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Abstract: No abstract text available
Text: 2N3019 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3019 Availability Online Store
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2N3019
2N3019
STV3208
LM3909N
LM3909
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2N3019 motorola
Abstract: 2N3700 MOTOROLA motorola 2N3019 2N3019 2N3700 MOTOROLA TO205AD
Text: MOTOROLA Order this document by 2N3019/D SEMICONDUCTOR TECHNICAL DATA General Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N3019 2N3700 NPN Silicon Motorola Preferred Devices 2 BASE 1 EMITTER MAXIMUM RATINGS 2N3019 2N3700 Unit VCEO 80 80 Vdc Collector – Base Voltage
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2N3019/D
2N3019
2N3700
2N3019/D*
2N3019 motorola
2N3700 MOTOROLA
motorola 2N3019
2N3019
2N3700
MOTOROLA TO205AD
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2N3019
Abstract: 2n3019 transistor
Text: Data Sheet No. 2N3019 Generic Part Number: 2N3019 Type 2N3019 Geometry 4500 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/391 Features: • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-5 case.
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2N3019
MIL-PRF-19500/391
MIL-PRF-19500/391
2N3019
2n3019 transistor
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2N3019
Abstract: No abstract text available
Text: 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.
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2N3019
2N3019
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2N3019
Abstract: No abstract text available
Text: 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.
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2N3019
2N3019
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2n3019 equivalent
Abstract: 2N3019 2n3019 transistor
Text: 2N3019 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM
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2N3019
2N3019
2n3019 equivalent
2n3019 transistor
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Abstract: No abstract text available
Text: 2N3019 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. s ct
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2N3019
2N3019
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2N3019
Abstract: 2N301 2N3019-2N3020 2N3020 2N302
Text: 2N3019 2N3020 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high-frequency amplifier applications. They feature high gain and low saturation
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2N3019
2N3020
2N3019
2N3020
2N301
2N3019-2N3020
2N302
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2N3019
Abstract: 2n3019 equivalent 2N3020 2N3019 and applications 2n3019 transistor 2n30201
Text: NPN 2N3019 – 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages.
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2N3019
2N3020
2N3019
2N3020
2n3019 equivalent
2N3019 and applications
2n3019 transistor
2n30201
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2N3019
Abstract: No abstract text available
Text: 2N3019 SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. TO-39 INTERNAL SCHEMATIC DIAGRAM
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2N3019
2N3019
20MHz
P008B
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2n3019 equivalent
Abstract: 2n3019 transistor test 2N3700 "nickel cap"
Text: 2N3019 Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019 NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and
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2N3019
MIL-PRF-19500/391
2N3019
MIL-PRF-19500/391.
T4-LDS-0185,
2n3019 equivalent
2n3019 transistor
test 2N3700
"nickel cap"
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2n3700
Abstract: JTX 2N3019S 2N3700UB 2N3019 2N3700 JAN 2n3057a
Text: TECHNICAL DATA 2N3019 JAN, JTX, JTXV 2N3019S JAN, JTX, JTXV 2N3057A JAN, JTX, JTXV 2N3700 JAN, JTX, JTXV 2N3700UB JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/391 2N3019, 2N3019S TO-39 TO-205AD LOW-POWER NPN SILICON TRANSISTORS MAXIMUM RATINGS
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2N3019
2N3019S
2N3057A
2N3700
2N3700UB
MIL-PRF-19500/391
2N3019;
JTX 2N3019S
2N3700 JAN
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power transistor 2n3020
Abstract: 2N3019 and applications
Text: 2N3019 2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: TA=25°C
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2N3019
2N3020
2N3019,
150mA,
150mA
500mA
20MHz
power transistor 2n3020
2N3019 and applications
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ic str 6707
Abstract: 2n3019 equivalent IC 7430 datasheet datasheet str 6707 str 6707 datasheet IC str 6752 2N3019 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 2N3019 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 19 Philips Semiconductors Product specification NPN medium power transistor
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M3D111
2N3019
MAM317
SCA54
117047/00/02/pp8
ic str 6707
2n3019 equivalent
IC 7430 datasheet
datasheet str 6707
str 6707 datasheet
IC str 6752
2N3019
BP317
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pnp for 2n3019
Abstract: No abstract text available
Text: r ! / 2N3019 2N3020 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES -A 1 S& THE 2N3019, 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033, 2N4031.
