N1469A 2N2218 2N2218A

itt 2907A

Abstract: st 2n 2907a 2N2905 MOTOROLA itt 2907 2N2907A itt 2n2222 2n2907 Motorola st 2n 2905a 2N3485 2N2907 2N2907A
Contextual Info: MOTORCLA SC XSTRS/R F 12E D I b3fc.72S4 G0flb57fci 5 | PNP SILICON AN N U LAR HERMETIC TRAN SISTO RS 2N2904, A thru . . designed for high-speed sw itching circuits, D C to V H F amplifier applica­ tions and com plem entary circuitry. 2N2907, A 2N3485, A, 2N3486, A

tpq2907

Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 S P R A GU E. T3 D • 05G433Ô GGD3ÔD7 3 ■ ALGR S E M I C O N D S / ICS 93 D 0 3 8 0 7 3 SE R IE S TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O P R A G U E SERIES TPQ quad transistor arrays ^ are general-purpose silicon tran sisto r arrays

2N3638

Abstract: MPS8093 2N3072 MPS6534 motorola 2N3133 MOTOROLA 2n3638a 2N5221 2n3133 2n3136 2n2907a motorola
Contextual Info: MOTOROLA SC -CDIODES/OPTO} ' 34 ]>F|b3t,75SS 3037^70 H 6367255 M O T O R O L A SC (DIODES/OPTO f 3^C ~ 37978 T^3 7 -/7 SILICO N SM ÂLL-SIG NAL TR A N SISTO R DICE (continued) 2C2907A DIE NO. — pnp LINE SOURCE — DMB151 C« This die provides performance equal to or better than that of the following

2n2907 pnp

Abstract: 2n2222 transistor pin b c e 2n2907 TRANSISTOR PNP MPQ6502 2n2222 npn 2N2906 NPN Transistor 2N2907 2N2221 2N2222 2N2906
Contextual Info: Central Sem iconductor Corp. Central Sem iconductor Corp. central sem iconductor Corp. 1 I 1 1 M P Q 6501 M P Q 6502 C OM PLEMENTARY QUAD T R A N SISTOR ♦I JEDEC T O - 116 CASE 145 Adam s Avenue Hauppauge, New York 11 788 D ESCRIPTION The CENTRAL S EM ICONDUCTOR M P Q 6 5 0 1 , MPQ6502, types are comprised of four independent

2N2907A fairchild

Abstract: 36065E 2N4258 fairchild semiconductors 2N5023 BSX29 2N2894 2N3209 T018 3605SC
Contextual Info: Fairchild Sem iconductors Sem iconductors S ilicon Sm all S ig n a l T ran sisto rs P N P H igh Speed Saturated Sw itching Transistors Metal Can T018, T039 R EFEREN CE T A B L E For medium speed - see générai purpose section C H A R A C T E R I S T IC S

Contextual Info: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR M ED IU M A N D HIGH SPEED SW ITCHING T R A N SIST O R S The d e vice s s h o w n in this table are characterised for medium and high speed sw itchin g applications in C om m ercial, Industrial and M ilitary equipm ents.

TZ554

Abstract: 2n2907 pnp bipolar transistor TZ552 2N4258 TZ554 transistor TZ-82 TZ-81 sprague catalog transistor 2N4258 2N2907 PNP Transistor to 92
Contextual Info: if: iS% V? /p If f BIPOLAR TRANSISTORS • BIPOLARTRANSISTORS S P R A G U E THE M A R K O F RE LIA B ILIT Y SERIES TPP M EDIUM PO W ER DARLINGTON A R R A YS • S pr ague Series T P P devices are m e d i u m- p o we r Darlington arrays, These devices provide c o mpl ement s to Series T P Q quad transistor

ferranti 2N2222A

Abstract: Ferranti ZT84 2N2102 2N3262 2N4036 BCY65E BCY77 BFX84 2N2894 ZT189
Contextual Info: NPN SWITCHING T A B LE 3 - NPN SILICO N PLAN AR MEDIUM AND HIGH SP EED SW ITCH IN G T R A N SIST O R S The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector Current

BC107

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177 BCY59 BCY79
Contextual Info: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100

2n2907 or similar PNP

Abstract: 2N2907 NPN Transistor 2N5859 NPN Transistors 2n2222 npn switching transistor DIL-4 package 2n2222 similar 2N2221 BSE9374 FF2221E
Contextual Info: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS — SILICON PLANAR QUAD TRANSISTORS Devices in this range consist o f four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal am plifica­

6 volt npn

Abstract: DP2907A transistor 60 volt npn transistor 60 volt DN2219A geometry 450
Contextual Info: T R A N S IS T O R C H IP S 1 M E D IU M C U R R E N T PNP 100% Probe Tested to These Parameters @ 25°C MIN 35 MIN 40120 60 30 5 2N 2218A/21A 25 MIN 35 MIN 40120 70 40 6 2N2219/22 50 MIN 75 MIN 100300 60 30 5 2N 2219A/22A 50 MIN 75 MIN 100300 70 40 6 75 100

2N2220

Abstract: 2N2219 transistor 2N2475 2N2218 2N2219 2N2221 2N2222 2N2904 2N2905 2N2906
Contextual Info: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at V hFE at Switching Times (Max) at fjM in at Package lc Ib Min. Max. !c !c mA MHz mA mA mA 25* 175* 150 TO-39 2N2904 25* 200* 150 TO-39 2N2905 20 20* 213* 150 TO-18 150 250 20 25* 175* 150 TO-18

BC107 equivalent transistors

Abstract: 2N2475 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302 BS9365
Contextual Info: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

2N2217

Abstract: KH 2222 ic TT 2222 ip 2222A 2N2218
Contextual Info: TYPES 2N2217 THRU 2N2222. 2N2218A, 2N2219A, 2N2221A, 2N2222A N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L - S 7 3 1 1 9 1 6 , M A R C H 197 3 DESIGN ED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND G EN ER A L PURPOSE A M PLIFIER APPLICATIONS • hFE •• ■Guaranteed from 100 n A to 500 mA

BC238B

Abstract: BC547B bcy58 ZT Ferranti 2N1131 2N1132 2N3053 2N4037 2N696 2N697
Contextual Info: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100

BSX19 equivalent

Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

AC127

Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
Contextual Info: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY