2N3467 DIE Search Results

2N3467

Abstract: 2n3762 chip type geometry 2N37
Contextual Info: Data Sheet No. 2C3762 Generic Packaged Parts: Chip Type 2C3762 Geometry 6706 Polarity PNP 2N3467, 2N3467L, 2N3468, 2N3468L, 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3764, 2N3765 30 MILS B E 30 MILS Chip type 2C3762 by Semicoa Semiconductors provides performance

KE4416

Abstract: ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375
Contextual Info: DH3467C Quad PNP Core Driver DESCRIPTION CONNECTION DIAGRAM The DH3467C consists of four 2N3467 type PNP transistors mounted in a 14-pin molded dual-in-line package. The device is primarily intended fo r core memory application requiring operating currents

2n3467

Abstract: 348F datasheet 2N3467L 2N3468 2N3468L 2N3647 2N3648 2N3467 Die
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 16 May 2005. INCH-POUND MIL-PRF-19500/348F 15 February 2005 SUPERSEDING MIL-PRF-19500/348E 25 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING,

2N3467

Abstract: 2N3467L 2N3468 2N3468L 2N3647 2N3648
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 1999 INCH-POUND MIL-PRF-19500/348E 25 July 1999 SUPERSEDING MIL-S-19500/348D 6 October 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING

2N3467

Abstract: CP603 TRANSISTOR GUIDE 2N3468
Contextual Info: Central PROCESS TM CP603 Small Signal Transistors Semiconductor Corp. PNP - Saturated Switch Transistor Chip PROCESS DETAILS PROCESS EPITAXIAL PLANAR DIE SIZE 30 x 30 MILS DIE THICKNESS 7.5 MILS BASE BONDING PAD AREA 5.0 x 4.0 MILS EMITTER BONDING PAD AREA

2N3467 Die

Abstract: 2N3467 2N3468 CP667
Contextual Info: PROCESS CP667 Central Small Signal Transistor TM Semiconductor Corp. PNP- Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area

2N3467

Abstract: transistor 735 transistor CHIP TRANSISTOR isd chipcorder application notes isd25120 2N3468 CP767
Contextual Info: PROCESS CP767 Small Signal Transistor PNP- Saturated Switch Transistor Chip PRELIMINARY PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.85 x 4.20 MILS Emitter Bonding Pad Area 7.35 x 3.75 MILS Top Side Metalization

2N6067

Abstract: 2N3244 SILICON SMALL-SIGNAL DICE 2N3467 motorola dice
Contextual Info: MOTOROLA SC - C D I O D E S / O P T O } 34 i 6367255 MOTOROLA SC DE | b3b72S5 D O B ? 1^ <D I O D E S / O P T O 34C SILICON SMALL-SIGNAL TRANSISTOR DICE continued) fi 37983 D T "" 3 7 - / / 2C3468 DIE NO. — PNP LINE SOURCE — DSL337 f4 This die provides performance similar to that of the following device types:

PIN CONFIGURATION 2N2222

Abstract: 2n2222 pin PNP 2N3904 2N2222 2N2222 pnp
Contextual Info: Quad Transistors* TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION bvc b o bvoeo bvebo <CBO VCBQ 00 (V) (VÏ <nA) MIN MIN MIN MAX *»f e 0 IC (iffA) (V) MIN VCE(SAT) <V) ® 'C (m Ai MAX c ob *T NF *0 FF COMMENTS

PNP 2N3904

Abstract: 2n2222 pin 2N2222 2N2222 pnp 2N3906
Contextual Info: Quad Transistors* '^00 TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BVq b o bvceo BVe b o 00 (Vi (V) (nA) MIN MIN MIN MAX *CBO v CBO hpE @ iC (mA) (V) MIN VCE(SAT) ® 'C (V) (mA) MAX ^ob *T NF *OFF COMMENTS

PNP 2N3904

Abstract: 2N2222 2N2222 pnp 2N3906
Contextual Info: Quad Transistors* TO-116 Case 14PinDip Tc (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BVc b o bvceo bvebo 00 00 00 (nA) 1m MIN MIN MAX 'CBO VCBO hFE vC E(SAt) • *C (mA) w MIN (V) (mA) MAX ^ob *r (PF) MAX Mm NF *OFF COMMENTS my

2N2222 pnp

Abstract: 2X PNP TRANSistors PNP 2N3904 2N2222 PIN CONFIGURATION 2N2222 2n3904 225 MP03906 2N3906 2N3906D 2N2222 dip
Contextual Info: Quad Transistors* TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BVc b O b v c e o b v e b o ICBO (V) (V) (V) <nA) MIN MIN MIN MAX @ v CBO hpE @ *c (m A ) (V) MIN VC E (5AT) (V) lC <mA) MAX c ob *r (pF) (MHz)