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2N3019
2N3020
2N3019,
2N3020
2N4033,
2N4031.
800mW
200OC
150mA
VCE-10V
pnp for 2n3019
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in JedecT O -39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation
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2N3019
2N3019
P008B
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Untitled
Abstract: No abstract text available
Text: m 2N3019 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3019 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce 5.0 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C T -65 °C to +200 °C stg 16.5 °C/W 0JC
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2N3019
2N3019
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2N4033
Abstract: No abstract text available
Text: 9 T ! / 2N3019 2N3020 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 -a * <$h. TEE 2N3019, 2NJ020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033» 2N4031.
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2N3019
2N3019,
2NJ020
2N4033»
2N4031.
2N3020
800mW
200OC
150mA
VCE-10V
2N4033
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2N3019-2N3020
Abstract: No abstract text available
Text: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS 2N3019 2N3020 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS D E S C R IP T IO N The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, desi gned for high-current, high-frequency amplifier ap
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2N3019
2N3020
2N3020
2N3019-2N3020
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Untitled
Abstract: No abstract text available
Text: 3QE D • 7^237 0031153 G T * 3s - is SGS-THOMSON [MOÛiiô&iOTlIRMOÛS 2N3019 2N3020 S G S-THOMSON HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTIO N The 2N3019 and 2N3020 are silicon planar epitax ial NPN transistors in Jedec TO-39 metal case, de signed for high-current, high-frequency amplifier
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2N3019
2N3020
2N3019
2N3020
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2N3700
Abstract: 2N3019 2N3019 MOTOROLA motorola 2N3019 2n3020
Text: 2N3019* 2N3020 MAXIMUM RATINGS S ym bol 2N3019 2N3020 2N3700 U n it Collector-Em itter Voltage v CEO 80 80 Vdc Collector-Base Voltage v CBO 140 140 Vdc v EBO 7.0 7.0 Vdc Rating Em itter-Base Voltage Collector C urrent — C ontinuous •c 1.0 1.0 Ade Total Device Dissipation a
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2N3019
2N3020
2N3700
2N3019*
2N3020
O-205AD)
2N3700*
O-206AA)
2N3019 MOTOROLA
motorola 2N3019
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Untitled
Abstract: No abstract text available
Text: ¡J8BBBBB88& p |M iwiHBBffi sm ssssP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. loniftBHhr. 1m1 IIr ^888o 88% #f 1 l Data S heet No. 2N 3019 $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N3019 Type 2N3019 G eom etry 4500 Polarity NPN Qual Level: J A N -J A N S REF: M IL-P R F -19500/391
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J8BBBBB88&
2N3019
MiL-PRF-19500/391
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2N3053
Abstract: 2N3019 2N3700 2N3020 2N3019 MOTOROLA motorola 2N3020 test 2N3700 2N3053 motorola 2N3053A 336 motorola
Text: 2N3019* 2N3020 M A X IM U M R A T IN G S Symbol 2N3019 2N3020 2N3700 Unit Collector-Emitter Voltage VCEO 80 80 Vdc Collector-Base Voltage VCBO 140 140 Vdc Rating Emitter-Base Voltage CA SE 79-04, STYLE 1 TO-39 TO-205AD V e BO 7.0 7.0 Vdc Collector Current — Continuous
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2N3019
2N3020
2N3700
2N3020
2N3700
2N3019*
O-205AD)
2N3053
2N3019 MOTOROLA
motorola 2N3020
test 2N3700
2N3053 motorola
2N3053A
336 motorola
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2n3700
Abstract: 2n3019 2N3019 MOTOROLA motorola 2N3019
Text: 2N3019* 2N3020 MAXIM UM RATINGS Sym bol 2N3019 2N3020 2N 3700 U n it C o lle ctor-E m itter V o ltage v CEO 80 80 Vdc C ollector-Base V o ltage V cB O 140 140 Vdc Em itter-Base V o ltage Vebo 7.0 7.0 Vdc 1.0 1.0 Ade Rating C o lle ctor C u rrent — C o ntinuous
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2N3019
2N3020
2N3019*
2N3020
O-205AD)
2N3700*
O-206AA)
2N3700
2N3019 MOTOROLA
motorola 2N3019
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