2N3440 JAN Search Results

2N3440

Abstract: 2N3439 2N3440L 2N3439L 2N3440 JAN
Contextual Info: TECHNICAL DATA 2N3439 JTX, JTXV 2N3439L JTX, JTXV 2N3440 JTX, JTXV 2N3440L JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/368 NPN SILICON LOW-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N3439 2N3440 Units 350 450 250 300 Vdc Vdc Vdc Adc W W/0C

2n3440 equivalent

Abstract: JAN 2N3439 UA 2N3439 JANTX
Contextual Info: 2N3439 thru 2N3440 Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage.

Contextual Info: 2N3440 Product Preview Low Power Transistor NPN Silicon http://onsemi.com Features • MIL−PRF−19500/368 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military COLLECTOR 3 Temperature Range Screening

2N5251

Abstract: 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421
Contextual Info: Device Type 2N2880 JAN, TX, TXV 2N3418 JAN, TX, TXV 2N3419 JAN, TX, TXV 2N3420 JAN, TX, TXV 2N3421 JAN, TX, TXV 2N3439 JAN, TX, TXV 2N3440 JAN, TX, TXV 2N3740 JAN, TX, TXV 2N3741 JAN, TX, TXV 2N3749 JAN, TX, TXV 2N3846 JAN, TX 2N3847 JAN, TX 2N3902 JAN, TX

2N3440

Abstract: 2N3439 2n3439 transistor 2N3440 JANTX 2N3439L 2N3440L
Contextual Info: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 Devices Qualified Level 2N3439 2N3439L 2N3440 2N3440L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

393A

Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868
Contextual Info: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440

2N3440

Abstract: 2N3439UA 2N3439 2N3439L 2N3440L 2N3439 JANS JAN 2N3439 UA
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 DEVICES LEVELS 2N3439 2N3439L 2N3439UA 2N3440 2N3440L

Contextual Info: 2N3440+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)250 V(BR)CBO (V)300 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition)250 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)50m

Contextual Info: 2N3440+JANS Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)250 V(BR)CBO (V)300 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition)250 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)50m

Contextual Info: 2N3440+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)250 V(BR)CBO (V)300 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition)250 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)50m

Contextual Info: 2N3440+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)250 V(BR)CBO (V)300 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition)250 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)50m

2N3440 MOTOROLA

Abstract: 2N5416 motorola 2n3439 motorola 2N3439 2N5415 MOTOROLA 2N3440 2N5415 2N6410 motorola 2n5416 transistor 2n3439
Contextual Info: M A X IM U M RATIN G S IP Symbol Rating NF»N 2N3440 2NC41B 2N5416 2N3439 Collector-Emltter Voltage Vc e o 200 300 360 260 Vdc Collector-Base Voltage Vc b O 200 350 490 300 Vdc Emitter-Base Voltage Vebo 4.0 6.0 7.0 7.0 Vdc Baas Current Ib 0.5 Ade Collector Current —

2n6190

Contextual Info: A POW ERHOUSE BIPOLAR NPN PLANAR POWER T R A N S IS T O R S VOLTS T0-205 1*0-5 111I PEAK *C AMPS min/max hFE LU bvceo O > > DEVICE TYPE _o < PACKAGE VCE (sat) max VOLTS !C @ *B A A 2N3439* 350 1.0 40-160 .02/ 10.0 0.5 .05 /. 004 2N3440* 250 1.0 40-160 .02/ 10.0

Contextual Info: BIPOLAR NPN PLAN AR POW ER T R A N SIST O R S PACKAGE T0-205 TO-5 4 J1I DEVICE TYPE b v CEO VOLTS PEAK !C AMPS hFE min/max 'C @ VCE A V VCE (sat) max VOLTS •c @ 'b A A 2N3439* 350 1.0 40-160 .02/10.0 0.5 .05/.004 2N3440* 250 1.0 40-160 .02/10.0 0.5 .05/.004

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 DEVICES LEVELS 2N3439 2N3439L

2N3439UA

Abstract: tsp 368 2N3439 2N3439L 2N3440 2N3440L
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 DEVICES LEVELS 2N3439 2N3439L

2n3440 equivalent

Abstract: 2N3439
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 RADIATION HARDENED

t039 package transistor pin mount

Abstract: 2n3440 2n3440 equivalent
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN LOW POWER SILICON TRANSISTOR

2N3440U4

Abstract: 2N3439UA 2N3439 2n3440 equivalent 2N3440 substitute 2N3439L 2N3440 2N3440L
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 19 December 2008. INCH-POUND MIL-PRF-19500/368K w/AMENDMENT 1 19 September 2008 SUPERSEDING MIL-PRF-19500/368K 20 March 2008 PERFORMANCE SPECIFICATION SHEET

rca 2n3055

Abstract: rca 40327 RCA 2N3055 transistor 2n3055 audio amplifier application note 2n3055 application note RCA 40636 transistor 40327 rca 2N3439 RCA 2N3055 transistor RCA 528
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . . f r t o 2 0 M H z . . . P y t o 1 7 5 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N]

2N3439UA

Abstract: 2N3439L 2N3440UA JANKCA2N3440 2N3439 2N3440 2N3440L JANKCA
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 October 2002. MIL-PRF-19500/368F 8 July 2002 SUPERSEDING MIL-PRF-19500/368E 24 August 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER

RCA 431 transistor

Abstract: 2N3442 RCA RCA 2N3055 transistor 2N3055 RCA 2n3773 rca RCA 40852 rca 2n3055 transistor RCA 41013 transistor BF 257 2N5416 RCA
Contextual Info: APPLICATION INFORMATION. . . Power Types [N-P-N & P-N-P] for Inverter/Switching Regulator Service Frequency Range 60 Hz to 50 kHz Peak Voltage Required Up to 0.2 A 0.2 to 1 A 10 to 60V 2N3053 2N4037 2N5321 2N5323 2N6179 2N6181 60 to 150V 2N1486 2N2102 2N4036

RCA 2N3055 transistor

Abstract: 2N3442 RCA transistor BF 257 2N3055 RCA rca 2n3771 2N3772 RCA rca 2n3055 2N4348 RCA 2n3055r rca transistor
Contextual Info: APPLICATION INFORMATION . Power Types for Electrostatic Deflection and Video Output Power Types [N-P-N & P-N-P] as Pass Transistors for Series Regulator Service Peak Output Voi tage V Pass Transistor Conditions 10 to 60 Bandwidth > 1MHz Regulator Output Current (1 ) — A

RCA 40250 transistor

Abstract: audio amplifier with rca 410 Transistor rca 40250 RCA 40622 transistor RCA H 410 2n3772 complement RCA 40250 2n3441 complement RCA 2N3055 transistor 40629 Transistor
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415