2N3906

Abstract: 2N2222 hfe 2N3904 NPN dip
Contextual Info: Quad Transistors TO-116 Case 14 Pin DIP TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (nA) hFE (V) @ IC VCE (SAT ) @ IC (mA) (V) MIN (mA) MAX Cob fT (pF) (MHz) NF Typ † (dB) tOFF COMMENTS

2n222a

Abstract: 2n222a datasheet 2n222a npn 2n3762 MPQ6700 2N2907 equivalent 2X PNP MPQ7053 2N2222 pnp MPQ3762
Contextual Info: Quad Transistors TO-116 Case 14 Pin DIP TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (nA) MIN MIN MIN MAX hFE (V) @ IC (mA) MIN VCE (SAT ) @ IC Cob (V) (mA) MAX fT (pF) (MHz) NF Typ † (dB)

Contextual Info: Data Sheet No. 2C 3762 SEMICONDUCTORS G e n e ric P a cka g e d P arts: Chip Type 2C3762 Geometry 6706 Polarity PNP 2N 3467, 2N 3467L, 2N 3468, 2N 3468L, 2N 3762, 2N 3762L, 2N 3763, 2N 3763L, 2N 3764, 2N 3765 1 Chip type 2C3762 by Semicoa Semi­ conductors provides performance

SP3467QDB

Contextual Info: RAYTHEON/ SEMICONDUCTOR T4 RAYTHEO N. TSTYBbO OGOS SMH 7 SMALL SIGNAL TRANSISTORS p r o d u c t specificatio n s 7597360 d ÊTJ S E M IC O N D U C T O R 94D 05543 High Current, High Speed Switches D i-si-cs' Popular Types Description The GK is a platinum doped transistor.

Contextual Info: MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage v CEO Collector-Base Voltage v CBO Emitter-Base Voltage v EBO Collector Current — Continuous 'c Total Device Dissipation a Ta = 25X11) Derate above 25°C Pd Total Device Dissipation (w Tc - 25°C

Contextual Info: M AXIM U M RATINGS Rating Symbol Valu* Unit V C EO - 40 Vdc C o lle cto r-B a se V olta g e VCBO - 40 V dc Em itte r-B a se V olta g e Ve b o - 5.0 Vdc 'c - 1.5 Ade C o lle c to r-E m itte r V olta g e C o lle c to r C urre n t — C o n tin u o u s T o tal D evice D issip a tio n

ic Lb 598 d

Abstract: MPQ3467 D 1879 transistor 2N3467 transistor N 343 AD Lb 598 d rfl3
Contextual Info: MPQ3467 SILICON QUAD D UAL IN-LINE PNP SILICO N AN N ULAR MEMORY D R IV E R TRA N SISTO R S QUAD DUAL-IN -LINE PNP SILICO N M EM ORY D R IV E R TR A N SISTO R S . . . designed for medium-current, high-speed switching, ferrite core and plated w ire memory driver, and MOS translator applications.

2N3810 LCC

Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
Contextual Info: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

MCA0616/1

Abstract: T-120-01B Skynet Electronic
Contextual Info: Space Products Semelab products and processes for space applications Contents 1. Introduction 4 2. Programmes Supported 5 3. Innovations 6 3.1 Improving the Space Weather Forecast with the LCC1- 4 6 3.2 SoLaRfets – Radiation Tolerant MosFETS 7 3.3 Si3N4 via technology

2N6309

Abstract: pn junction DIODE 1N4001 Graph of Length vs Thermal resistance of Heat sink Mullard technical communications 2N3053 characteristic curves 2N5983 equivalent AN569 pin details of 2N5190 2N5304 2N5974
Contextual Info: AN569/D Transient Thermal Resistance General Data and Its Use Prepared by: Bill Roehr and Bryce Shiner ON Semiconductor Applications Engineering http://onsemi.com APPLICATION NOTE Introduction For a certain amount of dc power dissipated in a semiconductor, the junction temperature reaches a value

MOTOROLA 2N5179

Abstract: motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866
Contextual Info: Central Semiconductor - Cross Reference Competitor Discontinued Part Replacements EOL Part # Manufacturer Name Central Semi Part # A12FR10 International Rectifier CR20-010R A12FR100 International Rectifier CR20-100R A12FR120 International Rectifier CR20-120R

TO-225AA

Abstract: silicone 813 dow corning RCA THYRISTOR
Contextual Info: SECTION 8 RELIABILITY AND QUALITY Edited and Updated stable. However, for pulses in the microsecond and millisecond region, the use of steady–state values will not yield true power capability because the thermal response of the system has not been taken into account.